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    Spintronic device with synthetic antiferromagnet hybrid storage layer
    4.
    发明授权
    Spintronic device with synthetic antiferromagnet hybrid storage layer 有权

    公开(公告)号：US12096700B2

    公开(公告)日：2024-09-17

    申请号：US16909718

    申请日：2020-06-23

    申请人： IMEC vzw

    发明人： Sebastien Couet ,  Van Dai Nguyen

    IPC分类号： H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    CPC分类号： H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    摘要： The disclosed technology relates generally to magnetic devices, and more particularly to magnetic memory and/or logic devices. In an aspect, a spintronic device comprises a tunnel barrier, a storage layer provided on the tunnel barrier, and a seed layer provided on the storage layer. The storage layer includes a first magnetic layer having a first crystallographic orientation provided on the tunnel barrier, a spacer layer provided on the first magnetic layer, a second magnetic layer having a second crystallographic orientation provided on the spacer layer and exchange coupled to the first magnetic layer, an antiferromagnetic coupling layer provided on the second magnetic layer, and a third magnetic layer having the second crystallographic orientation provided on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer.

    Magnetoresistive device comprising chromium
    5.
    发明授权
    Magnetoresistive device comprising chromium 有权

    公开(公告)号：US10325710B2

    公开(公告)日：2019-06-18

    申请号：US15860478

    申请日：2018-01-02

    申请人： IMEC VZW

    发明人： Johan Swerts ,  Sebastien Couet

    IPC分类号： G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

    摘要： The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

    SPINTRONIC DEVICE
    6.
    发明申请
    SPINTRONIC DEVICE 有权

    公开(公告)号：US20210126190A1

    公开(公告)日：2021-04-29

    申请号：US17079264

    申请日：2020-10-23

    申请人： IMEC vzw

    发明人： Sebastien Couet ,  Siddharth Rao ,  Robert Carpenter

    IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10

    摘要： The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.

    MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM
    8.
    发明申请
    MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM 审中-公开

    公开(公告)号：US20180190419A1

    公开(公告)日：2018-07-05

    申请号：US15860478

    申请日：2018-01-02

    申请人： IMEC VZW

    发明人： Johan Swerts ,  Sebastien Couet

    IPC分类号： H01F10/30 ,  H01F10/13 ,  G11B5/39 ,  B82Y25/00

    CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01F10/138 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/222

    摘要： The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

    Spintronic device
    9.
    发明授权
    Spintronic device 有权

    公开(公告)号：US11737371B2

    公开(公告)日：2023-08-22

    申请号：US17079264

    申请日：2020-10-23

    申请人： IMEC vzw

    发明人： Sebastien Couet ,  Siddharth Rao ,  Robert Carpenter

    IPC分类号： H10N50/80 ,  H10B61/00 ,  H10N50/85

    CPC分类号： H10N50/80 ,  H10B61/00 ,  H10N50/85

    摘要： The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.