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公开(公告)号:US11808791B2
公开(公告)日:2023-11-07
申请号:US17850015
申请日:2022-06-27
Applicant: Infineon Technologies AG
Inventor: Guenter Schwarzberger , Sebastian Maerz , Wolfgang Raberg
IPC: G01R15/20 , G01R19/165
CPC classification number: G01R15/207 , G01R19/16571
Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
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公开(公告)号:US20230034717A1
公开(公告)日:2023-02-02
申请号:US17963288
申请日:2022-10-11
Applicant: Infineon Technologies AG
Inventor: Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.
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公开(公告)号:US20210096195A1
公开(公告)日:2021-04-01
申请号:US16948478
申请日:2020-09-21
Applicant: Infineon Technologies AG
Inventor: Clemens Muehlenhoff , Wolfgang Raberg , Dieter Suess
Abstract: Example implementations are concerned with magnetoresistive sensors and with corresponding fabrication methods for magnetoresistive sensors. One example here relates to a magnetoresistive sensor having a layer stack. The layer stack comprises a reference layer having a reference magnetization, which is fixed and has a first magnetic orientation. The layer stack comprises a magnetically free layer. The magnetically free layer has a magnetically free magnetization. The magnetically free magnetization is variable in the presence of an external magnetic field. The magnetically free magnetization has a second magnetic orientation in a ground state. One of the first or the second magnetic orientation is oriented in-plane and the other is oriented out-of-plane. The layer stack comprises a metal multilayer. In this case, either the metal multilayer is arranged adjacent to the magnetically free layer, or the metal multilayer constitutes the magnetically free layer.
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公开(公告)号:US10399394B2
公开(公告)日:2019-09-03
申请号:US15378490
申请日:2016-12-14
Applicant: Infineon Technologies AG
Inventor: Jooil Park , Felix Gow , Thomas Lange , Karine Pillet , Wolfgang Raberg , Maximilian Werner , Ren Yi You
Abstract: A sensor module is provided that includes a magnetic sensor and a microcontroller. The magnetic sensor is configured to measure a magnitude of a magnetic field component of an Earth magnetic field projected on a sensing axis of the magnetic sensor and is configured to generate a measurement signal. The magnetic sensor is configured to rotate about an axis through the Earth magnetic field such that the measurement signal oscillates between a first and second extremas as the magnitude of the magnetic field component projected onto the sensing axis changes due to rotation of the magnetic sensor about the axis. The microcontroller is configured to receive the measurement signal, acquire a predetermined number of measurement samples over a sampling period, calculate a variance value of the acquired measurement samples, and determine whether the magnetic sensor is rotating about the axis based on a threshold test of the variance value.
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公开(公告)号:US10317480B2
公开(公告)日:2019-06-11
申请号:US14881226
申请日:2015-10-13
Applicant: Infineon Technologies AG
Inventor: Wolfgang Raberg , Andreas Strasser
Abstract: A magneto resistive device having a plurality of magneto resistive sensing elements. Each of the plurality of magneto resistive sensing elements has a free layer and a reference layer. The free layer has a rounded convex contour with an aspect ratio of 2 or greater. There may be one hundred or more magneto resistive sensing elements.
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公开(公告)号:US20180172739A1
公开(公告)日:2018-06-21
申请号:US15385694
申请日:2016-12-20
Applicant: Infineon Technologies AG
Inventor: Wolfgang Raberg , Goran Keser , Matthias Rose , Rainer Markus Schaller
CPC classification number: G01R15/205 , G01R17/10
Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.
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公开(公告)号:US09523747B2
公开(公告)日:2016-12-20
申请号:US14848852
申请日:2015-09-09
Applicant: Infineon Technologies AG
Inventor: Wolfgang Raberg
CPC classification number: G01R33/093 , B82Y25/00 , G01R33/02 , G01R33/025 , G01R33/07 , G01R33/096 , G01R33/098 , G11B5/66 , G11B2005/3996 , G11C11/00
Abstract: A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer.
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公开(公告)号:US20160320461A1
公开(公告)日:2016-11-03
申请号:US15206649
申请日:2016-07-11
Applicant: Infineon Technologies AG
Inventor: Wolfgang Raberg
IPC: G01R33/09
CPC classification number: G01R33/093 , G01R33/09 , G01R33/098
Abstract: Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
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公开(公告)号:US20150309128A1
公开(公告)日:2015-10-29
申请号:US14262888
申请日:2014-04-28
Applicant: Infineon Technologies AG
Inventor: Wolfgang Raberg
IPC: G01R33/09
CPC classification number: G01R33/09 , G01R33/0041 , G01R33/098
Abstract: Magnetic field sensor devices and associated methods are disclosed. In some implementations, a second magnetic field sensor is provided, for example between bridge parts of a first magnetic field sensor.
Abstract translation: 公开了磁场传感器装置及相关方法。 在一些实施方式中,提供第二磁场传感器,例如在第一磁场传感器的桥接部分之间。
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公开(公告)号:US12092704B2
公开(公告)日:2024-09-17
申请号:US17963288
申请日:2022-10-11
Applicant: Infineon Technologies AG
Inventor: Juergen Zimmer , Wolfgang Raberg
IPC: G01R33/09
CPC classification number: G01R33/091 , G01R33/093 , G01R33/098
Abstract: Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.
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