公开(公告)号：US3600218A

公开(公告)日：1971-08-17

申请号：US3600218D

申请日：1968-05-15

Applicant: IBM

Inventor： PENNEBAKER WILLIAM B

IPC: C23C14/00 ,  C23C11/14

CPC classification number: C23C14/0036 ,  Y10S148/043 ,  Y10S148/053 ,  Y10S148/113 ,  Y10S148/114 ,  Y10S148/169

Abstract: A SUBSTRATE AND SOURCE, OF SILICON (SI) OR ALUMINUM (AL), ARE POSITIONED WITHIN A NITROGEN-CONTAINING ATMOSPHERE OF LESS THAN 20 MICRONS. RADIO-FREQUENCY ENERGY IS APPLIED ACROSS THE SUBSTRATE AND SOURCE TO GENERATE A PLASMA CONTAINING SOURCE MATERIAL, AND NITROGEN WHICH REACT SO AS TO DEPOSIT A THIN INSULATING FILM, E.G., OF SILICON NITRIDE (SI3N4) OR ALUMINUM NITRIDE (ALN), RESPECTIVELY, ON THE SUBSTRATE SURFACE. PREFERABLY, THE SUBSTRATE IS MAINTAINED IN EXCESS OF 300*C. DURING THE DEPOSITION PROCESS.

公开(公告)号：US3863074A

公开(公告)日：1975-01-28

申请号：US28482472

申请日：1972-08-30

Applicant: IBM

Inventor： O'HANLON JOHN F ,  PENNEBAKER WILLIAM B

IPC: B01J19/00 ,  C23C8/36 ,  C25D11/02 ,  C23B11/00 ,  B01K1/00

CPC classification number: C25D11/005 ,  C23C8/36 ,  C25D11/026 ,  Y10S422/906

Abstract: A method of forming a resistive barrier film on an electrically conducting body of an anodizable material through reaction of negative ions with positive ions in a plasma with the positive ions of the anodizable material. A grid of positively charged wires, in the plasma adjacent the anodizable material, absorbs the low energy or cold electrons, while trapping the hot electrons in a potential well of considerable spatial extent, so that the anodization process is speeded up.

Abstract translation: 通过负离子与等离子体中的正离子与阳极氧化材料的正离子反应，在阳极氧化材料的导电体上形成电阻屏障的方法。 邻近阳极氧化材料的等离子体中的带正电荷的电线的网格吸收低能量或冷电子，同时将热电子捕获在相当大空间范围的势阱中，使得阳极氧化过程加速。

公开(公告)号：US3419761A

公开(公告)日：1968-12-31

申请号：US49478965

申请日：1965-10-11

Applicant: IBM

Inventor： PENNEBAKER WILLIAM B

IPC: C23C14/00 ,  C23C14/06 ,  H01B3/02 ,  H01J37/34 ,  H01L21/318

CPC classification number: C23C14/0652 ,  C23C14/0036 ,  H01B3/025 ,  H01J37/3402 ,  H01L21/3185 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/053 ,  Y10S148/114

公开(公告)号：US3303067A

公开(公告)日：1967-02-07

申请号：US33340663

申请日：1963-12-26

Applicant: IBM

Inventor： HAERING RUDOLPH R ,  MIKSIC MARK G ,  PENNEBAKER WILLIAM B

IPC: H01L21/203 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/78681 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/02631 ,  H01L21/02639 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78 ,  Y10S148/053 ,  Y10S148/064 ,  Y10S148/15 ,  Y10S148/158 ,  Y10S148/169 ,  Y10S252/951 ,  Y10S438/909

公开(公告)号：US3289053A

公开(公告)日：1966-11-29

申请号：US33327963

申请日：1963-12-26

Applicant: IBM

Inventor： HAERING RUDOLPH R ,  MIKSIC MARK G ,  PENNEBAKER WILLIAM B

IPC: C23C14/04 ,  H01L23/29 ,  H01L29/00

CPC classification number: H01L23/29 ,  C23C14/042 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00