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公开(公告)号:US09221071B2
公开(公告)日:2015-12-29
申请号:US13845621
申请日:2013-03-18
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Jau-Chyn Huang , Kong-Wei Cheng , Wen-Sheng Chang , Tai-Chou Lee , Ching-Chen Wu
CPC classification number: B05C3/05 , C23C18/14 , H01L21/02568 , H01L21/02628 , H01L31/18
Abstract: A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.
Abstract translation: 提供了生长薄膜的方法和装置。 该方法至少包括(a)提供多个基底; (b)清洁基材; 和(c)将基材置于反应液中; (d)通过超声波使反应液振动,使得在基板上均匀地生长薄膜。
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公开(公告)号:US20130247823A1
公开(公告)日:2013-09-26
申请号:US13845621
申请日:2013-03-18
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor: Jau-Chyn Huang , Kong-Wei Cheng , Wen-Sheng Chang , Tai-Chou Lee , Ching-Chen Wu
IPC: B05C3/05
CPC classification number: B05C3/05 , C23C18/14 , H01L21/02568 , H01L21/02628 , H01L31/18
Abstract: A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.
Abstract translation: 提供了生长薄膜的方法和装置。 该方法至少包括(a)提供多个基底; (b)清洁基材; 和(c)将基材置于反应液中; (d)通过超声波使反应液振动,使得在基板上均匀地生长薄膜。
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