Abstract:
A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor units disposed on the substrate and respectively comprising: an active layer disposed on the substrate and made of polysilicon; an insulating layer disposed on the active layer; and a source electrode and a drain electrode disposed on the insulating layer, wherein the insulating layer comprises a first region corresponding to the active layer and a second region corresponding to a region outside the active layer, and a roughness of the first region is larger than that of the second region.
Abstract:
An organic light emitting diode display and a manufacturing method thereof are provided. The organic light emitting diode display includes a first substrate, a second substrate, a plurality of organic light emitting diodes, and a frit layer. The organic light emitting diodes are disposed on the first substrate, and the frit layer adheres the first substrate and the second substrate to each other. The frit layer includes a first porous region having pores, a second porous region having pores, and a third porous region having pores. The number of the pores of the first porous region with a diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the above-mentioned diameter range.
Abstract:
An organic light-emitting diode display is provided. The organic light-emitting diode display includes a first substrate, a second substrate, a frit, a metal layer, and an insulating layer. The second substrate is arranged to be separated from the first substrate. The frit is located between the first and second substrates. The metal layer is disposed on the first substrate, and the frit is located on the metal layer. The metal layer includes at least one opening. The frit is located in the opening. The frit has a number of voids arranged to correspond to the opening.
Abstract:
An organic light emitting diode display and a manufacturing method thereof are provided. The organic light emitting diode display includes a first substrate, a second substrate, a plurality of organic light emitting diodes, and a frit layer. The organic light emitting diodes are disposed on the first substrate, and the frit layer adheres the first substrate and the second substrate to each other. The frit layer includes a first porous region having pores, a second porous region having pores, and a third porous region having pores. The number of the pores of the first porous region with a diameter of larger than or equal to 4 μm and smaller than or equal to 15 μm is greater than the number of the pores of the second porous region with the above-mentioned diameter range.
Abstract:
An organic light emitting diode (OLED) display device and a display panel thereof are provided. The organic light emitting diode display panel comprises a first substrate, a first electrode, an organic light emitting layer, a second electrode, and a second substrate. The first electrode is disposed on the first substrate. The organic light emitting layer is disposed on the first electrode. The second electrode is disposed on the organic light emitting layer. The second substrate is located on the second electrode. The material of the second electrode comprises an alkaline earth element and silver. The second electrode comprises a first portion and a second portion, and the first portion is located between the second portion and the first substrate. The ratios of the alkaline earth element to silver in the first portion and in the second portion are different.
Abstract:
An organic light emitting display device includes a first substrate, an organic light emitting diode array, a thin film encapsulation layer, a second substrate, a sealant member and a buffer layer. First substrate has a light emitting region and a non-light emitting region. OLED array is configured in light emitting region covered by encapsulation layer. Second substrate has a color filter array and is arranged opposite first substrate. Sealant member is disposed between first and second substrates. Buffer layer has a first light shielding layer disposed thereon, is arranged between first and second substrates, and is configured in light emitting region. Light shielding layer is arranged between buffer layer and encapsulation layer. The sum of the buffer layer's thickness and a gap distance from buffer layer to encapsulation layer has a range from 5 to 20 μm. Buffer layer has hardness smaller than that of the color filter array.
Abstract:
An electronic device includes a first curved module and a second curved module. The first curved module includes a first electronic element and a first curved unit. The second curved module is spliced to one side of the first curved module and includes a second electronic element and a second curved unit. The first curved unit and the second curved unit include curved surfaces.
Abstract:
A splicing device includes a first splicing unit and a second splicing unit. The first splicing unit includes a first substrate, a first light-emitting unit, and a second light-emitting unit. The second splicing unit includes a second substrate, a third light-emitting unit, and a fourth light-emitting unit. P is a pitch between the first light-emitting unit and the second light-emitting unit, and a pitch between the third light-emitting unit and the fourth light-emitting unit. LA1 is a horizontal distance from a center of the second light-emitting unit to a first reference plane. LB3 is a horizontal distance from a boundary between a light-emitting surface of the second splicing unit and a second reference plane to the first reference plane. LB1x and LB1y are respectively a horizontal component and a vertical component of a distance from the boundary to a center of the third light-emitting unit. LA2 is a vertical distance from the light-emitting surface of the first splicing unit to a bottom surface of the first substrate. LB2 is a vertical distance from the bottom surface of the first substrate to the boundary. The splicing device satisfies:
Abstract:
A display device includes: a first substrate; a poly-silicon layer disposed on the first substrate; a first metal layer disposed on the poly-silicon layer and including a gate electrode; a first insulating layer disposed on the first metal layer; a second insulating layer disposed on the first insulating layer; a second metal layer covering a part of the second insulating layer; and a light emitting diode unit electrically connected to a first portion of the second metal layer, wherein a thickness of the second insulating layer under the second metal layer is larger than a thickness of the second insulating layer uncovered with the second metal layer.
Abstract:
A display device is disclosed, which comprises: a first substrate; a first insulating layer disposed on the first substrate; a second insulating layer disposed on the first insulating layer; and a patterned metal layer disposed on the second insulating layer and comprising plural conductive lines, wherein an opening region is located between two adjacent conductive lines to expose the second insulating layer, and a thickness of the second insulating layer under the conductive lines of the patterned metal layer is larger than that exposed from the opening region.