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1.
公开(公告)号:US20170263700A1
公开(公告)日:2017-09-14
申请号:US15452955
申请日:2017-03-08
Applicant: IMEC VZW
Inventor: Steve Stoffels , Yoganand Saripalli
IPC: H01L29/06 , H01L29/205 , H01L29/861 , H01L21/225 , H01L21/306 , H01L21/285 , H01L21/324 , H01L29/20 , H01L29/778
CPC classification number: H01L29/0634 , H01L21/2258 , H01L21/28575 , H01L21/30612 , H01L21/3245 , H01L29/1075 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/4175 , H01L29/41766 , H01L29/42316 , H01L29/7783 , H01L29/7786 , H01L29/7787 , H01L29/861
Abstract: The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.
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公开(公告)号:US20180211837A1
公开(公告)日:2018-07-26
申请号:US15849579
申请日:2017-12-20
Applicant: IMEC VZW
Inventor: Hu Liang , Yoganand Saripalli
IPC: H01L21/02 , H01L29/778 , H01L29/66 , H01L29/20
CPC classification number: H01L21/02639 , H01L21/02458 , H01L21/02499 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02661 , H01L29/0653 , H01L29/2003 , H01L29/41766 , H01L29/66431 , H01L29/7786
Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.
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公开(公告)号:US10312083B2
公开(公告)日:2019-06-04
申请号:US15849579
申请日:2017-12-20
Applicant: IMEC VZW
Inventor: Hu Liang , Yoganand Saripalli
IPC: H01L21/02 , H01L29/66 , H01L29/778 , H01L29/20 , H01L29/417 , H01L29/06
Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.
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4.
公开(公告)号:US10263069B2
公开(公告)日:2019-04-16
申请号:US15452955
申请日:2017-03-08
Applicant: IMEC VZW
Inventor: Steve Stoffels , Yoganand Saripalli
IPC: H01L29/06 , H01L21/225 , H01L21/285 , H01L21/306 , H01L21/324 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/861 , H01L29/417 , H01L29/10 , H01L29/423 , H01L29/207
Abstract: The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.
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