公开(公告)号：US20160313180A1

公开(公告)日：2016-10-27

申请号：US15103344

申请日：2014-12-10

Applicant: INFINILED LIMITED

Inventor： Christopher Percival ,  Vincent Brennan

IPC: G01J1/42 ,  G01J1/04 ,  G01R31/26 ,  G01J1/02

CPC classification number: G01J1/4257 ,  G01J1/0266 ,  G01J1/0407 ,  G01J1/0411 ,  G01J1/0474 ,  G01J2001/4252 ,  G01J2001/4261 ,  G01R31/2635

Abstract: Methods and apparatus (100) for profiling a beam of a light emitting semiconductor device. The apparatus comprises a light emitting semiconductor device (102) comprising an active region (108) formed on a substrate (104) and configured to generate light when a suitable electrical current is applied to contacts on an upper surface of the device and a light emitting surface (110) defined by a lower surface of the substrate opposite the contacts. The apparatus further comprises a transmission medium (112) comprising a first surface (114) in contact with at least part of the light emitting surface of the semiconductor device and a diffusion surface (116), opposite the first surface, and configured to diffuse light emitted from the micro-LED and transmitted through the transmission medium.

Abstract translation: 用于对发光半导体器件的光束进行成形的方法和装置（100）。 该装置包括发光半导体器件（102），该发光半导体器件（102）包括形成在衬底（104）上的有源区（108），并且被配置为当适当的电流施加到器件的上表面上的触点时发光 由所述基板的与所述触点相对的下表面限定的表面（110）。 该装置还包括传输介质（112），包括与半导体器件的发光表面的至少一部分接触的第一表面（114）和与第一表面相对的扩散表面（116），并被配置为漫射光 从微型LED发射并通过传输介质传输。

公开(公告)号：US20150325746A1

公开(公告)日：2015-11-12

申请号：US14705607

申请日：2015-05-06

Applicant: InfiniLED Limited

Inventor： Christopher Percival

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L31/036 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/26 ,  H01L33/32

Abstract: A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.

Abstract translation: 一种μLED器件，包括：衬底和在衬底上生长并包括半导体材料的外延层，其中衬底和外延层的至少一部分限定台面; 在台面中的有源层，并且在施加电流时被配置为产生用于通过与台面相对的衬底的发光表面发射的光，其中衬底和外延层的晶格结构被布置成使得 晶格结构的c面相对于发光面不对准。