摘要:
Disclosed is an optical fiber suitable for WDM system, particularly whose zero-dispersion wavelength is positioned in a short wavelength band less than 1,300 mm. In the optical fiber, dispersion has a positive value, not zero, at 1,310 nm, and a dispersion slope is positive at 1,550 nm with dispersion of 25 ps/nm-km or less. In addition, an effective sectional area is 65 μm2 or less at 1,310 nm, and 80 μm2 or less at 1,550 nm.Thus, though a transmission signal is Raman-amplified at a wavelength band of 1,300˜1,700 nm, transmission characteristics are not deteriorated due to crosstalk between pump signals. In addition, since the optical fiber has smaller effective sectional area than a general single-mode optical fiber with having substantially the same dispersion feature, it gives better Raman gain efficiency than a general single-mode optical fiber.
摘要:
Disclosed is an optical fiber suitable for an optical transmission line used in WDM system, particularly a single-mode optical fiber whose zero-dispersion wavelength is positioned in a short wavelength band (less than 1,370 mm) so as to enable high-speed mass-storage signal transmission over S-C-L bands (1,460˜1,625 nm) and whose dispersion value and effective sectional area are optimized. In the optical fiber, a dispersion value is at least 9 ps/nm-km at 1,460 nm, an effective sectional area is 45-65 μm2 at 1,460 rim, a zero-dispersion wavelength exists at 1,370 nm or less, and a dispersion slope is positive. In addition, RDS (Relative Dispersion Slope) is 0.0032˜0.0038 nm−1 at 1,550 nm. Thus, the optical fiber enables to repress non-linearity and signal distortion to the maximum during 320 km repeaterless transmission with a transmission rate of 10 Gb/s or more over S-C-L bands, a channel spacing of 50 GHz or less, 16 channels, and a signal power of 0 dBm/ch or 2 dBm/ch.
摘要:
Disclosed is an optical fiber suitable for WDM system, particularly whose zero-dispersion wavelength is positioned in a short wavelength band less than 1,300 mm. In the optical fiber, dispersion has a positive value, not zero, at 1,310 nm, and a dispersion slope is positive at 1,550 rim with dispersion of 25 ps/nm-km or less. In addition, an effective sectional area is 65 μm2 or less at 1,310 rim, and 80 μm2 or less at 1,550 nm. Thus, though a transmission signal is Raman-amplified at a wavelength band of 1,300 to 1,700 nm, transmission characteristics are not deteriorated due to crosstalk between pump signals. In addition, since the optical fiber has smaller effective sectional area than a general single-mode optical fiber with having substantially the same dispersion feature, it gives better Raman gain efficiency than a general single-mode optical fiber.
摘要:
Disclosed is an optical fiber suitable for an optical transmission line used in WDM system, particularly a single-mode optical fiber whose zero-dispersion wavelength is positioned in a short wavelength band (less than 1370 mm) so as to enable high-speed mass-storage signal transmission over S-C-L band (1460˜1625 nm) and whose dispersion value and effective sectional area are optimized. In the optical fiber, a dispersion value is at least 9 ps/nm-km at 1460 nm, an effective sectional area is 45˜65 μm2 at 1460 nm, a zero-dispersion wavelength exists at 1370 nm or less, and a dispersion slope is positive. In addition, RDS (Relative Dispersion Slope) is 0.0032˜0.0038 nm−1 at 1550 nm. Thus, the optical fiber enables to repress non-linearity and signal distortion to the maximum during 320 km repeaterless transmission with a transmission rate of 10 Gb/s or more over S-C-L band, a channel spacing of 50 GHz or less, 16 channels, and a signal power of 0 dBm/ch or 2 dBm/ch.
摘要:
Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要:
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要:
A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups “—N═C═O”, “—N═C═S”, “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.
摘要翻译:一种方法包括使用采用处理气体的沉积工艺在衬底上形成相变材料层。 工艺气体包括锗源气体,锗源气体包括至少一个原子团“-N = C = O”,“-N = C = S”,“-N =C≡Se”,“ -N =C≡Te“,”-N =C≡Po“和”-C≡N“。
摘要:
A memory device using a phase change material and a method for forming the same are disclosed. One embodiment of a memory device includes a first insulating layer provided on a substrate and defining an opening; a first conductor including a first portion and a second portion, the first portion provided on a bottom of the opening, the second portion being continuously provided along a sidewall of the opening; a variable resistor connected to the second portion of the first conductor and provided along the sidewall of the opening; and a second conductor provided on the variable resistor.
摘要:
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要:
A method of restoring setting values by managing a passive optical network (PON) network topology table in a device accommodating a plurality of Ethernet passive optical network (EPON) ports includes the steps of: booting the device accommodating a plurality of EPON ports; a controller for restoring a previously set configuration and PON network topology table from a backup memory of the device; and performing a module initialization operation for all optical line terminal (OLT) modules installed in the device. The PON network topology table is labeled by 4-byte indexes according to a simple network management protocol (SNMP).