公开(公告)号：US10014437B2

公开(公告)日：2018-07-03

申请号：US15452543

申请日：2017-03-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU Leuven R&D

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L29/06 ,  H01L33/18 ,  H01L33/34 ,  H01L31/036 ,  H01L31/18 ,  H01L33/28 ,  H01L33/08 ,  H01L31/028 ,  H01L31/0352 ,  H01L33/24 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US20210116476A1

公开(公告)日：2021-04-22

申请号：US17069228

申请日：2020-10-13

Applicant: IMEC VZW

Inventor： Thomas Hantschel ,  Hugo Bender ,  Kristof Paredis ,  Antti Kanniainen

IPC: G01Q70/10 ,  G01Q70/14

Abstract: The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

公开(公告)号：US20190323977A1

公开(公告)日：2019-10-24

申请号：US16401024

申请日：2019-05-01

Applicant: IMEC vzw

Inventor： Hugo Bender

IPC: G01N23/2251 ,  H01J37/147 ,  H01J37/20 ,  H01J37/28

Abstract: The disclosed technology relates to an apparatus for tomographic analysis of a specimen based on STEM images of the specimen, as well as for tomographic analysis of the chemical composition of the specimen based on X-ray detection by EDS detectors. In one aspect, the apparatus comprises an elongated specimen holder that is rotatable about a longitudinal axis and is configured to hold a pillar-shaped specimen at the end of the holder. The longitudinal axis is positioned in a sample plane which is perpendicular to the beam direction of an electron beam produced by an electron gun. The apparatus also comprises at least two EDS detectors, each EDS detector having a detecting surface oriented perpendicularly to the sample plane and intersecting with the sample plane, wherein the two EDS detectors are positioned on opposite lateral sides of the specimen.

公开(公告)号：US11112427B2

公开(公告)日：2021-09-07

申请号：US17069228

申请日：2020-10-13

Applicant: IMEC VZW

Inventor： Thomas Hantschel ,  Hugo Bender ,  Kristof Paredis ,  Antti Kanniainen

IPC: G01Q70/10 ,  G01Q70/14 ,  G01Q60/30

Abstract: The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

公开(公告)号：US09634185B2

公开(公告)日：2017-04-25

申请号：US15076427

申请日：2016-03-21

Applicant: IMEC VZW

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/18 ,  H01L33/28 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US10890545B2

公开(公告)日：2021-01-12

申请号：US16401024

申请日：2019-05-01

Applicant: IMEC vzw

Inventor： Hugo Bender

IPC: G01N23/2251 ,  H01J37/147 ,  H01J37/20 ,  H01J37/28 ,  H01J37/244

Abstract: The disclosed technology relates to an apparatus for tomographic analysis of a specimen based on STEM images of the specimen, as well as for tomographic analysis of the chemical composition of the specimen based on X-ray detection by EDS detectors. In one aspect, the apparatus comprises an elongated specimen holder that is rotatable about a longitudinal axis and is configured to hold a pillar-shaped specimen at the end of the holder. The longitudinal axis is positioned in a sample plane which is perpendicular to the beam direction of an electron beam produced by an electron gun. The apparatus also comprises at least two EDS detectors, each EDS detector having a detecting surface oriented perpendicularly to the sample plane and intersecting with the sample plane, wherein the two EDS detectors are positioned on opposite lateral sides of the specimen.

公开(公告)号：US20170179337A1

公开(公告)日：2017-06-22

申请号：US15452543

申请日：2017-03-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU Leuven R&D

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/34 ,  H01L31/18 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/028 ,  H01L33/18 ,  H01L33/08

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US20160284929A1

公开(公告)日：2016-09-29

申请号：US15076427

申请日：2016-03-21

Applicant: IMEC VZW

Inventor： Hugo Bender ,  Yang Qiu

IPC: H01L33/00 ,  H01L33/18

CPC classification number: H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

Abstract: An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

Abstract translation: 光学半导体器件在衬底上包括金刚石 - 立方体半导体材料的鳍片，并且在鳍的基部处包括金刚石六边形结构的半导体材料的板，其在鳍的整个宽度上延伸 ，所述板被配置为光学活性材料。 该半导体材料可以含有硅。 一种用于制造光学半导体器件的方法包括使翅片的侧壁退火，从而沿翅片的宽度引起应力梯度。