公开(公告)号：US20180134625A1

公开(公告)日：2018-05-17

申请号：US15386749

申请日：2016-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC: C04B35/573 ,  C04B35/628 ,  C04B35/626

CPC classification number: C04B35/573 ,  C01B31/36 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62839 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US20180327324A1

公开(公告)日：2018-11-15

申请号：US16040785

申请日：2018-07-20

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC: C04B35/573 ,  C04B35/626 ,  C04B35/628 ,  C01B32/956 ,  C30B35/00 ,  C30B23/00 ,  C30B29/36

CPC classification number: C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

Abstract: A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.