摘要:
A recording medium, and a method and apparatus for recording defect management information on the recording medium are disclosed. The method for recording defect management information of a recording medium includes recording a defect entry on the recording medium, wherein the defect entry includes a first field that can identify a defect entry type, a second field recording position information of a defect area within a user data area, and a third field recording position information of a replacement area within a spare area, and recording position information corresponding to the second field and/or the third field in accordance with the defect entry type decided by the first field, wherein, in case of a defect entry type having no corresponding position information, the corresponding field is set to zero (0).
摘要:
The present invention provides a chiral inorganic-organic composite porous material in which cationic chiral organic molecules are present as charge-balancing cations in a porous material containing charge-balancing cations, as well as a method for preparing the same by an ion exchange process. The chiral inorganic-organic composite porous material according to the present invention is excellent in stability, selectivity and durability, and thus, will be useful as a chiral-selective catalyst or a material of separating an isomeric mixture.
摘要:
The present invention provides a chiral inorganic-organic composite porous material in which cationic chiral organic molecules are present as charge-balancing cations in a porous material containing charge-balancing cations, as well as a method for preparing the same by an ion exchange process. The chiral inorganic-organic composite porous material according to the present invention is excellent in stability, selectivity and durability, and thus, will be useful as a chiral-selective catalyst or a material of separating an isomeric mixture.
摘要:
A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer.