公开(公告)号：US3580732A

公开(公告)日：1971-05-25

申请号：US3580732D

申请日：1968-01-15

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  GUKELBERGER THOMAS F JR ,  LYONS VINCENT J

IPC: C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  B44D1/02

CPC classification number: C30B29/60 ,  C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A METHOD FOR SELECTIVELY GROWING SINGLE CRYSTAL ISLANDS IN A DIELECTRIC SUBSTRATE AND THE RESULTING STRUCTURE. THE SUBSTRATE HAS RECESSES FORMED IN ITS SURFACE TO RECEIVE BODIES THEREIN. BY APPLYING A TEMPERATURE GRADIENT ACROSS EACH OF THE BODIES THROUGOUT THE ENTIRE HEATING CYCLE, NUCLEATION OCCURS ONLY AT A BOTTOM POINT ON EACH OF THE

BODIES WHEN A VAPOR CONTAINING THE MATERIAL TO BE NUCLEATED IS PASSED OVER THE BODIES WITH THE MATERIAL OF THE BODIES BEING MOLTEN.