公开(公告)号：US20180102282A1

公开(公告)日：2018-04-12

申请号：US15568791

申请日：2015-05-28

Applicant: Intel Corporation

Inventor： Marie KRYSAK ,  Robert Lindsey BRISTOL ,  Paul Anton NYHUS ,  Michael J. LEESON

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32

Abstract: Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.

公开(公告)号：US20170345643A1

公开(公告)日：2017-11-30

申请号：US15529482

申请日：2014-12-24

Applicant: INTEL CORPORATION

Inventor： Todd R. YOUNKIN ,  Michael J. LEESON ,  James M. BLACKWELL ,  Ernisse S. PUTNA ,  Marie KRYSAK ,  Rami HOURANI ,  Eungnak HAN ,  Robert L. BRISTOL

IPC: H01L21/027 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/0271 ,  G03F7/0035 ,  G03F7/094 ,  G03F7/095 ,  G03F7/115 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/528 ,  H01L2224/16225

Abstract: Photodefinable alignment layers for chemical assisted patterning and approaches for forming photodefinable alignment layers for chemical assisted patterning are described. An embodiment of the invention may include disposing a chemically amplified resist (CAR) material over a hardmask that includes a switch component. The CAR material may then be exposed to form exposed resist portions. The exposure may produces acid in the exposed portions of the CAR material that interact with the switch component to form modified regions of the hardmask material below the exposed resist portions.