公开(公告)号：US6048783A

公开(公告)日：2000-04-11

申请号：US282976

申请日：1999-03-31

申请人： Hye-Young Kim ,  Kyo-Hoo Moon

发明人： Hye-Young Kim ,  Kyo-Hoo Moon

IPC分类号： H01L21/205 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/3205

CPC分类号： H01L29/42384 ,  H01L21/28008 ,  H01L21/32135

摘要： A double-layered electrode layer is formed on a substrate according to a process in which lower and upper electrode layer forming materials are deposited on a substrate in this order, then a lower photoresist pattern is formed on the upper electrode layer forming material. Next, the lower and upper electrode layer forming materials are isotropically etched to obtain lower and upper electrode layers, after which the upper electrode layer is anisotropically etched such that a width of the upper electrode layer becomes less than that of the lower electrode layer.

摘要翻译： 根据以下工序，在基板上形成双层电极层，其中下电极层形成材料和上电极层形成材料依次沉积在基板上，然后在上电极层形成材料上形成下光致抗蚀剂图案。 接下来，对上下电极层形成材料进行各向同性蚀刻以获得下电极层和上电极层，之后对上电极层进行各向异性蚀刻，使得上电极层的宽度变得小于下电极层的宽度。

公开(公告)号：US20130311709A1

公开(公告)日：2013-11-21

申请号：US13656446

申请日：2012-10-19

申请人： Jung-Been Im ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Shea-Yun Lee

发明人： Jung-Been Im ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Shea-Yun Lee

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7211

摘要： Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

摘要翻译： 集成电路系统包括非易失性存储器件（例如，快闪EEPROM器件）和存储器处理电路。 存储器处理电路电耦合到非易失性存储器件。 存储器处理电路被配置为重新分配非易失性存储器件内的可寻址空间。 响应于由存储器处理电路接收的容量调整命令，通过增加非易失性存储器件中被保留为冗余存储器地址的物理地址的数量来执行该重新分配。

公开(公告)号：US20080098193A1

公开(公告)日：2008-04-24

申请号：US11565811

申请日：2006-12-01

申请人： Jung-Been Im ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Shea-Yun Lee

发明人： Jung-Been Im ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Shea-Yun Lee

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/1036 ,  G06F2212/7211

摘要： Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

摘要翻译： 集成电路系统包括非易失性存储器件（例如，快闪EEPROM器件）和存储器处理电路。 存储器处理电路电耦合到非易失性存储器件。 存储器处理电路被配置为重新分配非易失性存储器件内的可寻址空间。 响应于由存储器处理电路接收的容量调整命令，通过增加非易失性存储器件中被保留为冗余存储器地址的物理地址的数量来执行该重新分配。

公开(公告)号：US08745312B2

公开(公告)日：2014-06-03

申请号：US12071498

申请日：2008-02-21

申请人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

发明人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

IPC分类号： G06F12/06

CPC分类号： G06F12/0246 ,  G06F2212/7201

摘要： A non-volatile memory may include a plurality of map blocks for storing a plurality of map units, the map units representing mapping information between physical addresses and logical addresses. A storage device may include such a non-volatile memory. A method of mapping such a non-volatile memory may include writing historical information regarding locations of valid map units among the map units included in map blocks previously allocated among the map blocks when a new map block among the map blocks is allocated, the valid map units representing valid mapping information, and constructing a map table including all of the valid mapping information based on the historical information and a result of searching a map block recently allocated among the map blocks.

摘要翻译： 非易失性存储器可以包括用于存储多个地图单元的多个地图块，地图单元表示物理地址和逻辑地址之间的映射信息。 存储设备可以包括这样的非易失性存储器。 映射这种非易失性存储器的方法可以包括：当分配地图块中的新映射块之前，在地图块之前分配的映射块中包括的映射单元中的有效映射单元的位置的写入历史信息，有效映射 表示有效映射信息的单元，以及基于历史信息构建包括所有有效映射信息的映射表，以及搜索最近在映射块中分配的映射块的结果。

公开(公告)号：US20080209161A1

公开(公告)日：2008-08-28

申请号：US12071498

申请日：2008-02-21

申请人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

发明人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

IPC分类号： G06F12/06

CPC分类号： G06F12/0246 ,  G06F2212/7201

摘要： A non-volatile memory may include a plurality of map blocks for storing a plurality of map units, the map units representing mapping information between physical addresses and logical addresses. A storage device may include such a non-volatile memory. A method of mapping such a non-volatile memory may include writing historical information regarding locations of valid map units among the map units included in map blocks previously allocated among the map blocks when a new map block among the map blocks is allocated, the valid map units representing valid mapping information, and constructing a map table including all of the valid mapping information based on the historical information and a result of searching a map block recently allocated among the map blocks.

