公开(公告)号：US20210195697A1

公开(公告)日：2021-06-24

申请号：US16791612

申请日：2020-02-14

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Li-Wei YAO ,  Hsiao-Fen WEI ,  Yu-Ching LIN ,  Yi-Rong LIN ,  Kai-Ming CHANG ,  Yen-Shu LEE

IPC: H05B3/86 ,  H05B3/18

Abstract: A thin film heater includes a heat conductive layer, a heat insulation layer and a heat generation layer. The heat generation layer is disposed between the heat conductive layer and the heat insulation layer. The thermal conductivity of the heat conductive layer is greater than or equal to three times the thermal conductivity of the heat insulation layer.

公开(公告)号：US20160013111A1

公开(公告)日：2016-01-14

申请号：US14737882

申请日：2015-06-12

Applicant: Industrial Technology Research Institute

Inventor： Hsiao-Fen WEI ,  Kun-Lin CHUANG

IPC: H01L23/28

CPC classification number: H01L51/5253

Abstract: A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and 0 atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.

Abstract translation: 公开了一种基板结构和使用其的器件。 本公开的实施例提供了包括柔性衬底和第一阻挡层的衬底结构。 柔性基板具有顶表面，侧表面和底表面。 第一阻挡层设置在柔性基板的顶表面上并与其接触，其中第一阻挡层由Si，N和Z原子组成，其中Z原子选自H，C和O原子， 并且其中第一阻挡层的Si以35至42原子％的量存在，第一阻挡层的N以10至52原子％的量存在，并且第一阻挡层的Z以存在的量 6〜48原子％。

公开(公告)号：US20150027642A1

公开(公告)日：2015-01-29

申请号：US14509837

申请日：2014-10-08

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Dong-Sen CHEN ,  Hsiao-Fen WEI ,  Liang-You JIANG ,  Yu-Yang CHANG

IPC: B32B43/00

CPC classification number: B32B43/006 ,  G02F1/133305 ,  G02F2001/13613 ,  Y10T156/1116

Abstract: Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.

Abstract translation: 提供了从支撑基板分离柔性膜的方法和用于制造电子器件的方法。 从支撑衬底分离柔性膜的方法包括提供具有顶表面的衬底。 表面处理受到基板的顶表面的影响，形成具有脱离特性的顶面。 在顶表面上形成具有脱离特性的柔性膜。 切割和隔离具有脱离特性的顶表面内的柔性膜。