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公开(公告)号：US11506560B2
公开(公告)日：2022-11-22
申请号：US16271090
申请日：2019-02-08
Applicant: Infineon Technologies AG
Inventor： Victor Popescu-Stroe , Emanuel Stoicescu , Matthias Boehm , Constantin Crisu , Uwe Fakesch , Stefan Jahn , Erhard Landgraf , Janis Weidenauer , Bernhard Winkler
Abstract: Examples provide for an apparatus, method, and computer program for comparing the output of sensor cells in an arrangement of sensor cells in an area A, including a set of at least two measurement units. A measurement unit includes at least two sensor cells, wherein at least one sensor cell of at least one measurement unit includes a sensitive sensor cell, which is sensitive with respect to a measured quantity. The sensor cells are intermixed with each other. The apparatus further includes means for selecting output signals of sensor cells of the arrangement and means for determining a measured quantity or determining an intact sensor cell by comparing output signals of different measurement units.
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公开(公告)号：US09884757B2
公开(公告)日：2018-02-06
申请号：US14136199
申请日：2013-12-20
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Bernhard Winkler , Rainer Leuschner , Horst Theuss
CPC classification number: B81B7/0058 , B81B2201/025 , B81B2201/0264 , B81B2207/012 , B81B2207/015 , B81C2203/0154 , G01L9/0054 , G01L15/00 , G01L19/141 , G01L19/148 , H01L29/84 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2924/1461 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (MEMS) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.
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公开(公告)号：US11927645B2
公开(公告)日：2024-03-12
申请号：US17463753
申请日：2021-09-01
Applicant: Infineon Technologies AG
Inventor： Dan-Ioan-Dumitru Stoica , Cesare Buffa , Alessandro Caspani , Constantin Crisu , Victor Popescu-Stroe , Bernhard Winkler
CPC classification number: G01R31/64 , G01R27/2605 , G01R35/00 , G01H11/06 , G01L9/12
Abstract: A capacitive sensor includes a first electrode structure; a second electrode structure that is counter to the first electrode structure, wherein the second electrode structure is movable relative to the first electrode structure and is capacitively coupled to the first electrode structure to form a capacitor having a capacitance that changes with a change in a distance between the first electrode structure and second electrode structure; a signal generator configured to apply an electrical signal at an input or at an output of the capacitor to induce a voltage transient response at the output of capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a time constant of the first voltage transient response and detecting the fault based on the time constant and based on whether the first electrical signal is the pull-in signal or the non-pull-in signal.
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公开(公告)号：US11422151B2
公开(公告)日：2022-08-23
申请号：US16860528
申请日：2020-04-28
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt , Bernhard Winkler
IPC: G01P15/125 , B81C1/00 , G01P15/08 , H01L21/02 , H01L21/768
Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.
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公开(公告)号：US10571681B2
公开(公告)日：2020-02-25
申请号：US15682671
申请日：2017-08-22
Applicant: Infineon Technologies AG
Inventor： Roland Meier , Klemens Pruegl , Bernhard Winkler , Thomas Popp , Raimund Foerg
Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20170371148A1
公开(公告)日：2017-12-28
申请号：US15682671
申请日：2017-08-22
Applicant: Infineon Technologies AG
Inventor： Roland Meier , Klemens Pruegl , Bernhard Winkler , Thomas Popp , Raimund Foerg
CPC classification number: G02B26/001 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/047 , B81C1/00158 , B81C1/00476 , B81C1/00539 , G02B26/007
Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
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7.发明申请MEMBRANE STRUCTURES FOR MICROELECTROMECHANICAL PIXEL AND DISPLAY DEVICES AND SYSTEMS, AND METHODS FOR FORMING MEMBRANE STRUCTURES AND RELATED DEVICES 有权微电子像素和显示器件和系统的膜结构，以及用于形成膜结构和相关器件的方法公开(公告)号：US20150362722A1
公开(公告)日：2015-12-17
申请号：US14722552
申请日：2015-05-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Roland Meier , Klemens Pruegl , Bernhard Winkler , Thomas Popp , Raimund Foerg
CPC classification number: G02B26/001 , B81C1/00158 , B81C1/00539 , G02B26/007
Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
Abstract translation: 实施例涉及微机电系统（MEMS），更具体地涉及包括用于例如显示装置的像素的膜结构。 在实施例中，膜结构包括在硅衬底上形成的腔上方的单晶硅膜。 膜结构可以包括光干涉结构，其根据膜和衬底之间的可变距离透射或反射不同波长的光。 还公开了相关设备，系统和方法。
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公开(公告)号：US09013014B2
公开(公告)日：2015-04-21
申请号：US13872214
申请日：2013-04-29
Applicant: Infineon Technologies AG
Inventor： Bernhard Winkler , Horst Theuss , Mathias Vaupel
CPC classification number: B81B7/0061 , B81B2201/0264 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00012
Abstract: In various embodiments, a chip package is provided. The chip package may include at least one chip having a plurality of pressure sensor regions and encapsulation material encapsulating the chip.
Abstract translation: 在各种实施例中，提供了芯片封装。 芯片封装可以包括具有多个压力传感器区域和封装芯片的封装材料的至少一个芯片。
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公开(公告)号：US08993394B2
公开(公告)日：2015-03-31
申请号：US13685684
申请日：2012-11-26
Applicant: Infineon Technologies AG
Inventor： Karlheinz Mueller , Robert Gruenberger , Bernhard Winkler
CPC classification number: B81C1/00246 , B81B2201/0271 , B81C2203/0742
Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a semiconductive layer disposed over a substrate. A trench is disposed in the semiconductive layer, the trench with a first sidewall and an opposite second sidewall. A first insulating material layer is disposed over an upper portion of the first sidewall, and a conductive material disposed within the trench. An air gap is disposed between the conductive material and the semiconductive layer.
Abstract translation: 公开了微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括设置在衬底上的半导体层。 沟槽设置在半导体层中，沟槽具有第一侧壁和相对的第二侧壁。 第一绝缘材料层设置在第一侧壁的上部之上，并且设置在沟槽内的导电材料。 在导电材料和半导体层之间设置气隙。
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公开(公告)号：US11953533B2
公开(公告)日：2024-04-09
申请号：US17347776
申请日：2021-06-15
Applicant: Infineon Technologies AG
Inventor： Dan-Ioan-Dumitru Stoica , Cesare Buffa , Constantin Crisu , Mihai-Liviu Tudose , Bernhard Winkler
CPC classification number: G01R27/2605 , G01R27/28 , G01R31/2843
Abstract: A capacitive sensor includes a first conductive structure; a second conductive structure that is counter to the first conductive structure, wherein the second conductive structure is movable relative to the first conductive structure in response to an external force acting thereon, wherein the second conductive structure is capacitively coupled to the first conductive structure to form a first capacitor having a first capacitance that changes with a change in a distance between the first conductive structure and second conductive structure; a signal generator configured to apply a first electrical signal step at an input or at an output of the first capacitor to induce a first voltage transient response at the output of first capacitor; and a diagnostic circuit configured to detect a fault in the capacitive sensor by measuring a first time constant of the first voltage transient response and detecting the fault based on the first time constant.
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