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公开(公告)号：US10033093B2
公开(公告)日：2018-07-24
申请号：US14141830
申请日：2013-12-27
Applicant: INTEL CORPORATION
Inventor： Adel A. Elsherbini , Telesphor Kamgaing , Sarah K. Haney
Abstract: A method including disposing a transmission line or an antenna on dielectric material; and removing a portion of the dielectric material from a region adjoining the transmission line or the antenna where the electromagnetic radiation from the transmission line or the antenna is predetermined to be greater than another portion of the dielectric material. An apparatus including a package substrate including a transmission line coupled to an antenna, the transmission line and the antenna disposed on a dielectric layer including an organic dielectric material having a first dielectric constant and a second material having a dielectric constant less than the first dielectric constant, wherein the second dielectric material adjoins a portion of the transmission line or the antenna.
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2.发明授权公开(公告)号：US09242854B2
公开(公告)日：2016-01-26
申请号：US14137538
申请日：2013-12-20
Applicant: Intel Corporation
Inventor： Sarah K. Haney , Weng Hong Teh , Feras Eid , Sasha N. Oster
CPC classification number: B81B7/0041 , B81B7/0032 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81C1/00293 , B81C1/00539 , B81C2201/013 , B81C2203/0109 , B81C2203/0136 , B81C2203/0792
Abstract: Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.
Abstract translation: 本发明的实施例描述了用于MEMS器件的气密封装和用于创建气密封装结构的工艺。 实施例包括进一步包括磁体的MEMS基板堆叠，第一层压有机介电膜，设置在磁体上的第一密封涂层，设置在密封涂层上的第二层压有机绝缘膜，设置在磁体上的MEMS器件层，以及 围绕MEMS器件层的多个金属互连。 密封板随后结合到MEMS衬底叠层并且设置在所形成的MEMS器件层上，以至少部分地形成围绕MEMS器件层的气密封装的腔体。 在各种实施例中，气密封装的空腔进一步由第一密封涂层形成，并且该组金属互连中的至少一个或沉积在该组金属互连件上的第二密封涂层。
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公开(公告)号：US10179729B2
公开(公告)日：2019-01-15
申请号：US15005826
申请日：2016-01-25
Applicant: INTEL CORPORATION
Inventor： Sarah K. Haney , Weng Hong Teh , Feras Eid , Sasha N. Oster
Abstract: Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.
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