Methods of manufacturing a semiconductor device
    1.
    发明申请
    Methods of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US20070010068A1

    公开(公告)日:2007-01-11

    申请号:US11481928

    申请日:2006-07-07

    CPC classification number: H01L21/32105 H01L21/28273 H01L29/42324

    Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

    Abstract translation: 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中,可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤,以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺,从而将氧气提供到 半导体衬底,同时将温度从第一温度升至第二温度,以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

    Methods of manufacturing a semiconductor device
    2.
    发明授权
    Methods of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07592227B2

    公开(公告)日:2009-09-22

    申请号:US11481928

    申请日:2006-07-07

    CPC classification number: H01L21/32105 H01L21/28273 H01L29/42324

    Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

    Abstract translation: 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中,可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤,以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺,从而将氧气提供到 半导体衬底,同时将温度从第一温度升至第二温度,以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

    Capacitor and method of manufacturing the same
    3.
    发明申请
    Capacitor and method of manufacturing the same 审中-公开
    电容器及其制造方法

    公开(公告)号:US20080054400A1

    公开(公告)日:2008-03-06

    申请号:US11878698

    申请日:2007-07-26

    CPC classification number: H01L28/91 H01L27/10814 H01L27/10852

    Abstract: Example embodiments relate to a capacitor including p-type doped silicon germanium and a method of manufacturing the capacitor. The capacitor may include a lower electrode, a dielectric layer, an upper electrode, a barrier layer and a capping layer. The lower electrode may have a cylindrical shape. The dielectric layer may be on the lower electrode. The dielectric layer may have a uniform thickness. The upper electrode may be on the dielectric layer. The upper electrode may have a more uniform thickness. The capping layer may be on the upper electrode. The capping layer may include a silicon germanium layer doped with p-type impurities. The barrier layer may be between the upper electrode and the capping layer to prevent (or reduce) the p-type impurities from infiltrating into the dielectric layer.

    Abstract translation: 示例性实施例涉及包括p型掺杂硅锗的电容器和制造电容器的方法。 电容器可以包括下电极,电介质层,上电极,阻挡层和封盖层。 下部电极可以具有圆筒形状。 电介质层可以在下电极上。 介电层可以具有均匀的厚度。 上电极可以在电介质层上。 上部电极可以具有更均匀的厚度。 覆盖层可以在上电极上。 覆盖层可以包括掺杂有p型杂质的硅锗层。 阻挡层可以在上电极和覆盖层之间,以防止(或减少)p型杂质渗透到电介质层中。

    Method and system for preventing reverse rotation operation of engine
    4.
    发明授权
    Method and system for preventing reverse rotation operation of engine 有权
    用于防止发动机反转运转的方法和系统

    公开(公告)号:US06691690B2

    公开(公告)日:2004-02-17

    申请号:US10216497

    申请日:2002-08-09

    Applicant: Hyun-Jin Shin

    Inventor: Hyun-Jin Shin

    CPC classification number: F02D41/009 F02D2250/06 F02P11/02

    Abstract: The present invention relates to a method and system for preventing reverse rotation operation of an engine using a system that includes a crank angle sensor (CAS), a cam position sensor (CPS), and an engine control unit for receiving signals from the CAS and the CPS to perform engine control. The method includes determining if a piston in a specific cylinder is at a predetermined location using a level of a CPS signal at a leading edge and a trailing edge of a CAS signal; determining if the engine is rotating in reverse using the CPS signal level at the leading edge and trailing edge of the CAS signal in the case where it is determined that the piston of the specific cylinder is at the predetermined location; and discontinuing operation of the engine if it is determined that the engine is undergoing reverse rotation.

    Abstract translation: 本发明涉及一种使用包括曲柄角传感器(CAS),凸轮位置传感器(CPS)和用于从CAS接收信号的发动机控制单元的系统来防止发动机的反向旋转运行的方法和系统,以及 CPS执行发动机控制。 该方法包括使用CAS信号的前沿和后沿处的CPS信号的电平来确定特定气缸中的活塞是否处于预定位置; 在确定特定气缸的活塞在预定位置的情况下,使用CPS信号电平在CAS信号的前沿和后端确定发动机是否反向旋转; 并且如果确定发动机正在进行反向旋转,则停止发动机的操作。

    System for controlling devices and information on network by using hand gestures
    5.
    发明授权
    System for controlling devices and information on network by using hand gestures 有权
    通过手势控制网络设备和信息的系统

    公开(公告)号:US08723792B2

    公开(公告)日:2014-05-13

    申请号:US12417848

    申请日:2009-04-03

    CPC classification number: G06F3/017 G06F19/00

    Abstract: The disclosure relates to a system for controlling devices and information on a network by hand gestures, and more particularly, to a system for controlling devices and information on a network by hand gestures in which a device or a file to be controlled is selected by a user and a display device is pointed so that information and data can be shared and that various devices can be coupled to each other easily and can be controlled easily.The system for controlling devices and information on a network by hand gestures can remarkably improve the interaction between various input and display devices and a user under a ubiquitous computing environment.

    Abstract translation: 本公开涉及一种用于通过手势来控制网络上的设备和信息的系统,更具体地,涉及一种用于通过手动手势来控制设备和网络上的信息的系统,其中要控制的设备或文件被 用户和显示设备被指向,使得可以共享信息和数据,并且可以容易地将各种设备彼此耦合并且可以容易地被控制。 通过手势控制网络上的设备和信息的系统可以显着提高各种输入和显示设备与无处不在的计算环境下的用户之间的交互。

    SYSTEM FOR CONTROLLING DEVICES AND INFORMATION ON NETWORK BY USING HAND GESTURES
    6.
    发明申请
    SYSTEM FOR CONTROLLING DEVICES AND INFORMATION ON NETWORK BY USING HAND GESTURES 有权
    通过使用手势控制设备和网络信息的系统

    公开(公告)号:US20100073287A1

    公开(公告)日:2010-03-25

    申请号:US12417848

    申请日:2009-04-03

    CPC classification number: G06F3/017 G06F19/00

    Abstract: The disclosure relates to a system for controlling devices and information on a network by hand gestures, and more particularly, to a system for controlling devices and information on a network by hand gestures in which a device or a file to be controlled is selected by a user and a display device is pointed so that information and data can be shared and that various devices can be coupled to each other easily and can be controlled easily.The system for controlling devices and information on a network by hand gestures can remarkably improve the interaction between various input and display devices and a user under a ubiquitous computing environment.

    Abstract translation: 本公开涉及一种用于通过手势来控制网络上的设备和信息的系统,更具体地,涉及一种用于通过手动手势来控制设备和网络上的信息的系统,其中要控制的设备或文件被 用户和显示设备被指向,使得可以共享信息和数据,并且可以容易地将各种设备彼此耦合并且可以容易地被控制。 通过手势控制网络上的设备和信息的系统可以显着提高各种输入和显示设备与无处不在的计算环境下的用户之间的交互。

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