公开(公告)号：US20110197155A1

公开(公告)日：2011-08-11

申请号：US13015836

申请日：2011-01-28

Applicant: Hyung Min LEE ,  Myeong Lo LEE

Inventor： Hyung Min LEE ,  Myeong Lo LEE

IPC: G06F3/048

CPC classification number: G06F3/04883 ,  G06F1/1616 ,  G06F1/1641 ,  G06F1/1643 ,  G06F1/1647 ,  G06F3/0486 ,  G06F2203/04803

Abstract: A mobile device with dual display units and a method for executing a clipboard function on the mobile device are provided. The method includes displaying screen images on at least one of a first display unit and a second display unit according to an execution of an application, displaying a clipboard area on the first display unit and the second display unit according to an execution of the clipboard function, where the clipboard area includes regions allocated to the first display unit and the second display unit, respectively, and controlling the registration or the addition of an object on the first display unit or the second display unit in which a clipboard event occurs.

Abstract translation: 提供了具有双显示单元的移动设备和用于在移动设备上执行剪贴板功能的方法。 该方法包括根据应用的执行在第一显示单元和第二显示单元中的至少一个上显示屏幕图像，根据剪贴板功能的执行在第一显示单元和第二显示单元上显示剪贴板区域 其中剪贴板区域分别包括分配给第一显示单元和第二显示单元的区域，并且控制在第一显示单元或发生剪贴板事件的第二显示单元上的对象的注册或添加。

公开(公告)号：US20120327718A1

公开(公告)日：2012-12-27

申请号：US13531998

申请日：2012-06-25

Applicant: Hyung Min LEE

Inventor： Hyung Min LEE

IPC: G11C16/10

CPC classification number: G11C16/06 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/345

Abstract: An operating method of a semiconductor memory device includes performing a first LSB program loop for storing first LSB data in first memory cells of a word line, performing a second LSB program loop for storing second LSB data in second memory cells of the selected word line and for detecting over-erased memory cells having threshold voltages lower than an over-erase reference voltage of a negative potential to raise the threshold voltages to be higher than the over-erase reference voltage, performing a first MSB program loop for storing first MSB data in the first memory cells, and performing a second MSB program loop for storing second MSB data in the second memory cells.

Abstract translation: 半导体存储器件的操作方法包括：执行第一LSB程序循环，用于将第一LSB数据存储在字线的第一存储单元中，执行用于将第二LSB数据存储在所选字线的第二存储器单元中的第二LSB程序循环;以及 用于检测具有低于负电位的过擦除参考电压的阈值电压的过擦除存储器单元，以将阈值电压升高到高于过擦除参考电压，执行用于存储第一MSB数据的第一MSB程序循环 第一存储器单元，并且执行用于在第二存储器单元中存储第二MSB数据的第二MSB程序循环。