公开(公告)号：US20240018686A1

公开(公告)日：2024-01-18

申请号：US18351402

申请日：2023-07-12

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Yuanyuan Shi ,  Pierre Morin ,  Benjamin Groven ,  Vladislav Voronenkov

IPC: C30B25/04 ,  C30B29/46

CPC classification number: C30B25/04 ,  C30B29/46

Abstract: In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.

公开(公告)号：US11854803B2

公开(公告)日：2023-12-26

申请号：US17371936

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Pierre Morin ,  Antony Premkumar Peter

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/02636 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3212 ,  H01L21/823431 ,  H01L29/6681

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.

公开(公告)号：US20220084822A1

公开(公告)日：2022-03-17

申请号：US17371936

申请日：2021-07-09

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Pierre Morin ,  Antony Premkumar Peter

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/321

Abstract: A method for protecting a gate spacer when forming a FinFET structure, the method comprising: providing a fin with at least one dummy gate crossing the fin wherein a gate hardmask is present on top of the dummy gate; providing a gate spacer such that it is covering the dummy gate and the gate hardmask; recessing the gate spacer such that at least a part of the gate hardmask is exposed; selectively growing, by means of area selective deposition, extra capping material over the exposed part of the gate hardmask.