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公开(公告)号：US10483875B2
公开(公告)日：2019-11-19
申请号：US14290995
申请日：2014-05-30
发明人： Feng-Chia Hsu , Tsun-Che Huang , Jyun-Cheng Huang
IPC分类号： H02N1/00
摘要： A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.
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公开(公告)号：US11148336B2
公开(公告)日：2021-10-19
申请号：US16286612
申请日：2019-02-27
发明人： Meng-Chiao Tsai , Feng-Chia Hsu , Chung-Yuan Su , Peng-Jen Chen
摘要： A sensing module includes a hollow body, a first photo sensor, and a second photo sensor. The hollow body includes a cavity portion and an insertion portion connected to each other. The insertion portion has a first channel and a second channel. The first photo sensor is disposed in the cavity portion of the hollow body and corresponds to the first channel to sense an ambient temperature and a test object temperature. The second photo sensor is disposed in the cavity portion of the hollow body and corresponds to the second channel to sense the ambient temperature.
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公开(公告)号：US20180188115A1
公开(公告)日：2018-07-05
申请号：US15393254
申请日：2016-12-29
发明人： Yu-Wen Hsu , Feng-Chia Hsu , Chao-Ta Huang , Shih-Ting Lin
CPC分类号： G01K7/226 , B81B7/008 , B81B7/02 , G01K1/02 , G01K2219/00
摘要： A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.
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公开(公告)号：US20200206999A1
公开(公告)日：2020-07-02
申请号：US16286612
申请日：2019-02-27
发明人： Meng-Chiao Tsai , Feng-Chia Hsu , Chung-Yuan Su , Peng-Jen Chen
摘要： A sensing module includes a hollow body, a first photo sensor, and a second photo sensor. The hollow body includes a cavity portion and an insertion portion connected to each other. The insertion portion has a first channel and a second channel. The first photo sensor is disposed in the cavity portion of the hollow body and corresponds to the first channel to sense an ambient temperature and a test object temperature. The second photo sensor is disposed in the cavity portion of the hollow body and corresponds to the second channel to sense the ambient temperature.
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公开(公告)号：US10529876B2
公开(公告)日：2020-01-07
申请号：US15856925
申请日：2017-12-28
发明人： Feng-Chia Hsu , Shing-Cheng Chang , Peng-Jen Chen , Chung-Yuan Su
IPC分类号： H01L27/146 , H01L31/0236 , H01L35/32 , G01J5/00
摘要： An infrared sensor including a substrate, an infrared absorption layer and a concave is provided. The infrared absorption layer is formed on a substrate and has a sensing surface. The concave extends toward the substrate from a sensing surface of the infrared absorption layer.
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公开(公告)号：US20190172958A1
公开(公告)日：2019-06-06
申请号：US15856925
申请日：2017-12-28
发明人： Feng-Chia Hsu , Shing-Cheng Chang , Peng-Jen Chen , Chung-Yuan Su
IPC分类号： H01L31/0236 , H01L27/146 , H01L35/32
摘要： An infrared sensor including a substrate, an infrared absorption layer and a concave is provided. The infrared absorption layer is formed on a substrate and has a sensing surface. The concave extends toward the substrate from a sensing surface of the infrared absorption layer.
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公开(公告)号：US10203252B2
公开(公告)日：2019-02-12
申请号：US15393254
申请日：2016-12-29
发明人： Yu-Wen Hsu , Feng-Chia Hsu , Chao-Ta Huang , Shih-Ting Lin
摘要： A MEMS apparatus having measuring range selector including a sensor and an IC chip is provided. The sensor includes a sensing device. The IC chip includes a voltage range selector, an analog front end, a control device and an A/D converter. The sensing device is configured to detect the physical quantity and generate a sensing voltage. The voltage range selector is configured to select a sub-voltage range having a first upper-bound and a first lower-bound. The analog front end is configured to receive the sensing voltage and output a first voltage. The A/D converter has a full scale voltage range having a second lower-bound and a second upper-bound. A ratio of the full scale voltage range to the sub-voltage range is defined as a gain factor. A difference obtained by subtracting the first lower-bound from the first voltage is defined as a shift factor. The control device is configured to adjust the first voltage to the second voltage according to the gain factor and the shift factor.
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公开(公告)号：US09966394B2
公开(公告)日：2018-05-08
申请号：US15084494
申请日：2016-03-30
发明人： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC分类号： H01L27/144 , H01L31/0216 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L31/18 , G01J5/02 , G01J5/10 , G01J5/12 , G01J5/20
CPC分类号： H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
摘要： A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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9.发明申请公开(公告)号：US20150137660A1
公开(公告)日：2015-05-21
申请号：US14290995
申请日：2014-05-30
发明人： Feng-Chia Hsu , Tsun-Che Huang , Jyun-Cheng Huang
CPC分类号： H02N1/002
摘要： A surface elastic wave generator may include a substrate. A first conductivity type region is formed in the substrate. A second conductivity type doped region includes at least one doping pattern doped on surface of the first conductivity type region. Through applying reverse bias to junctions between the first conductivity type region and the second conductivity type doped region, a depletion capacitance region is formed. Also, through inputting signal to the first conductivity type region or the second conductivity type doped region, the surface elastic wave is generated on the substrate. In addition, a surface elastic wave transceiver and surface elastic wave generation method are also provided.
摘要翻译： 表面弹性波发生器可以包括基板。 在衬底中形成第一导电类型区域。 第二导电类型掺杂区域包括在第一导电类型区域的表面上掺杂的至少一种掺杂图案。 通过对第一导电类型区域和第二导电类型掺杂区域之间的结点施加反向偏压，形成耗尽电容区域。 此外，通过向第一导电类型区域或第二导电类型掺杂区域输入信号，在基板上产生表面弹性波。 此外，还提供了表面弹性波收发器和表面弹性波产生方法。
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公开(公告)号：US20170186786A1
公开(公告)日：2017-06-29
申请号：US15084494
申请日：2016-03-30
发明人： Feng-Chia Hsu , Yu-Sheng Lin , Chun-Yin Tsai , Sheng-Ren Chiu
IPC分类号： H01L27/144 , H01L23/522 , H01L23/532 , H01L31/18 , H01L31/024 , H01L31/02 , H01L31/0232 , H01L23/528 , H01L31/0216
CPC分类号： H01L27/1443 , G01J5/023 , G01J5/024 , G01J5/10 , G01J5/12 , G01J5/20 , H01L31/02005 , H01L31/02164 , H01L31/02327 , H01L31/024 , H01L31/18
摘要： A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.
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