公开(公告)号：US20150137660A1

公开(公告)日：2015-05-21

申请号：US14290995

申请日：2014-05-30

Applicant: Industrial Technology Research Institute

Inventor： Feng-Chia Hsu ,  Tsun-Che Huang ,  Jyun-Cheng Huang

IPC: H02N1/00 ,  H02N1/08

CPC classification number: H02N1/002

Abstract: A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.

Abstract translation: 表面弹性波发生器可以包括基板。 在衬底中形成第一导电类型区域。 第二导电类型掺杂区域包括在第一导电类型区域的表面上掺杂的至少一种掺杂图案。 通过对第一导电类型区域和第二导电类型掺杂区域之间的结点施加反向偏压，形成耗尽电容区域。 此外，通过向第一导电类型区域或第二导电类型掺杂区域输入信号，在基板上产生表面弹性波。 此外，还提供了表面弹性波收发器和表面弹性波产生方法。

公开(公告)号：US09013089B2

公开(公告)日：2015-04-21

申请号：US13911041

申请日：2013-06-05

Applicant: Industrial Technology Research Institute

Inventor： Chun-Yin Tsai ,  Feng-Chia Hsu ,  Tsun-Che Huang ,  Chin-Hung Wang

IPC: H03H9/17 ,  H03H9/205 ,  H03H9/05

CPC classification number: H03H9/178 ,  B81B7/02 ,  H03H3/0072 ,  H03H3/02 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/0595 ,  H03H9/17 ,  H03H9/205 ,  H03H2003/021 ,  H03H2003/027 ,  H03H2009/02496

Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.

Abstract translation: 本公开提供了一种用于基于微机电系统（MEMS）的谐振器装置的结构。 用于基于MEMS的谐振器装置的结构包括至少一个谐振器单元。 所述至少一个谐振器单元包括其中具有沟槽的衬底。 一对第一电极设置在沟槽的一对侧壁上。 压电材料填充沟槽，覆盖一对第一电极。 第二电极嵌入压电材料中，通过压电材料与一对第一电极分离。 设置在沟槽中的第二电极平行于该对第一电极。

公开(公告)号：US20140184029A1

公开(公告)日：2014-07-03

申请号：US13911041

申请日：2013-06-05

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Yin Tsai ,  Feng-Chia Hsu ,  Tsun-Che Huang ,  Chin-Hung Wang

IPC: H01L41/047 ,  B81B7/02

CPC classification number: H03H9/178 ,  B81B7/02 ,  H03H3/0072 ,  H03H3/02 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/0595 ,  H03H9/17 ,  H03H9/205 ,  H03H2003/021 ,  H03H2003/027 ,  H03H2009/02496

Abstract: The disclosure provides a structure for a microelectromechanical system (MEMS)-based resonator device. The structure for the MEMS-based resonator device includes at least one resonator unit. The at least one resonator unit comprises a substrate having a trench therein. A pair of first electrodes is disposed on a pair of sidewalls of the trench. A piezoelectric material fills the trench, covering the pair of first electrodes. A second electrode is embedded in the piezoelectric material, separated from the pair of first electrodes by the piezoelectric material. The second electrode disposed in the trench is parallel to the pair of first electrodes.

Abstract translation: 本公开提供了一种用于基于微机电系统（MEMS）的谐振器装置的结构。 用于基于MEMS的谐振器装置的结构包括至少一个谐振器单元。 所述至少一个谐振器单元包括其中具有沟槽的衬底。 一对第一电极设置在沟槽的一对侧壁上。 压电材料填充沟槽，覆盖一对第一电极。 第二电极嵌入压电材料中，通过压电材料与一对第一电极分离。 设置在沟槽中的第二电极平行于该对第一电极。

公开(公告)号：US20140185181A1

公开(公告)日：2014-07-03

申请号：US13891774

申请日：2013-05-10

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jyun-Cheng Huang ,  Chih-Hsiang Ko ,  Tsun-Che Huang ,  Chin-Hung Wang

IPC: H01G7/00

CPC classification number: H01G5/38 ,  B81B3/0056 ,  B81B2201/0221 ,  H01G5/18 ,  H03J3/20 ,  H03J2200/39

Abstract: A tunable capacitor includes a substrate, a movable member, a first capacitive plate, a second capacitive plate, a third capacitive plate and a set of electrode plates. The movable member is disposed on the substrate. The movable member is adapted for moving away or toward the substrate to have a first position and a second position, respectively. The first capacitive plate is disposed on the movable member and faces the substrate. The second capacitive plate and the third capacitive plate are disposed on the substrate and face the first capacitive plate. The set of electrode plates, disposed on the substrate, faces the at least one movable member. The set of electrode plates, driven by an electrical voltage, generates electrostatic force causing the movable member to be drawn from the first position to the second position thereof to correspondingly adjust capacitance between the capacitive plates.

Abstract translation: 可调谐电容器包括基板，可移动元件，第一电容板，第二电容板，第三电容板和一组电极板。 可移动部件设置在基板上。 可移动部件适于移动或朝向基板移动以分别具有第一位置和第二位置。 第一电容板设置在可动构件上并且面向衬底。 第二电容板和第三电容板设置在基板上并面向第一电容板。 设置在基板上的电极板组面向至少一个可移动部件。 由电压驱动的一组电极板产生静电力，导致可动构件从第一位置拉至其第二位置，以对应地调节电容板之间的电容。

公开(公告)号：US10483875B2

公开(公告)日：2019-11-19

申请号：US14290995

申请日：2014-05-30

Applicant: Industrial Technology Research Institute

Inventor： Feng-Chia Hsu ,  Tsun-Che Huang ,  Jyun-Cheng Huang

IPC: H02N1/00

Abstract: A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.