公开(公告)号：US10037853B2

公开(公告)日：2018-07-31

申请号：US15346435

申请日：2016-11-08

Applicant: Industrial Technology Research Institute ,  Formosa Plastics Corporation

Inventor： Po-Tsung Hsiao ,  Jung-Pin Chiou ,  Yung-Liang Tung ,  Chih-Chou Chang ,  Liang-Kun Huang ,  Po-Min Chen ,  Wan-Tun Hung

IPC: H01L21/00 ,  H01G9/00 ,  H01G9/20 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01G9/0029 ,  H01G9/2027 ,  H01G9/2059 ,  H01L31/0224 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

公开(公告)号：US11778839B2

公开(公告)日：2023-10-03

申请号：US17121887

申请日：2020-12-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Jung-Pin Chiou ,  Pei-Ting Chiu ,  Shih-Hsiung Wu

IPC: H10K30/10 ,  C01B13/18 ,  H10K85/00

CPC classification number: H10K30/10 ,  C01B13/18 ,  H10K85/00

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

公开(公告)号：US10062518B2

公开(公告)日：2018-08-28

申请号：US15905726

申请日：2018-02-26

Applicant: Industrial Technology Research Institute ,  Formosa Plastics Corporation

Inventor： Po-Tsung Hsiao ,  Jung-Pin Chiou ,  Yung-Liang Tung ,  Chih-Chou Chang ,  Liang-Kun Huang ,  Po-Min Chen ,  Wan-Tun Hung

IPC: H01G9/00 ,  H01G9/20 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01G9/0029 ,  H01G9/2027 ,  H01G9/2059 ,  H01L31/0224 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

公开(公告)号：US20230102199A1

公开(公告)日：2023-03-30

申请号：US17574140

申请日：2022-01-12

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ting Chiu ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Kuo-Wei Huang ,  Jung-Pin Chiou ,  Jen-An Chen ,  Qiao-Zhi Guan

IPC: H01G9/00 ,  C01G21/16 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42

Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.

公开(公告)号：US20220123242A1

公开(公告)日：2022-04-21

申请号：US17121887

申请日：2020-12-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Jung-Pin Chiou ,  Pei-Ting Chiu ,  Shih-Hsiung Wu

IPC: H01L51/42 ,  H01L51/00 ,  C01B13/18

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.