公开(公告)号：US11778839B2

公开(公告)日：2023-10-03

申请号：US17121887

申请日：2020-12-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Jung-Pin Chiou ,  Pei-Ting Chiu ,  Shih-Hsiung Wu

IPC: H10K30/10 ,  C01B13/18 ,  H10K85/00

CPC classification number: H10K30/10 ,  C01B13/18 ,  H10K85/00

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

公开(公告)号：US20230079784A1

公开(公告)日：2023-03-16

申请号：US17528236

申请日：2021-11-17

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Wei Huang ,  Pei-Ting Chiu ,  Yung-Liang Tung ,  Po-Tsung Hsieh ,  Tai-Fu Lin

IPC: G01N23/20091 ,  G01N1/40 ,  C07F7/24

Abstract: Provided is a method for testing a perovskite precursor solution, including: taking a perovskite precursor solution containing a plurality of dispersed perovskite colloids as a sample to perform liquid analysis, thereby obtaining an analysis information; and determining whether the perovskite precursor solution is a good product based on obtained analysis information from the liquid analysis, wherein the analysis information is at least one selected from the group consisting of element content of the colloid, element distribution, colloid size, and colloid appearance, thereby a feasible and effective testing method is defined through the correlation between the perovskite precursor colloid and the perovskite.

公开(公告)号：US11271157B1

公开(公告)日：2022-03-08

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  B05D3/02 ,  H01L51/42

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

公开(公告)号：US20210175425A1

公开(公告)日：2021-06-10

申请号：US16708446

申请日：2019-12-10

Applicant: Industrial Technology Research Institute

Inventor： Shih-Hsiung Wu ,  Yung-Liang Tung ,  Kuo-Wei Huang ,  Pei-Ting Chiu ,  Hung-Ru Hsu ,  Jia-Ming Lin

IPC: H01L51/00 ,  H01L51/42

Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.

公开(公告)号：US20230102199A1

公开(公告)日：2023-03-30

申请号：US17574140

申请日：2022-01-12

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ting Chiu ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Kuo-Wei Huang ,  Jung-Pin Chiou ,  Jen-An Chen ,  Qiao-Zhi Guan

IPC: H01G9/00 ,  C01G21/16 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42

Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.

公开(公告)号：US20220123242A1

公开(公告)日：2022-04-21

申请号：US17121887

申请日：2020-12-15

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Jung-Pin Chiou ,  Pei-Ting Chiu ,  Shih-Hsiung Wu

IPC: H01L51/42 ,  H01L51/00 ,  C01B13/18

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification.
The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

公开(公告)号：US20220069221A1

公开(公告)日：2022-03-03

申请号：US17035681

申请日：2020-09-29

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Wei Huang ,  Yung-Liang Tung ,  Shih-Hsiung Wu ,  Jen-An Chen ,  Pei-Ting Chiu ,  Yu-Hung Chen

IPC: H01L51/00 ,  B05D3/06 ,  H01L51/42 ,  B05D3/02

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n−1)M1nX(3n+1)  formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.