公开(公告)号：US20180211837A1

公开(公告)日：2018-07-26

申请号：US15849579

申请日：2017-12-20

Applicant: IMEC VZW

Inventor： Hu Liang ,  Yoganand Saripalli

IPC: H01L21/02 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20

CPC classification number: H01L21/02639 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02661 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/7786

Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.

公开(公告)号：US11664223B2

公开(公告)日：2023-05-30

申请号：US17062192

申请日：2020-10-02

Applicant: IMEC VZW

Inventor： Steve Stoffels ,  Hu Liang

IPC: H01L21/02

CPC classification number: H01L21/02639 ,  H01L21/0254 ,  H01L21/02458 ,  H01L21/02576 ,  H01L21/02598 ,  H01L21/02609

Abstract: A method for manufacturing an III-nitride semiconductor structure is provided. The method includes providing a substrate comprising a first layer having an upper surface of monocrystalline III-nitride material; providing, over the upper surface, a patterned dielectric layer comprising a first dielectric feature; loading the substrate into a process chamber; exposing the substrate to a first gas mixture comprising at least one Group III-metal organic precursor gas, a nitrogen containing gas and hydrogen gas at a predetermined temperature, thereby forming, on the upper surface, a second layer of a monocrystalline III-nitride material by area selective growth wherein two opposing sidewalls of the dielectric feature are oriented parallel to one of the {11-20} crystal planes of the first layer such that upon formation of the second layer of the monocrystalline III-nitride material, a first trench having tapered sidewalls is formed so that the crystal plane of the second layer parallel to the tapered sidewalls is one of the {1-101} crystal planes.

公开(公告)号：US20210118680A1

公开(公告)日：2021-04-22

申请号：US17062192

申请日：2020-10-02

Applicant: IMEC VZW

Inventor： Steve Stoffels ,  Hu Liang

IPC: H01L21/02

Abstract: A method for manufacturing an III-nitride semiconductor structure is provided. The method includes providing a substrate comprising a first layer having an upper surface of monocrystalline III-nitride material; providing, over the upper surface, a patterned dielectric layer comprising a first dielectric feature; loading the substrate into a process chamber; exposing the substrate to a first gas mixture comprising at least one Group III-metal organic precursor gas, a nitrogen containing gas and hydrogen gas at a predetermined temperature, thereby forming, on the upper surface, a second layer of a monocrystalline III-nitride material by area selective growth wherein two opposing sidewalls of the dielectric feature are oriented parallel to one of the {11-20} crystal planes of the first layer such that upon formation of the second layer of the monocrystalline III-nitride material, a first trench having tapered sidewalls is formed so that the crystal plane of the second layer parallel to the tapered sidewalls is one of the {1-101} crystal planes.

公开(公告)号：US20190172913A1

公开(公告)日：2019-06-06

申请号：US16171627

申请日：2018-10-26

Applicant: IMEC VZW

Inventor： Hu Liang ,  Xiuju Zhou ,  Geert Eneman

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L33/32 ,  H01L33/00 ,  H01L29/04 ,  H01L21/02

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a monocrystalline substrate having an upper surface covered with a masking layer comprising at least one opening exposing the upper surface; filling the opening by epitaxially growing therein a first layer comprising a first Group III-nitride compound; and growing the first layer further above the opening and on the masking layer by epitaxial lateral overgrowth, wherein the at least one opening has a top surface defined by three or more straight edges forming a polygon parallel to the upper surface and oriented in such a way with respect to the crystal lattice of the monocrystalline substrate so as to permit the epitaxial lateral overgrowth of the first layer in a direction perpendicular to at least one of the edges, thereby forming the semiconductor structure as an elongated structure.

公开(公告)号：US10312083B2

公开(公告)日：2019-06-04

申请号：US15849579

申请日：2017-12-20

Applicant: IMEC VZW

Inventor： Hu Liang ,  Yoganand Saripalli

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/06

Abstract: An example embodiment includes method for forming a layer of a Group III-Nitride material. The method includes providing a substrate having a main surface comprising a layer of a first Group III-nitride material. The substrate further includes, on the main surface, a dielectric layer comprising an opening exposing the first Group III-nitride material. A thermal treatment process is performed while subjecting the substrate to a gas mixture comprising a nitrogen containing gas, thereby increasing temperature of the substrate up to a temperature for growing a layer of a second Group III-nitride material. At least one Group III-metal organic precursor gas is subsequently introduced into the gas mixture at the growth temperature, thereby forming, at least in the opening on the exposed Group III-nitride material, a layer of the second Group III-nitride material by selective epitaxial growth, characterized in that the gas mixture is free of hydrogen gas.