公开(公告)号：US20190207234A1

公开(公告)日：2019-07-04

申请号：US16215568

申请日：2018-12-10

Applicant: Industrial Technology Research Institute

Inventor： Kan-Lin Hsueh ,  Ching-Chen Wu

IPC: H01M8/04276 ,  H01M8/04186 ,  H01M8/2483

CPC classification number: H01M8/04276 ,  H01M8/04186 ,  H01M8/2483

Abstract: A channel plate structure includes a nonreactive portion and an electrochemical reactive portion. The nonreactive portion includes at least one manifold inlet, at least one manifold outlet, flow channels, and cutoff structures. The cutoff structures are respectively disposed in the flow channels, and the ratio of the total area of the cutoff structures to the area of the channel plate structure is 0.002 to 0.01 based on battery size. Each of the cutoff structures includes a gas-liquid separation compartment, a joint portion, and a convergent portion, wherein a width of the joint portion is smaller than or equal to that of the gas-liquid separation compartment, the convergent portion connects the gas-liquid separation compartment to the joint portion, and the cross-sectional area of a flow path at an downstream end of the convergent portion is smaller than that of the flow path at an upstream end of the same.

公开(公告)号：US20130247823A1

公开(公告)日：2013-09-26

申请号：US13845621

申请日：2013-03-18

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jau-Chyn Huang ,  Kong-Wei Cheng ,  Wen-Sheng Chang ,  Tai-Chou Lee ,  Ching-Chen Wu

IPC: B05C3/05

CPC classification number: B05C3/05 ,  C23C18/14 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/18

Abstract: A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.

Abstract translation: 提供了生长薄膜的方法和装置。 该方法至少包括（a）提供多个基底; （b）清洁基材; 和（c）将基材置于反应液中; （d）通过超声波使反应液振动，使得在基板上均匀地生长薄膜。

公开(公告)号：US10916786B2

公开(公告)日：2021-02-09

申请号：US16215568

申请日：2018-12-10

Applicant: Industrial Technology Research Institute

Inventor： Kan-Lin Hsueh ,  Ching-Chen Wu

IPC: H01M8/2483 ,  H01M8/18 ,  H01M8/04276 ,  H01M8/04186 ,  C25B1/34 ,  C25D5/00 ,  H01M8/0258 ,  C25B9/06 ,  H01M8/0265

Abstract: A channel plate structure includes a nonreactive portion and an electrochemical reactive portion. The nonreactive portion includes at least one manifold inlet, at least one manifold outlet, flow channels, and cutoff structures. The cutoff structures are respectively disposed in the flow channels, and the ratio of the total area of the cutoff structures to the area of the channel plate structure is 0.002 to 0.01 based on battery size. Each of the cutoff structures includes a gas-liquid separation compartment, a joint portion, and a convergent portion, wherein a width of the joint portion is smaller than or equal to that of the gas-liquid separation compartment, the convergent portion connects the gas-liquid separation compartment to the joint portion, and the cross-sectional area of a flow path at an downstream end of the convergent portion is smaller than that of the flow path at an upstream end of the same.

公开(公告)号：US10673107B2

公开(公告)日：2020-06-02

申请号：US14935123

申请日：2015-11-06

Applicant: Industrial Technology Research Institute

Inventor： Ching-Chen Wu ,  Chang-Chung Yang ,  Chun-Hsing Wu ,  Wen-Sheng Chang ,  Kan-Lin Hsueh

IPC: H01M8/10 ,  H01M12/08 ,  H01M4/36 ,  H01M4/62 ,  H01M4/38 ,  H01M4/02 ,  H01M8/22

Abstract: An electrolyte composition and an energy storage device employing the same are provided. The electrolyte composition includes a solid and a solution. The solid includes a core and a metal layer encapsulating the core, where the metal layer is selected from a group consisting of Zn, Al, Mg, Li, Na and the metal oxides thereof. In particular, the solid has a first density and the solution has a second density, and the ratio between the first density and the second density is from about 0.97 to 1.03.

公开(公告)号：US09221071B2

公开(公告)日：2015-12-29

申请号：US13845621

申请日：2013-03-18

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jau-Chyn Huang ,  Kong-Wei Cheng ,  Wen-Sheng Chang ,  Tai-Chou Lee ,  Ching-Chen Wu

IPC: B05C3/05 ,  C23C18/14 ,  H01L21/02 ,  H01L31/18

CPC classification number: B05C3/05 ,  C23C18/14 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/18

Abstract: A method and apparatus of growing a thin film are provided. The method comprises at least (a) providing a number of substrates; (b) cleaning the substrates; and (c) placing the substrates into a reaction liquid; (d) vibrating the reaction liquid by ultrasonic waves such that a thin film is grown on the substrates evenly.

Abstract translation: 提供了生长薄膜的方法和装置。 该方法至少包括（a）提供多个基底; （b）清洁基材; 和（c）将基材置于反应液中; （d）通过超声波使反应液振动，使得在基板上均匀地生长薄膜。