摘要翻译： 非易失性存储器可以包括用于存储多个地图单元的多个地图块，地图单元表示物理地址和逻辑地址之间的映射信息。 存储设备可以包括这样的非易失性存储器。 映射这种非易失性存储器的方法可以包括：当分配地图块中的新映射块时，在地图块之前分配的映射块中包括的映射单元中的有效映射单元的位置的写入历史信息，有效映射 表示有效映射信息的单元，以及基于历史信息构建包括所有有效映射信息的映射表，以及搜索最近在映射块中分配的映射块的结果。

公开(公告)号：US07154578B2

公开(公告)日：2006-12-26

申请号：US10747943

申请日：2003-12-31

申请人： Hye-Young Kim

发明人： Hye-Young Kim

IPC分类号： G02F1/1339 ,  G02F1/1333

CPC分类号： G02F1/1339

摘要： A liquid crystal display device includes first and second substrates facing and spaced apart from each other; a first inorganic insulating layer over an inner surface of the first substrate, and a seal pattern between the first inorganic insulating layer and an inner surface of the second substrate, the seal pattern contacting the first inorganic insulating layer. The device causes the seal pattern adhesive to have reduced chemical reactivity to thereby reduce the number of defects in the liquid crystal display.

公开(公告)号：US07836244B2

公开(公告)日：2010-11-16

申请号：US11933564

申请日：2007-11-01

申请人： Hye-Young Kim ,  Jung-Been Im

发明人： Hye-Young Kim ,  Jung-Been Im

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F12/0246

摘要： A method of providing block state information in a semiconductor memory device including a flash memory comprises storing block state information on at least one bad block of the flash memory and a plurality of reserved blocks which replace the at least one bad block, and providing the stored block state information to a user in response to a command provided by the user.

摘要翻译： 一种在包括闪速存储器的半导体存储器件中提供块状态信息的方法包括将块状态信息存储在闪速存储器的至少一个坏块上，以及多个保留块，其替换该至少一个坏块，并提供所存储的 响应于由用户提供的命令向用户块状态信息。

公开(公告)号：US07529880B2

公开(公告)日：2009-05-05

申请号：US11319280

申请日：2005-12-29

申请人： Hyun-Mo Chung ,  Hye-Young Kim ,  Chan-Ik Park

发明人： Hyun-Mo Chung ,  Hye-Young Kim ,  Chan-Ik Park

IPC分类号： G06F12/00

CPC分类号： G06F12/0246

摘要： A run level address mapping table and related method provides for storing address mapping data, which maps logical addresses to physical addresses in a flash memory using a flash translation layer. A first value is stored in the address mapping table, indicating an initial location for a run within a memory block, the run having at least two consecutive physical addresses. A second value is stored in the address mapping table, indicating a total size for the run.

摘要翻译： 运行级地址映射表和相关方法提供存储地址映射数据，其使用闪存转换层将逻辑地址映射到闪速存储器中的物理地址。 第一个值存储在地址映射表中，指示存储器块内的运行的初始位置，该运行具有至少两个连续的物理地址。 第二个值存储在地址映射表中，指示运行的总大小。

公开(公告)号：US07417703B2

公开(公告)日：2008-08-26

申请号：US11503192

申请日：2006-08-14

申请人： Hye-Young Kim

发明人： Hye-Young Kim

IPC分类号： G02F1/1339 ,  G02F1/1333

CPC分类号： G02F1/1339

摘要： A liquid crystal display device includes first and second substrates facing and spaced apart from each other; a first inorganic insulating layer over an inner surface of the first substrate, and a seal pattern between the first inorganic insulating layer and an inner surface of the second substrate, the seal pattern contacting the first inorganic insulating layer. The device causes the seal pattern adhesive to have reduced chemical reactivity to thereby reduce the number of defects in the liquid crystal display.

摘要翻译： 液晶显示装置包括彼此面对并间隔开的第一和第二基板; 在第一基板的内表面上的第一无机绝缘层，以及第一无机绝缘层和第二基板的内表面之间的密封图案，密封图案与第一无机绝缘层接触。 该装置使得密封图案粘合剂具有降低的化学反应性，从而减少液晶显示器中的缺陷数量。

公开(公告)号：US20080098192A1

公开(公告)日：2008-04-24

申请号：US11565009

申请日：2006-11-30

申请人： Jung-Been Im ,  Hye-Young Kim

发明人： Jung-Been Im ,  Hye-Young Kim

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G06F2212/7205

摘要： Methods of operating a non-volatile memory device that includes a first data block that stores first data and a first log block that stores an updated version of at least some of the first data is provided in which valid portions of the first data in the first data block are copied to a free block that has no data to generate a second data block. The updated version of at least some of the first data from the first log block is copied to the second data block. The first log block is designated as a reusable log block without erasing the data therefrom in response to at least one predetermined condition being satisfied.

摘要翻译： 提供了操作包括存储第一数据的第一数据块和存储第一数据中的至少一些的更新版本的第一日志块的非易失性存储器件的方法，其中第一数据的第一数据的有效部分 数据块被复制到没有数据生成第二数据块的空闲块。 来自第一日志块的至少一些第一数据的更新版本被复制到第二数据块。 响应于满足至少一个预定条件，将第一日志块指定为可重用日志块而不擦除其数据。