公开(公告)号：US09014259B2

公开(公告)日：2015-04-21

申请号：US13331713

申请日：2011-12-20

Applicant: Donggyu Sim ,  Doo Hyun Kim ,  Joon Ho Song ,  Shi Hwa Lee ,  Do Hyung Kim ,  Hyun Ho Cho ,  Jin Sub Lee ,  Jeong Han Seo

Inventor： Donggyu Sim ,  Doo Hyun Kim ,  Joon Ho Song ,  Shi Hwa Lee ,  Do Hyung Kim ,  Hyun Ho Cho ,  Jin Sub Lee ,  Jeong Han Seo

IPC: H04N7/26 ,  H04N19/42 ,  H04N19/44 ,  G06F9/30 ,  H04N19/70

CPC classification number: H04N19/42 ,  G06F9/30 ,  H04N19/44 ,  H04N19/70

Abstract: An apparatus and method sequentially parses bitstreams based on a removal of an Emulation Prevention Byte (EPB). The apparatus and method may detect an EPB pattern from among sequentially input bitstreams, may store the bitstreams, may store a processed bitstream where the EPB pattern is removed, among the bitstreams, and may select an output of a register buffer based on an input of a buffer selection flag.

Abstract translation: 一种装置和方法基于去除仿真预防字节（EPB）来顺序解析比特流。 所述装置和方法可以从顺序输入的比特流中检测EPB模式，可以存储比特流，可以在比特流中存储去除了EPB模式的经处理的比特流，并且可以基于输入缓冲区的输入来选择寄存器缓冲器的输出 缓冲区选择标志。

公开(公告)号：US20120155551A1

公开(公告)日：2012-06-21

申请号：US13331713

申请日：2011-12-20

Applicant: Donggyu SIM ,  Doo Hyun KIM ,  Joon Ho SONG ,  Shi Hwa LEE ,  Do Hyung KIM ,  Hyun Ho CHO ,  Jin Sub LEE ,  Jeong Han SEO

Inventor： Donggyu SIM ,  Doo Hyun KIM ,  Joon Ho SONG ,  Shi Hwa LEE ,  Do Hyung KIM ,  Hyun Ho CHO ,  Jin Sub LEE ,  Jeong Han SEO

IPC: H04N7/26

CPC classification number: H04N19/42 ,  G06F9/30 ,  H04N19/44 ,  H04N19/70

Abstract: An apparatus and method sequentially parses bitstreams based on a removal of an Emulation Prevention Byte (EPB). The apparatus and method may detect an EPB pattern from among sequentially input bitstreams, may store the bitstreams, may store a processed bitstream where the EPB pattern is removed, among the bitstreams, and may select an output of a register buffer based on an input of a buffer selection flag.

Abstract translation: 一种装置和方法基于去除仿真预防字节（EPB）来顺序解析比特流。 所述装置和方法可以从顺序输入的比特流中检测EPB模式，可以存储比特流，可以在比特流中存储去除了EPB模式的经处理的比特流，并且可以基于输入缓冲区的输入来选择寄存器缓冲器的输出 缓冲区选择标志。

公开(公告)号：US20130056747A1

公开(公告)日：2013-03-07

申请号：US13595480

申请日：2012-08-27

Applicant: Jin Sub LEE ,  Jung Sup Kim ,  Seong Suk Lee ,  Tae Young Park ,  Cheol Soo Sone

Inventor： Jin Sub LEE ,  Jung Sup Kim ,  Seong Suk Lee ,  Tae Young Park ,  Cheol Soo Sone

IPC: H01L33/02

CPC classification number: H01L21/02573 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/32

Abstract: A nitride semiconductor light emitting device and a manufacturing method thereof are provided. The nitride semiconductor light emitting device includes: forming a first conductivity-type nitride semiconductor layer on a substrate; forming an active layer on the first conductivity-type nitride semiconductor layer; and forming a second conductivity-type nitride semiconductor layer on the active layer. High output can be obtained by increasing doping efficiency in growing the conductivity type nitride semiconductor layer.

Abstract translation: 提供一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括：在衬底上形成第一导电型氮化物半导体层; 在所述第一导电型氮化物半导体层上形成有源层; 以及在所述有源层上形成第二导电型氮化物半导体层。 可以通过增加导电型氮化物半导体层的生长中的掺杂效率来获得高输出。

公开(公告)号：US20160013362A1

公开(公告)日：2016-01-14

申请号：US14752814

申请日：2015-06-26

Applicant: Jae Hyeok HEO ,  Jung Sub KIM ,  Young Jin CHOI ,  Jin Sub LEE ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN

Inventor： Jae Hyeok HEO ,  Jung Sub KIM ,  Young Jin CHOI ,  Jin Sub LEE ,  Sam Mook KANG ,  Yeon Woo SEO ,  Han Kyu SEONG ,  Dae Myung CHUN

IPC: H01L33/06 ,  H01L33/32 ,  H05B33/08 ,  H01L33/24 ,  H01L33/00 ,  H01L27/15 ,  H01L33/62

CPC classification number: H01L33/06 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05B33/0803 ,  H01L2924/00014

Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.

Abstract translation: 提供了一种纳米结构半导体发光器件，其包括由第一导电型半导体形成的基极层，设置在基底层上并具有多个开口的绝缘层，以及多个发光纳米结构， 开口。 每个发光纳米结构包括由第一导电型半导体形成的纳米孔，以及依次设置在纳米孔表面上的有源层和第二导电型半导体层。 多个发光纳米结构通过相同的生长工艺形成，并分成n组（其中n为2以上的整数），每组具有至少两个发光纳米结构。 纳米孔的直径，高度和间距中的至少一个是不同的，使得有源层通过组发射具有不同波长的光。

公开(公告)号：US07362874B2

公开(公告)日：2008-04-22

申请号：US10744502

申请日：2003-12-21

Applicant: Jin Sub Lee ,  Takashi Ohyaba ,  Masao Gibo ,  Hyeon Goo Yoon

Inventor： Jin Sub Lee ,  Takashi Ohyaba ,  Masao Gibo ,  Hyeon Goo Yoon

IPC: H04R5/02

CPC classification number: H04R5/02 ,  H04R2205/022 ,  H04R2205/024

Abstract: A surround speaker system according to the present invention includes an integral speaker in which a surround speaker is integrally formed with a front speaker, a canceling device for canceling a directly propagating sound of the surround speaker, and a reflective device for reflecting the output sound of the surround speaker.

Abstract translation: 根据本发明的环绕扬声器系统包括整体扬声器，其中环绕扬声器与前置扬声器一体形成，用于消除环绕扬声器的直接传播声音的抵消装置，以及用于反映环绕扬声器的输出声音的反射装置 环绕扬声器。