公开(公告)号：US06819617B2

公开(公告)日：2004-11-16

申请号：US10452176

申请日：2003-06-02

申请人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

发明人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

IPC分类号： G11C700

CPC分类号： G11C11/40622 ,  G11C7/1018 ,  G11C11/406 ,  G11C11/4087

摘要： Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, ⅛, or {fraction (1/16)}) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.

摘要翻译： 执行PASR（部分阵列自刷新）操作的系统和方法，其中对一个或多个部分（例如，1 / 2,1 / 8或{分数（1/16））的一部分执行用于对存储数据进行再充电的刷新操作 在一个方面，通过（1）在自刷新操作期间通过行地址计数器控制行地址的生成来执行PASR操作，以及（2）控制自身的自身 - 刷新周期产生电路，用于调整其自刷新周期输出，在PASR操作期间以减少电流消耗的方式调整自刷新周期，另一方面，通过控制一个PASR操作来执行PASR操作 或更多行对应于自刷新操作期间的部分单元阵列的行地址，从而通过阻止存储器组的未使用块的激活来实现自刷新电流消耗的减少。

公开(公告)号：US06992943B2

公开(公告)日：2006-01-31

申请号：US10959804

申请日：2004-10-06

申请人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

发明人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

IPC分类号： G11C7/00

CPC分类号： G11C11/40622 ,  G11C7/1018 ,  G11C11/406 ,  G11C11/4087

摘要： Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, ⅛, or 1/16) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.

公开(公告)号：US20050041506A1

公开(公告)日：2005-02-24

申请号：US10959804

申请日：2004-10-06

申请人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

发明人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

IPC分类号： G11C11/407 ,  G11C7/10 ,  G11C11/403 ,  G11C11/406 ,  G11C11/408 ,  G11C7/00

CPC分类号： G11C11/40622 ,  G11C7/1018 ,  G11C11/406 ,  G11C11/4087

摘要： Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, ⅛, or {fraction (1/16)}) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.

摘要翻译： 执行PASR（部分阵列自刷新）操作的系统和方法，其中对一个或多个部分（例如，1 / 2,1 / 8或{分数（1/16））的一部分执行用于对存储数据进行再充电的刷新操作 在一个方面，通过（1）在自刷新操作期间通过行地址计数器控制行地址的生成来执行PASR操作，以及（2）控制自身的自身 - 刷新周期产生电路，用于调整其自刷新周期输出，在PASR操作期间以减少电流消耗的方式调整自刷新周期，另一方面，通过控制一个PASR操作来执行PASR操作 或更多行对应于自刷新操作期间的部分单元阵列的行地址，从而通过阻止存储器组的未使用块的激活来实现自刷新电流消耗的减少。

公开(公告)号：US06590822B2

公开(公告)日：2003-07-08

申请号：US09925812

申请日：2001-08-09

申请人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

发明人： Hyong-Ryol Hwang ,  Jong-Hyun Choi ,  Hyun-Soon Jang

IPC分类号： G11C700

CPC分类号： G11C11/40622 ,  G11C7/1018 ,  G11C11/406 ,  G11C11/4087

摘要： Systems and methods for performing a PASR (partial array self-refresh) operation wherein a refresh operation for recharging stored data is performed on a portion (e.g., ½ ¼, ⅛, or {fraction (1/16)}) of one or more selected memory banks comprising a cell array in a semiconductor memory device. In one aspect, a PASR operation is performed by (1) controlling the generation of row addresses by a row address counter during a self-refresh operation and (2) controlling a self-refresh cycle generating circuit to adjust the self-refresh cycle output therefrom. The self-refresh cycle is adjusted in a manner that provides a reduction in the current dissipation during the PASR operation. In another aspect, a PASR operation is performed by controlling one or more row addresses corresponding to a partial cell array during a self-refresh operation, whereby a reduction in a self-refresh current dissipation is achieved by blocking the activation of a non-used block of a memory bank.

摘要翻译： 执行PASR（部分阵列自刷新）操作的系统和方法，其中对一个或多个所选择的存储体的一部分（例如，1/2，1/8或1/16）执行用于对存储的数据进行再充电的刷新操作 包括半导体存储器件中的单元阵列。 一方面，通过以下操作来执行PASR操作：（1）在自刷新操作期间通过行地址计数器控制行地址的生成，以及（2）控制自刷新周期发生电路以调整自刷新周期输出 由此。 调整自刷新周期，从而在PASR操作期间降低电流消耗。 在另一方面，通过在自刷新操作期间控制对应于部分单元阵列的一个或多个行地址来执行PASR操作，由此通过阻止未使用的激活来实现自刷新电流消耗的减少 一块记忆库。

公开(公告)号：US08963130B2

公开(公告)日：2015-02-24

申请号：US13108457

申请日：2011-05-16

申请人： Jong-Hyun Choi

发明人： Jong-Hyun Choi

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01J1/62 ,  H01J63/04 ,  H01L27/12 ,  H01L51/52

CPC分类号： H01L27/124 ,  H01L51/5215 ,  H01L51/5265 ,  H01L2227/323

摘要： Disclosed are a transparent electrode including a first light-transmission layer, a metal layer, and a second light-transmission layer sequentially formed, an organic light emitting device including the transparent electrode, and a method of manufacturing the same. The second light-transmission layer includes a conductive oxide and a metal catalyst.

摘要翻译： 公开了包括依次形成的第一透光层，金属层和第二透光层的透明电极，包括透明电极的有机发光器件及其制造方法。 第二透光层包括导电氧化物和金属催化剂。

公开(公告)号：US08575609B2

公开(公告)日：2013-11-05

申请号：US13200826

申请日：2011-10-03

申请人： Jong-Hyun Choi

发明人： Jong-Hyun Choi

IPC分类号： H01L29/04

CPC分类号： H01L27/3265 ,  H01L27/3258

摘要： An organic light emitting display apparatus includes a substrate, a thin film transistor formed on the substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode, a first gate insulation layer arranged between the gate electrode and the active layer and including an opening portion, a first electrode arranged between the substrate and the first gate insulation layer to overlap the opening portion, an intermediate layer formed on the first electrode and including an organic light emitting layer, a second electrode formed on the intermediate layer, and a capacitor including a first capacitor electrode that is arranged between the substrate and the first gate insulation layer and a second capacitor electrode that is arranged on an upper surface of the first gate insulation layer.

摘要翻译： 一种有机发光显示装置，包括：基板，形成在基板上的薄膜晶体管，具有有源层，栅电极，源电极和漏电极，配置在栅电极和活性层之间的第一栅极绝缘层 并且包括开口部分，布置在所述基板和所述第一栅极绝缘层之间以与所述开口部分重叠的第一电极，形成在所述第一电极上并包括有机发光层的中间层，形成在所述中间层上的第二电极 以及电容器，其包括布置在所述基板和所述第一栅极绝缘层之间的第一电容器电极和布置在所述第一栅极绝缘层的上表面上的第二电容器电极。

公开(公告)号：US20130288413A1

公开(公告)日：2013-10-31

申请号：US13928120

申请日：2013-06-26

申请人： Jong-Hyun Choi ,  Jong-Yun Kim ,  Jin-Goo Kang ,  Dae-Hyun Noh

发明人： Jong-Hyun Choi ,  Jong-Yun Kim ,  Jin-Goo Kang ,  Dae-Hyun Noh

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  H01L27/3246

摘要： An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.

摘要翻译： 一种有机发光显示装置，包括：基板; 在所述基板上形成的至少一个薄膜晶体管（TFT）; 覆盖TFT的平坦化层; 像素电极，其形成在平坦化层上并连接到TFT; 围绕像素电极的边缘的保护层; 具有比保护层的顶表面突出的突出（OH）结构的像素限定层（PDL）覆盖保护层和像素电极的边缘，并且暴露由像素电极包围的像素电极的一部分 保护层; 面对像素电极的对置电极; 以及中间层，其介于像素电极和对电极之间，并且包括发光层和至少一个有机层，其中中间层的厚度大于保护层的厚度。

公开(公告)号：US20130147773A1

公开(公告)日：2013-06-13

申请号：US13477204

申请日：2012-05-22

申请人： Guang-Hai JIN ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Jong-Hyun Choi

发明人： Guang-Hai JIN ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Jong-Hyun Choi

IPC分类号： G06F3/038

CPC分类号： G06F3/038 ,  G09G3/30 ,  G09G3/3266 ,  G09G2330/08

摘要： A scan driving circuit includes a shift register configured to sequentially output a first scan signal to scan lines through respective first output lines during a first section of a frame period, a simultaneous switching block configured to simultaneously output a second scan signal to the scan lines through respective second output lines during a second section of the frame period, the first and second periods of the frame period being different from each other, a switching device electrically connected to the second output line, and a repair line across the first output line and the second output line.

摘要翻译： 扫描驱动电路包括：移位寄存器，被配置为在帧周期的第一部分期间顺序地输出第一扫描信号以扫描线通过相应的第一输出线;同时切换块，被配置为同时向扫描线通过第二扫描信号 在帧周期的第二部分期间相应的第二输出线，帧周期的第一和第二周期彼此不同，电连接到第二输出线的开关装置和穿过第一输出线的修复线和 第二输出线。

公开(公告)号：US08455876B2

公开(公告)日：2013-06-04

申请号：US12805702

申请日：2010-08-16

申请人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

发明人： Jong-Hyun Choi ,  June-Woo Lee ,  Kwang-Hae Kim ,  Kyoung-Bo Kim

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/3262

摘要： An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.

摘要翻译： 一种OLED显示器，包括：基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层，并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极，并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层，或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。

公开(公告)号：US20130056710A1

公开(公告)日：2013-03-07

申请号：US13426733

申请日：2012-03-22

申请人： Jae-Hwan Oh ,  Young-Jin Chang ,  Seong-Hyun Jin ,  Se-Hun Park ,  June-Woo Lee ,  Kwang-Hae Kim ,  Jong-Hyun Choi ,  Kwan-Kyu Lee ,  Won-Kyu Lee ,  Jae-Beom Choi

发明人： Jae-Hwan Oh ,  Young-Jin Chang ,  Seong-Hyun Jin ,  Se-Hun Park ,  June-Woo Lee ,  Kwang-Hae Kim ,  Jong-Hyun Choi ,  Kwan-Kyu Lee ,  Won-Kyu Lee ,  Jae-Beom Choi

IPC分类号： H01L27/32 ,  H01L51/56

CPC分类号： H01L27/1255 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5265 ,  H01L51/5268 ,  H01L2227/323

摘要： An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

摘要翻译： 一种有机发光显示装置，包括第一绝缘层，第一绝缘层上的第二绝缘层，包括凹凸部，第二绝缘层上的第三绝缘层，第三绝缘层上的像素电极，对置电极 面对像素电极，以及像素电极和对置电极之间的有机发光层; 薄膜晶体管，包括有源层，栅电极和连接到有源层的源极/漏极，所述第一绝缘层位于所述有源层和所述栅电极之间，所述第二绝缘层位于所述栅电极与所述栅电极之间， 源极/漏极; 以及电容器，其包括与栅电极相同的层上的下电极，与第三绝缘层相同的材料的电介质层，以及与像素电极同层的上电极。