摘要:
A method for updating data in a non-volatile memory is provided. It is assumed that generally, the data to be written are sequential. After a pen drive receives a packet comprising to-be-updated data, it is determined whether the write-in address of the packet is in the same block with the last updated data to decide whether or not to copy back the un-updated data. Accordingly, unnecessary copy-back operations can be saved and the data updating efficiency can be improved.
摘要:
A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.
摘要:
An apparatus and a method for sensing temperature are provided. The apparatus includes a first oscillation circuit, a pulse width generator, and a comparison circuit. The first oscillation circuit is for generating a first signal having a first frequency which is related to a to-be-sensed temperature. The pulse width generator is for generating a pulse width signal, the pulse width signal having a pulse width related to the to-be-sensed temperature. The comparison circuit is for generating an output signal indicative of the value of the to-be-sensed temperature according to the first signal and the pulse width signal.
摘要:
A current control circuit for controlling a bias current of a class AB operational amplifier includes: a low current source, for generating a low bias current; a high current source, for generating a high bias current, which is greater than the low bias current; and a comparing and selecting unit, coupled to an output terminal of the class AB operational amplifier, for selecting one of the low bias current and the high bias current to output as the bias current according to an output voltage of the class AB OP.
摘要:
A random clock generator for a spread spectrum modulating device includes a random number generator for generating a plurality of random number signals according to a first square wave signal and a control signal, a reference wave generator coupled to the random number generator for generating a triangular signal and a second square wave signal according to the plurality of random number signals, and a trigger signal generator coupled to the random number generator and the reference wave generator, for generating the first square wave signal according to the second square wave signal.
摘要:
A switching amplifier includes an input end for receiving an input signal, a reference signal reception end for receiving a reference signal, a feedback end for receiving a feedback signal, an output end for outputting an output signal, an integration circuit for performing integration operation on the input signal according to the output signal and the feedback signal, so as to generate an integration result, a comparison circuit coupled to the integration circuit, the reference signal end, and the output end, for comparing the integration result and the reference signal, so as to generate the output signal for the output end, and a feedback circuit coupled between an output end of the integration circuit and the feedback end, for generating the feedback signal for the feedback end to clamp the integration result to a predetermined value when the integration result reaches the predetermined value.
摘要:
An amplifier circuit includes a feedback loop; a former stage amplifier unit coupled to an input node of the amplifier circuit and the feedback loop for amplifying the difference between an input signal received from the input node and an output signal which comes back through the feedback loop, and outputting a first output signal; a compensating amplifier unit coupled to the former stage amplifier unit for amplifying the first output signal and outputting a second output signal; and an output stage amplifier unit coupled to the compensating amplifier unit and the feedback loop for outputting a third output signal according to the second output signal.
摘要:
The present invention discloses a dynamic power control method utilized in an amplifier. The dynamic power control method includes detecting an absolute difference between a positive supply voltage of the amplifier and an output voltage of the amplifier, to acquire a positive voltage difference; detecting an absolute difference between a negative supply voltage of the amplifier and the output voltage of the amplifier, to acquire a negative voltage difference; and adjusting the positive supply voltage and the negative supply voltage according to the positive voltage difference, the negative voltage difference and a threshold.
摘要:
An innovative dual-port subthreshold static random access memory (SRAM) cell for sub-threshold voltage operation is disclosed. During write mode, the dual-port subthreshold SRAM cell would cut off the positive feedback loop of the inverters and utilize the reverse short-channel effect to enhance write capability. The single-ended read/write port structure further reduces power consumption of the lengthy bit line. Therefore, the dual-port subthreshold SRAM cell is a suitable for long operation in a first-in first-out memory system. Although the lower voltage reduces the stability of the memory cell, the dual-port subthreshold SRAM cell of the present invention can still stably operate.
摘要:
A charge pump is disclosed for amplifying an input voltage received at an input end and outputting the amplified voltage at an output end as an output voltage. The charge pump includes a plurality of source/drain coupling transistors for serving as charging capacitors, and a plurality of cascode-connected transistors being symmetrically connected to between the input end and the output end. The charge pump further includes a plurality of diode-connected transistors to protect the source/drain coupling transistors against breakdown during the course of charge transfer and to speed up the charge transfer.