公开(公告)号：US20170263700A1

公开(公告)日：2017-09-14

申请号：US15452955

申请日：2017-03-08

Applicant: IMEC VZW

Inventor： Steve Stoffels ,  Yoganand Saripalli

IPC: H01L29/06 ,  H01L29/205 ,  H01L29/861 ,  H01L21/225 ,  H01L21/306 ,  H01L21/285 ,  H01L21/324 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/0634 ,  H01L21/2258 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/3245 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861

Abstract: The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.

公开(公告)号：US20180211837A1

公开(公告)日：2018-07-26

申请号：US15849579

申请日：2017-12-20

Applicant: IMEC VZW

Inventor： Hu Liang ,  Yoganand Saripalli

IPC: H01L21/02 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L21/02639 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02661 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/7786

Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

公开(公告)号：US10312083B2

公开(公告)日：2019-06-04

申请号：US15849579

申请日：2017-12-20

Applicant: IMEC VZW

Inventor： Hu Liang ,  Yoganand Saripalli

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/06

Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

公开(公告)号：US10263069B2

公开(公告)日：2019-04-16

申请号：US15452955

申请日：2017-03-08

Applicant: IMEC VZW

Inventor： Steve Stoffels ,  Yoganand Saripalli

IPC: H01L29/06 ,  H01L21/225 ,  H01L21/285 ,  H01L21/306 ,  H01L21/324 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/861 ,  H01L29/417 ,  H01L29/10 ,  H01L29/423 ,  H01L29/207

Abstract: The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.