公开(公告)号：US10014437B2

公开(公告)日：2018-07-03

申请号：US15452543

申请日：2017-03-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU Leuven R&D

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L29/06 ,  H01L33/18 ,  H01L33/34 ,  H01L31/036 ,  H01L31/18 ,  H01L33/28 ,  H01L33/08 ,  H01L31/028 ,  H01L31/0352 ,  H01L33/24 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US09634185B2

公开(公告)日：2017-04-25

申请号：US15076427

申请日：2016-03-21

Applicant: IMEC VZW

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/18 ,  H01L33/28 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US20170179337A1

公开(公告)日：2017-06-22

申请号：US15452543

申请日：2017-03-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU Leuven R&D

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/34 ,  H01L31/18 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/028 ,  H01L33/18 ,  H01L33/08

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US20160284929A1

公开(公告)日：2016-09-29

申请号：US15076427

申请日：2016-03-21

Applicant: IMEC VZW

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L33/18

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

Abstract translation: 光学半导体器件在衬底上包括金刚石 - 立方体半导体材料的鳍片，并且在鳍的基部处包括金刚石六边形结构的半导体材料的板，其在鳍的整个宽度上延伸 ，所述板被配置为光学活性材料。 该半导体材料可以含有硅。 一种用于制造光学半导体器件的方法包括使翅片的侧壁退火，从而沿翅片的宽度引起应力梯度。