公开(公告)号：US3466640A

公开(公告)日：1969-09-09

申请号：US3466640D

申请日：1964-01-07

Applicant: IBM

Inventor： KEEFE GEORGE E ,  MIDDELHOEK SIMON

IPC: G11C7/02 ,  G11C11/14 ,  G11B5/78

CPC classification number: G11C7/02 ,  G11C11/14

公开(公告)号：US3427600A

公开(公告)日：1969-02-11

申请号：US3427600D

申请日：1964-11-13

Applicant: IBM

Inventor： MIDDELHOEK SIMON

IPC: G11C11/14 ,  H01F10/08 ,  G11B5/00

CPC classification number: G11C11/14 ,  H01F10/08

公开(公告)号：US3445830A

公开(公告)日：1969-05-20

申请号：US3445830D

申请日：1965-07-09

Applicant: IBM

Inventor： MIDDELHOEK SIMON

IPC: G11C11/14 ,  G11B5/00

CPC classification number: G11C11/14

公开(公告)号：US3440623A

公开(公告)日：1969-04-22

申请号：US3440623D

申请日：1964-01-13

Applicant: IBM

Inventor： CHANG HSU ,  MEE CHARLES DENIS ,  VOEGELI OTTO ,  MIDDELHOEK SIMON

IPC: G11C7/02 ,  G11C11/14 ,  G11C11/15 ,  H01F10/30 ,  G11B5/64 ,  G11C11/10

CPC classification number: G11C11/15 ,  G11C7/02 ,  G11C11/14 ,  H01F10/30

公开(公告)号：US3669732A

公开(公告)日：1972-06-13

申请号：US3669732D

申请日：1969-05-22

Applicant: IBM

Inventor： MIDDELHOEK SIMON ,  SASSO GIOVANNI

IPC: C23C14/04 ,  C23F1/02 ,  H01L21/00 ,  H01L21/285 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  H01L7/00

CPC classification number: H01L23/291 ,  C23C14/042 ,  C23F1/02 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28537 ,  H01L21/31662 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A METHOD FOR MAKING A HIGH SPEED FIELD EFFECT TRANSISTOR OF THE PLANAR TYPE WITH SCHOTTKY-BARRIER OR JUNCTION CONTACTS, IN WHICH ALL APERTURES REQUIRED FOR PRODUCTION OF ELECTRODES IN AN INSULATING LAYER COVERING THE SEMICONDUCTOR BODY ARE PRODUCED SIMULTANEOUSLY. A FIELD EFFECT TRANSISTOR IN WHICH THE GATE ELECTRODE SURROUNDS THE DRAIN ELECTRODE IN A LOOP WHILE THE SOURCE ELECTRODE IS SUBDIVIDED AND ITS PARTS ESSENTIALLY SURROUND THE GAS ELECTRODE. THE CONTACT LANDS OF THE GATE ELECTRODE ARE ARRANGED ESSENTIALLY OUTSIDE THE REGION OF CAPACITIVE INFLUENCE OF THE SOURCE ELECTRODE. A SEMICONDUCTOR SURFACE IS METALLIZED BY DEPOSITING METAL THROUGH A MASK APERTURE SMALLER THAN THE SURFACE TO BE METALLIZED FOLLOWED BY HEATING TO CAUSE THE METAL TO WET THE SURFACE AND SPREAD OVER THE ENTIRE SURFACE.

公开(公告)号：US3466635A

公开(公告)日：1969-09-09

申请号：US3466635D

申请日：1966-02-15

Applicant: IBM

Inventor： MIDDELHOEK SIMON

IPC: H01F10/10 ,  G11B5/62

CPC classification number: H01F10/10