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公开(公告)号：US09139427B2
公开(公告)日：2015-09-22
申请号：US13864762
申请日：2013-04-17
Applicant: Infineon Technologies AG
Inventor： Andreas Behrendt , Kai-Alexander Schreiber , Sokratis Sgouridis , Martin Zgaga , Bernhard Winkler
IPC: H01L21/311 , B81C1/00 , B81B3/00 , H01L21/3063
CPC classification number: B81C1/00531 , B81B3/0021 , B81B3/0094 , B81B2203/033 , B81C1/00619 , B81C1/00626 , B81C2201/0139 , H01L21/3063
Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.
Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。
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公开(公告)号：US09708182B2
公开(公告)日：2017-07-18
申请号：US14838988
申请日：2015-08-28
Applicant: Infineon Technologies AG
Inventor： Andreas Behrendt , Kai-Alexander Schreiber , Sokratis Sgouridis , Martin Zgaga , Bernhard Winkler
IPC: H01L21/00 , B81C1/00 , B81B3/00 , H01L21/3063
CPC classification number: B81C1/00531 , B81B3/0021 , B81B3/0094 , B81B2203/033 , B81C1/00619 , B81C1/00626 , B81C2201/0139 , H01L21/3063
Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20160332873A1
公开(公告)日：2016-11-17
申请号：US15223794
申请日：2016-07-29
Applicant: Infineon Technologies AG
Inventor： Andre Brockmeier , Christian Kalousek , Katharina Maier , Peter Zorn , Kai-Alexander Schreiber , Francesco Solazzi
CPC classification number: B81C1/00619 , B32B37/0046 , B32B38/08 , B32B38/10 , B32B2457/14 , B81B7/008 , B81C1/0015 , B81C1/00238 , B81C1/00357 , B81C1/00492 , B81C99/0005 , B81C99/001 , B81C2201/0111 , B81C2201/0136 , B81C2201/014 , B81C2201/053 , B81C2203/0109 , B81C2203/031 , B81C2203/0735 , B81C2900/00 , Y10T156/15
Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
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公开(公告)号：US09428381B2
公开(公告)日：2016-08-30
申请号：US14194912
申请日：2014-03-03
Applicant: Infineon Technologies AG
Inventor： Andre Brockmeier , Christian Griessler , Katharina Maier , Peter Zorn , Kai-Alexander Schreiber , Francesco Solazzi
CPC classification number: B81C1/00619 , B32B37/0046 , B32B38/08 , B32B38/10 , B32B2457/14 , B81B7/008 , B81C1/0015 , B81C1/00238 , B81C1/00357 , B81C1/00492 , B81C99/0005 , B81C99/001 , B81C2201/0111 , B81C2201/0136 , B81C2201/014 , B81C2201/053 , B81C2203/0109 , B81C2203/031 , B81C2203/0735 , B81C2900/00 , Y10T156/15
Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
Abstract translation: 描述了方法，装置和装置，其中主晶片不可逆地结合到载体晶片并变薄以减小主晶片的厚度，例如降低至300μm或更小的厚度。
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公开(公告)号：US20150246809A1
公开(公告)日：2015-09-03
申请号：US14194912
申请日：2014-03-03
Applicant: Infineon Technologies AG
Inventor： Andre Brockmeier , Christian Griessler , Katharina Maier , Peter Zorn , Kai-Alexander Schreiber , Francesco Solazzi
CPC classification number: B81C1/00619 , B32B37/0046 , B32B38/08 , B32B38/10 , B32B2457/14 , B81B7/008 , B81C1/0015 , B81C1/00238 , B81C1/00357 , B81C1/00492 , B81C99/0005 , B81C99/001 , B81C2201/0111 , B81C2201/0136 , B81C2201/014 , B81C2201/053 , B81C2203/0109 , B81C2203/031 , B81C2203/0735 , B81C2900/00 , Y10T156/15
Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
Abstract translation: 描述了方法，装置和装置，其中主晶片不可逆地结合到载体晶片并变薄以减小主晶片的厚度，例如降低至300μm或更小的厚度。
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公开(公告)号：US20150368097A1
公开(公告)日：2015-12-24
申请号：US14838988
申请日：2015-08-28
Applicant: Infineon Technologies AG
Inventor： Andreas Behrendt , Kai-Alexander Schreiber , Sokratis Sgouridis , Martin Zgaga , Bernhard Winkler
CPC classification number: B81C1/00531 , B81B3/0021 , B81B3/0094 , B81B2203/033 , B81C1/00619 , B81C1/00626 , B81C2201/0139 , H01L21/3063
Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.
Abstract translation: 一种用于在半导体衬底内制造至少一个空腔的方法包括：在半导体衬底的表面在至少一个预定的腔位置干蚀刻半导体衬底，以便获得至少一个临时空腔。 该方法包括在半导体衬底的表面和至少一个临时空腔的空腔表面处沉积关于随后的湿法蚀刻工艺的保护材料。 此外，该方法包括至少在至少一个临时空腔的底部的一部分处去除保护材料以暴露半导体衬底。 接着在至少一个临时腔的底部的暴露部分对半导体衬底进行电化学蚀刻。 还公开了使用这种类型的空腔形成和相应的MEMS的微机械传感器系统的制造方法。
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公开(公告)号：US20130270658A1
公开(公告)日：2013-10-17
申请号：US13864762
申请日：2013-04-17
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Andreas Behrendt , Kai-Alexander Schreiber , Sokratis Sgouridis , Martin Zgaga , Bernhard Winkler
CPC classification number: B81C1/00531 , B81B3/0021 , B81B3/0094 , B81B2203/033 , B81C1/00619 , B81C1/00626 , B81C2201/0139 , H01L21/3063
Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.
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