Abstract:
A memory includes a cell string including a plurality of memory cells connected in series, a bit line connected to the cell string, a voltage transfer unit configured to electrically connect the bit line and a sensing node in response to a control signal, and a page buffer configured to sense a voltage of the bit line through the sensing node in a sensing period, wherein the page buffer decides a voltage level of the control signal based on a threshold voltage of the target memory cell, which corresponds to a verification target among the plurality of memory cells in the sensing period.
Abstract:
A memory includes a cell string including a plurality of memory cells connected in series, a bit line connected to the cell string, a voltage transfer unit configured to electrically connect the bit line and a sensing node in response to a control signal, and a page buffer configured to sense a voltage of the bit line through the sensing node in a sensing period, wherein the page buffer decides a voltage level of the control signal based on a threshold voltage of the target memory cell, which corresponds to a verification target among the plurality of memory cells in the sensing period.
Abstract:
A digital-to-analog converter includes a voltage-to-current converter, a current-mode digital-to-analog converter and an operational amplifier. The voltage-to-current converter generates a first current signal, and the current-mode digital-to-analog converter generates a second current signal. The operational amplifier modulates a drain current in response to the second current signal and generates an output signal having an offset.
Abstract:
A digital-to-analog conversion circuit includes a digital-to-analog converter and a buffer amplifier. The digital-to-analog converter receives upper bits of digital data and a plurality of analog voltages and is configured to output two adjacent analog voltages of the plurality of analog voltages based on the upper bits. The buffer amplifier includes two input terminals. One of the input terminals receives one of the two adjacent analog voltages and the other input terminal receives the other adjacent analog voltage. The buffer amplifier is configured to generate a current offset by controlling a current flowing into each of the two input terminals based on lower bits of the digital bits.
Abstract:
Embodiments of present invention relate to a nonvolatile memory device that includes a first page buffer controlling any one of a first even bit line and a first odd bit line; a second page buffer controlling any one of a second even bit line and a second odd bit line; wherein the second page buffer operates the second odd bit line according to program when the first page buffer operates the first even bit line according to program, and the second page buffer operates the second even bit line according to program when the first page buffer operates the first odd bit line according to program.
Abstract:
A digital-to-analog converter includes a voltage-to-current converter, a current-mode digital-to-analog converter and an operational amplifier. The voltage-to-current converter generates a first current signal, and the current-mode digital-to-analog converter generates a second current signal. The operational amplifier modulates a drain current in response to the second current signal and generates an output signal having an offset.
Abstract:
Embodiments of present invention relate to a nonvolatile memory device that includes a first page buffer controlling any one of a first even bit line and a first odd bit line; a second page buffer controlling any one of a second even bit line and a second odd bit line; wherein the second page buffer operates the second odd bit line according to program when the first page buffer operates the first even bit line according to program, and the second page buffer operates the second even bit line according to program when the first page buffer operates the first odd bit line according to program.
Abstract:
An operating method of a semiconductor memory device includes performing a first LSB program loop for storing first LSB data in first memory cells of a word line, performing a second LSB program loop for storing second LSB data in second memory cells of the selected word line and for detecting over-erased memory cells having threshold voltages lower than an over-erase reference voltage of a negative potential to raise the threshold voltages to be higher than the over-erase reference voltage, performing a first MSB program loop for storing first MSB data in the first memory cells, and performing a second MSB program loop for storing second MSB data in the second memory cells.
Abstract:
A driving apparatus for a display is provided. The driving apparatus for a display comprises a reference voltage generator, a digital-to-analog converter, and an output unit. The reference voltage generator generates a plurality of reference voltages, and receives a difference value between two adjacent reference voltages and generates a plurality of sub reference voltages. The digital-to-analog converter selects one of the reference voltages and outputs the selected reference voltage as a first analog signal. The digital-to-analog converter selects one of the sub reference voltages and outputs the selected reference voltage as a second analog signal. The output unit processes, by addition or subtraction, the first and second analog signals for output.
Abstract:
A driving apparatus for a display is provided. The driving apparatus for a display comprises: a digital/analog converter for receiving an input voltage lower than a source voltage used in a buffer amplifier for output driving, generating a plurality of reference voltages, and selecting a reference voltage corresponding to an M (M is a positive integer) bit data signal; and an amplifier for amplifying the reference voltage selected by the digital/analog converter. Therefore, a circuit area and power consumption of the driving apparatus for a display can be minimized.