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    Multi-Wavelength VCSEL Array and Method of Fabrication
    1.
    发明申请
    Multi-Wavelength VCSEL Array and Method of Fabrication 有权

    公开(公告)号：US20220158417A1

    公开(公告)日：2022-05-19

    申请号：US17097330

    申请日：2020-11-13

    Applicant: II-VI Delaware, Inc.

    Inventor： Antoine Philippe Pissis ,  Evgeny Zibik

    IPC: H01S5/42 ,  H01S5/183 ,  H01S5/02

    Abstract: A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.

    Control of current spread in semiconductor laser devices
    2.
    发明授权
    Control of current spread in semiconductor laser devices 有权

    公开(公告)号：US12095232B2

    公开(公告)日：2024-09-17

    申请号：US17495227

    申请日：2021-10-06

    Applicant: II-VI Delaware, Inc.

    Inventor： Evgeny Zibik ,  Wilfried Maineult

    IPC: H01S5/22 ,  H01S5/10 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323

    CPC classification number: H01S5/2054 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/323

    Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

    LASER DEVICE WITH NON-ABSORBING MIRROR, AND METHOD
    4.
    发明申请
    LASER DEVICE WITH NON-ABSORBING MIRROR, AND METHOD 有权

    公开(公告)号：US20220263285A1

    公开(公告)日：2022-08-18

    申请号：US17249916

    申请日：2021-03-18

    Applicant: II-VI Delaware, Inc

    Inventor： René Todt ,  Markus Rösch ,  Evgeny Zibik ,  Susanne Pawlik ,  Gustavo F. Villares

    IPC: H01S5/02

    Abstract: A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.

    Vertical Cavity Surface-Emitting Laser with Independent Definition of Current and Light Confinement
    5.
    发明公开
    Vertical Cavity Surface-Emitting Laser with Independent Definition of Current and Light Confinement 审中-公开

    公开(公告)号：US20240339814A1

    公开(公告)日：2024-10-10

    申请号：US18131571

    申请日：2023-04-06

    Applicant: II-VI Delaware, Inc.

    Inventor： Stefano Tirelli ,  Eimantas Duda ,  Antoine Pissis ,  Evgeny Zibik ,  Wolfgang Kaiser

    IPC: H01S5/183

    CPC classification number: H01S5/1833 ,  H01S5/18311

    Abstract: A Vertical Cavity Surface-Emitting Laser has a body including a vertical stack of semiconductor layers one on top of the other including a current confinement layer having an area of low resistance to current flow defined by an area of high resistance to current flow, whereupon vertical current flow in the stack of semiconductor layers is directed by the area of high resistance to current flow of the current confinement layer through the area of low resistance to current flow of the current confinement layer. A separate light confinement layer is disposed below or above the current confinement layer. The light confinement layer includes one or more protrusions or recesses disposed below or above the area of low resistance to current flow of the current confinement layer.

    Multi-wavelength VCSEL array and method of fabrication
    7.
    发明授权
    Multi-wavelength VCSEL array and method of fabrication 有权

    公开(公告)号：US11876350B2

    公开(公告)日：2024-01-16

    申请号：US17097330

    申请日：2020-11-13

    Applicant: II-VI Delaware, Inc.

    Inventor： Antoine Philippe Pissis ,  Evgeny Zibik

    IPC: H01S5/42 ,  H01S5/02 ,  H01S5/183 ,  H01S5/40

    CPC classification number: H01S5/423 ,  H01S5/0206 ,  H01S5/18311 ,  H01S5/18394 ,  H01S5/4087 ,  H01S2304/02 ,  H01S2304/04

    Abstract: A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.

    SEMICONDUCTOR LASER DIODE INCLUDING INVERTED P-N JUNCTION
    8.
    发明公开
    SEMICONDUCTOR LASER DIODE INCLUDING INVERTED P-N JUNCTION 审中-公开

    公开(公告)号：US20230208108A1

    公开(公告)日：2023-06-29

    申请号：US17560445

    申请日：2021-12-23

    Applicant: II-VI Delaware, Inc.

    Inventor： Evgeny Zibik ,  Wilfried Maineult

    IPC: H01S5/323 ,  H01S5/125 ,  H01S5/32 ,  H01S5/22

    CPC classification number: H01S5/32316 ,  H01S5/22 ,  H01S5/125 ,  H01S5/3211

    Abstract: An edge-emitting GaAs-based semiconductor laser uses a tunnel junction in combination with an inverted p-n junction to address oxidation problems associated with the use of a high aluminum content p-type cladding arrangement. In particular, a tunnel junction is formed on an n-type GaAs substrate, with p-type cladding and waveguiding layers formed over the tunnel junction. N-type waveguiding and cladding layers are thereafter grown on top of the active region. Since the p-type layers are positioned below the active region and not exposed to air during processing, a relative high aluminum content may be used, which improves the thermal and electrical properties of the device. Since the n-type material does not require a high aluminum content, it may be further processed to form a ridge structure without introducing any substantial oxidation of the structure.

    Control Of Current Spread In Semiconductor Laser Devices
    9.
    发明申请
    Control Of Current Spread In Semiconductor Laser Devices 有权

    公开(公告)号：US20240413612A1

    公开(公告)日：2024-12-12

    申请号：US18809925

    申请日：2024-08-20

    Applicant: II-VI Delaware, Inc.

    Inventor： Evgeny Zibik ,  Wilfried Maineult

    IPC: H01S5/20 ,  H01S5/10 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323

    Abstract: A semiconductor laser is formed to include a current blocking layer that is positioned below the active region of the device and used to minimize current spreading beyond the defined dimensions of an output beam's optical mode. When used in conjunction with other current-confining structures typically disposed above the active region (e.g., ridge waveguide, electrical isolation, oxide aperture), the inclusion of the lower current blocking layer improves the efficiency of the device. The current blocking layer may be used in edge-emitting devices or vertical cavity surface-emitting devices, and also functions to improve mode shaping and reduction of facet deterioration by directing current flow away from the facets.

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