公开(公告)号：US3580732A

公开(公告)日：1971-05-25

申请号：US3580732D

申请日：1968-01-15

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  GUKELBERGER THOMAS F JR ,  LYONS VINCENT J

IPC: C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  B44D1/02

CPC classification number: C30B29/60 ,  C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A METHOD FOR SELECTIVELY GROWING SINGLE CRYSTAL ISLANDS IN A DIELECTRIC SUBSTRATE AND THE RESULTING STRUCTURE. THE SUBSTRATE HAS RECESSES FORMED IN ITS SURFACE TO RECEIVE BODIES THEREIN. BY APPLYING A TEMPERATURE GRADIENT ACROSS EACH OF THE BODIES THROUGOUT THE ENTIRE HEATING CYCLE, NUCLEATION OCCURS ONLY AT A BOTTOM POINT ON EACH OF THE

BODIES WHEN A VAPOR CONTAINING THE MATERIAL TO BE NUCLEATED IS PASSED OVER THE BODIES WITH THE MATERIAL OF THE BODIES BEING MOLTEN.

公开(公告)号：US3682729A

公开(公告)日：1972-08-08

申请号：US3682729D

申请日：1969-12-30

Applicant: IBM

Inventor： GUKELBERGER THOMAS F JR ,  KLEINFELDER WALTER J

IPC: C23F4/00 ,  G01Q70/14 ,  H01J37/317 ,  H01L21/00 ,  H01L21/26 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/60 ,  H05K3/06

CPC classification number: H01L21/265 ,  C08K5/11 ,  C08K5/54 ,  C08L83/04 ,  H01J37/317 ,  H01L21/00 ,  H01L21/26 ,  H01L21/28 ,  H01L21/76886 ,  Y10S148/051 ,  Y10S148/106 ,  Y10T428/24917

Abstract: A DEPOSITED METALLIC FILM ON A SUBSTRATE IS BOMBARDED WITH HIGH ENERGY IONS HAVING AN ENERGY OF AT LEAST 10 KEV. WITH THE IONS BEING SELECTED FROM THE GROUP OF IONS RANGING BETWEEN HELIUM AND ARGON. THE SELECTED IONS DEPEND UPON THE METAL FORMING THE FILM AND THE THICKNESS OF THE FILM. THIS BOMBARDMENT REDUCES THE YIELD STRESS OF THE FILM IN ANY AREA IN WHICH THE IONS STRIKE AND IS PARTICULARLY USEFUL TO FORM METALLIC LANDS ON S SEMICONDUCTOR SUBSTRATE.