公开(公告)号：US20130334290A1

公开(公告)日：2013-12-19

申请号：US13592051

申请日：2012-08-22

Applicant: Young Ju LEE ,  Yun Bog KIM ,  Seon Young MYOUNG ,  Suk Jin HAM ,  Seong Chan PARK ,  Hyun Jung LEE

Inventor： Young Ju LEE ,  Yun Bog KIM ,  Seon Young MYOUNG ,  Suk Jin HAM ,  Seong Chan PARK ,  Hyun Jung LEE

IPC: B23K3/053 ,  B23K1/00

CPC classification number: B23K3/0623

Abstract: Disclosed herein is a solder paste droplet ejection apparatus including: a nozzle cap forming an appearance and including a heating electric wire provided inside thereof; a nozzle unit formed inside the nozzle cap, spaced apart from the nozzle cap, and surrounded by the nozzle cap; an ejection probe formed inside the nozzle unit, spaced apart from the nozzle unit, and surrounded by the nozzle unit; and a transfer unit formed in a top portion of the nozzle cap and used for a minute movement, wherein a solder paste supplied in a space between the nozzle unit and the ejection probe is ejected in a droplet shape along the ejection probe.

Abstract translation: 这里公开了一种焊锡膏液滴喷射装置，其包括形成外观的喷嘴帽，并且包括设置在其内部的加热电线; 喷嘴单元，其形成在所述喷嘴盖的内部，与所述喷嘴帽间隔开并且被所述喷嘴盖包围; 形成在喷嘴单元内的喷嘴，与喷嘴单元间隔开并被喷嘴单元包围; 以及形成在所述喷嘴帽的顶部并用于微小移动的转印单元，其中在所述喷嘴单元和所述喷射探针之间的空间中供应的焊膏沿着所述喷射探针以液滴形式喷射。

公开(公告)号：US20240054512A1

公开(公告)日：2024-02-15

申请号：US18492370

申请日：2023-10-23

Applicant: Hyun Jung LEE

Inventor： Hyun Jung LEE

IPC: G06Q30/0204 ,  G06N3/08

CPC classification number: G06Q30/0204 ,  G06N3/08

Abstract: The present disclosure relates to a method for predicting demand using a visual schema of a product, a device therefor, and a computer program therefor. The demand predicting method includes the operations of: creating visual schemas in which attributes of a product are digitized; analyzing the visual schemas and creating visual schema analysis data which are data relating to the attributes of the product; creating prediction data which are data obtained as a result of demand prediction analysis by attributes of the product using the visual schema analysis data; and creating visual narrative data expressing the prediction data into correlation between products or customers, and describing demand prediction.

公开(公告)号：US20220067763A1

公开(公告)日：2022-03-03

申请号：US17462730

申请日：2021-08-31

Applicant: Hyun Jung LEE

Inventor： Hyun Jung LEE

IPC: G06Q30/02 ,  G06N3/08

Abstract: The present disclosure relates to a method for predicting demand using a visual schema of a product, a device therefor, and a computer program therefor. The demand predicting method includes the operations of: creating visual schemas in which attributes of a product are digitized; analyzing the visual schemas and creating visual schema analysis data which are data relating to the attributes of the product; creating prediction data which are data obtained as a result of demand prediction analysis by attributes of the product using the visual schema analysis data; and creating visual narrative data expressing the prediction data into correlation between products or customers, and describing demand prediction.

公开(公告)号：US20210198011A1

公开(公告)日：2021-07-01

申请号：US16066062

申请日：2016-12-21

Applicant: Een Suk PARK ,  Hyun Seo LEE ,  Hyun Jung LEE ,  Hyun Ah LEE

Inventor： Een Suk PARK ,  Hyun Seo LEE ,  Hyun Jung LEE ,  Hyun Ah LEE

IPC: B65D33/10 ,  B65D88/22

Abstract: Disclosed is a bulk bag having self-standing loops. The bulk bag is configured with a bag-shaped body having a reversed “U”-shaped loop protruding upwardly from an outside thereof and configured to flexibly stand upright by itself from a folded position upon unstacking of bodies, wherein the loop is coupled to the body at a position spaced downwardly apart from a top edge of the body by a predetermined distance, the loop having an air tube having a predetermined length and coupled to an outside of the loop. The loop is configured with a semicircular arc-shaped hook portion and “I”-shaped supporting portions respectively extending from opposite ends of the hook portion, and the air tube is coupled with the hook portion and an at least one supporting portion and is heat-treated and flexibly bent at a portion corresponding to a boundary point between the hook portion and the supporting portion.

公开(公告)号：US20160336450A1

公开(公告)日：2016-11-17

申请号：US15093892

申请日：2016-04-08

Applicant: Yong-Suk TAK ,  Jongryeol YOO ,  Hyun Jung LEE ,  Miseon PARK ,  Bonyoung KOO ,  Sunjung KIM

Inventor： Yong-Suk TAK ,  Jongryeol YOO ,  Hyun Jung LEE ,  Miseon PARK ,  Bonyoung KOO ,  Sunjung KIM

IPC: H01L29/78 ,  H01L29/08

CPC classification number: H01L29/7851 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7849

Abstract: A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.

Abstract translation: 半导体器件包括在衬底上并沿第一方向延伸的翅片结构，在翅片结构上交叉的栅电极，在栅电极的相对侧的翅片结构上的源/漏区和鳍结构之间的阻挡层 和源极/漏极区域中的每一个。 翅片结构包括具有与衬底的晶格常数不同的晶格常数的材料，鳍结构，源极/漏极区和阻挡层包括锗，并且阻挡层中的锗浓度大于鳍结构中的锗浓度 并且在每个源极/漏极区域中小于最大锗浓度。

公开(公告)号：US20160293763A1

公开(公告)日：2016-10-06

申请号：US14989956

申请日：2016-01-07

Applicant: Dongwoo KIM ,  Seung Hun LEE ,  Sunjung KIM ,  Hyun Jung LEE ,  Bonyoung KOO

Inventor： Dongwoo KIM ,  Seung Hun LEE ,  Sunjung KIM ,  Hyun Jung LEE ,  Bonyoung KOO

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/06 ,  H01L29/10 ,  H01L29/165

CPC classification number: H01L29/7849 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/785

Abstract: A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.

Abstract translation: 半导体器件包括衬底上的缓冲层，缓冲层具有不同于衬底的晶格常数，从缓冲层向上突出的鳍结构，在鳍结构上交叉的栅电极，侧面的覆层 的翅片结构并且覆盖翅片结构的顶表面和侧壁，以及覆盖层和鳍结构之间的界面层，界面层包括与缓冲层相同的元件。