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公开(公告)号：US07186446B2
公开(公告)日：2007-03-06
申请号：US10699226
申请日：2003-10-31
IPC分类号： H05H1/24
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76843
摘要： A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
摘要翻译： 一种用各种氮含量的等离子体增强层沉积TaN的方法。 使用氢和氮等离子体的混合物，膜中的氮含量可以从0到N / Ta = 1.7。 通过在TaN沉积期间关闭氮气流，容易生长TaN / Ta双层，其具有优于单个Ta层或单个TaN层的铜扩散阻挡性能。
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2.发明授权Method of forming an interconnect structure diffusion barrier with high nitrogen content 有权形成具有高氮含量的互连结构扩散阻挡层的方法公开(公告)号：US07378338B2
公开(公告)日：2008-05-27
申请号：US11461220
申请日：2006-07-31
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.
摘要翻译： 在集成电路的互连结构中，镶嵌结构中的扩散阻挡膜由具有组成TaN x x的膜形成，其中x大于1.2，厚度为0.5至5nm 。
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3.发明授权公开(公告)号：US06943097B2
公开(公告)日：2005-09-13
申请号：US10643534
申请日：2003-08-19
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L29/49
CPC分类号： H01L21/28088 , H01L21/28562 , H01L21/32053 , H01L21/76841 , H01L29/4966 , H01L2221/1078
摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.
摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。
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公开(公告)号：US07211507B2
公开(公告)日：2007-05-01
申请号：US10709865
申请日：2004-06-02
IPC分类号： H01L21/285
CPC分类号： H01L21/76846 , H01L21/28562 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.
摘要翻译： 在低k材料上沉积氮化钽（TaN）扩散阻挡区域的方法。 所述方法包括通过从钽基前体和室中的氮等离子体进行等离子体增强原子层沉积（PE-ALD）在低k材料衬底上形成保护层。 保护层的氮含量大于其钽含量。 然后通过从钽基前体和包括氢和氮的等离子体中进行PE-ALD形成基本上化学计量的氮化钽层。 本发明还包括如此形成的氮化钽 - 氮化物扩散阻挡区域。 在一个实施方案中，金属前体包括五氯化钽（TaCl 5 N 5）。 本发明在低k材料和衬垫材料之间产生尖锐的界面。
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5.发明授权公开(公告)号：US07998842B2
公开(公告)日：2011-08-16
申请号：US11214211
申请日：2005-08-29
IPC分类号： H01L21/285
CPC分类号： H01L21/28088 , H01L21/28562 , H01L21/32053 , H01L21/76841 , H01L29/4966 , H01L2221/1078
摘要： The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic silicides and a plasma-enhanced atomic layer deposition (PE-ALD) method of forming metallic silicon nitride film. The methods of the present invention are capable of forming metallic films having a thickness of a monolayer or less on the surface of a substrate. The metallic films provided in the present invention can be used for contact metallization, metal gates or as a diffusion barrier.
摘要翻译： 本发明通过利用原子层沉积（ALD）提供含有IVB族或VB族金属，硅和任选的氮的金属膜。 特别地，本发明提供形成金属硅化物的低温热ALD方法和形成金属氮化硅膜的等离子体增强原子层沉积（PE-ALD）方法。 本发明的方法能够在基材的表面上形成厚度为单层或更薄的金属膜。 本发明中提供的金属膜可用于接触金属化，金属栅极或扩散阻挡层。
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公开(公告)号：US20090302474A1
公开(公告)日：2009-12-10
申请号：US12583108
申请日：2009-08-13
IPC分类号： H01L23/532
CPC分类号： H01L21/76846 , H01L23/53238
摘要： The present invention relates to a very thin multilayer diffusion barrier for a semiconductor device and fabrication method thereof. The multilayer diffusion barrier according to the present invention is fabricated by forming a very thin, multilayer diffusion barrier composed of even thinner sub-layers, where the sub-layers are only a few atoms thick. The present invention provides a diffusion barrier layer for a semiconductor device which is in a substantially amorphous state and thermodynamically stable, even at high temperatures.
摘要翻译： 本发明涉及一种用于半导体器件的非常薄的多层扩散阻挡层及其制造方法。 根据本发明的多层扩散阻挡层通过形成由更薄的子层组成的非常薄的多层扩散阻挡层来制造，其中子层仅为几个原子厚。 本发明提供一种用于半导体器件的扩散阻挡层，该扩散阻挡层处于基本非晶态并且在高温下具有热力学稳定性。
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公开(公告)号：US07098537B2
公开(公告)日：2006-08-29
申请号：US10707117
申请日：2003-11-21
CPC分类号： H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.
摘要翻译： 在集成电路的互连结构中，镶嵌结构中的扩散阻挡膜由具有组成TaN x x的膜形成，其中x大于1.2，厚度为0.5至5nm 。
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公开(公告)号：US09422154B2
公开(公告)日：2016-08-23
申请号：US13021544
申请日：2011-02-04
IPC分类号： B81C1/00
CPC分类号： C25D11/022 , B81C1/00071 , B81C2201/0114 , C25D7/04 , C25D11/26 , C25D11/34
摘要： Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.
摘要翻译： 纳米流体通道如纳米通道和纳米孔通过使用反馈系统以受控的方式封闭或打开。 在存在电解液的情况下，在通道内生长或除去氧化物层，直到通道达到所选尺寸或闭合。 在制造过程中测量纳米流体通道的尺寸变化。 通过通道的离子电流水平可用于确定通道尺寸。 通过流体元件阵列的流体流动可以通过元件之间的流体通道的选择性氧化来控制。
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9.发明申请CHARGED ENTITIES AS LOCOMOTIVE TO CONTROL MOTION OF POLYMERS THROUGH A NANOCHANNEL 有权充电实体通过纳米通道控制聚合物的运动公开(公告)号：US20130068618A1
公开(公告)日：2013-03-21
申请号：US13611662
申请日：2012-09-12
申请人： Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Ajay K. Royyuru , Gustavo A. Stolovitzky , George F. Walker
发明人： Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Ajay K. Royyuru , Gustavo A. Stolovitzky , George F. Walker
CPC分类号： B82Y15/00 , C12Q1/6869 , C12Q2565/631
摘要： A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.
摘要翻译： 提供了一种用于控制通过纳米通道连接到聚合物的一个或多个带电实体的运动的技术。 第一储存器和第二储存器通过纳米通道连接。 电极阵列沿纳米通道定位，其中流体填充第一储存器，第二储存器和纳米通道。 第一电极在第一储存器中，第二电极位于第二储存器中。 第一和第二电极被配置为将连接到聚合物的一个或多个带电实体引导到纳米通道中。 电极阵列被配置为捕捉纳米通道中的一个或多个带电实体，以响应于被捕获而被控制。 电极阵列被配置为响应于被控制移动而沿着纳米通道移动一个或多个带电实体。
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10.发明申请公开(公告)号：US20120293915A1
公开(公告)日：2012-11-22
申请号：US13559095
申请日：2012-07-26
摘要： A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.
摘要翻译： 电容器包括形成在电介质材料中的多个纳米通道。 在纳米通道的内表面上形成导电膜，并且在导电膜上形成电荷势垒。 在纳米通道中设置电解液。 电极与纳米通道中的电解液结合形成电容器。
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