公开(公告)号：US20150368097A1

公开(公告)日：2015-12-24

申请号：US14838988

申请日：2015-08-28

Applicant: Infineon Technologies AG

Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。

公开(公告)号：US20130270658A1

公开(公告)日：2013-10-17

申请号：US13864762

申请日：2013-04-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

公开(公告)号：US09708182B2

公开(公告)日：2017-07-18

申请号：US14838988

申请日：2015-08-28

Applicant: Infineon Technologies AG

Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

IPC: H01L21/00 ,  B81C1/00 ,  B81B3/00 ,  H01L21/3063

CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

公开(公告)号：US11515264B2

公开(公告)日：2022-11-29

申请号：US16421707

申请日：2019-05-24

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include reducing a thickness of the semiconductor wafer. A carrier structure is placed on a first side of the semiconductor wafer, e.g. before or after reducing the thickness of the semiconductor wafer. The method further includes providing a support structure on a second side of the semiconductor wafer opposite to the first side, e.g. after reducing the thickness of the semiconductor wafer. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

公开(公告)号：US20220359428A1

公开(公告)日：2022-11-10

申请号：US17869114

申请日：2022-07-20

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include: reducing a thickness of the semiconductor wafer; before or after reducing the thickness of the semiconductor wafer, placing a carrier structure at a first side of the semiconductor wafer; and after reducing the thickness of the semiconductor wafer, providing a support structure at a second side of the semiconductor wafer opposite to the first side. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

公开(公告)号：US12060266B2

公开(公告)日：2024-08-13

申请号：US17248799

申请日：2021-02-08

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Markus Bergmeister ,  Bernhard Goller ,  Daniel Pieber ,  Sokratis Sgouridis

IPC: B81C1/00

CPC classification number: B81C1/00896 ,  B81C1/00047 ,  B81C1/00119 ,  B81C2201/053

Abstract: A method for producing MEMS components comprises generating a carrier having a plurality of recesses. An adhesive structure is arranged on the carrier and in the recesses. A semiconductor wafer is generated, which has a plurality of MEMS structures arranged at the first main surface of the semiconductor wafer. The adhesive structure is attached to the first main surface of the semiconductor wafer, with the recesses being arranged above the MEMS structures and the adhesive structure not contacting the MEMS structures. The semiconductor wafer is singulated into a plurality of MEMS components by applying a mechanical dicing process.

公开(公告)号：US09139427B2

公开(公告)日：2015-09-22

申请号：US13864762

申请日：2013-04-17

Applicant: Infineon Technologies AG

Inventor： Andreas Behrendt ,  Kai-Alexander Schreiber ,  Sokratis Sgouridis ,  Martin Zgaga ,  Bernhard Winkler

IPC: H01L21/311 ,  B81C1/00 ,  B81B3/00 ,  H01L21/3063

CPC classification number: B81C1/00531 ,  B81B3/0021 ,  B81B3/0094 ,  B81B2203/033 ,  B81C1/00619 ,  B81C1/00626 ,  B81C2201/0139 ,  H01L21/3063

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。