公开(公告)号：US09780429B2

公开(公告)日：2017-10-03

申请号：US14885393

申请日：2015-10-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Barbara S. DeWitt ,  Essam Mina ,  B M Farid Rahman ,  Guoan Wang

IPC: H01P5/12 ,  H01P3/08 ,  H01P11/00

CPC classification number: H01L23/481 ,  G06F17/5077 ,  H01P3/003 ,  H01P3/026 ,  H01P3/081 ,  H01P11/001 ,  H01P11/007 ,  H01Q1/2283 ,  H01Q13/106

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

公开(公告)号：US10586752B2

公开(公告)日：2020-03-10

申请号：US15997837

申请日：2018-06-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Barbara S. DeWitt ,  Essam Mina ,  B M Farid Rahman ,  Guoan Wang

IPC: H01P5/18 ,  H01P5/22 ,  H01L23/48 ,  H01P3/08 ,  H01P11/00 ,  H01P3/00 ,  H01P3/02 ,  G06F17/50 ,  H01Q1/22 ,  H01Q13/10

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

公开(公告)号：US09362606B2

公开(公告)日：2016-06-07

申请号：US13974804

申请日：2013-08-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  University of South Carolina

Inventor： Barbara S. Dewitt ,  Essam Mina ,  B M Farid Rahman ,  Guoan Wang

IPC: H01P3/08 ,  G06F17/50 ,  H01L23/66 ,  H01P11/00 ,  H01L23/522

CPC classification number: H01P5/04 ,  G06F17/5077 ,  H01L21/768 ,  H01L23/5222 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01P1/203 ,  H01P3/081 ,  H01P3/082 ,  H01P5/12 ,  H01P11/003 ,  H03H7/38 ,  H01L2924/00

Abstract: A vertical three dimensional (3D) microstrip line structure for improved tunable characteristic impedance, methods of manufacturing the same and design structures are provided. More specifically, a method is provided that includes forming a first microstrip line structure within a back end of the line (BEOL) stack. The method further includes forming a second microstrip line structure separated from the BEOL stack by a predetermined horizontal distance.

Abstract translation: 提供了一种用于改善可调谐特性阻抗的垂直三维（3D）微带线结构，其制造方法和设计结构。 更具体地，提供了一种方法，其包括在线（BEOL）堆叠的后端中形成第一微带线结构。 该方法还包括形成与BEOL堆叠分离预定水平距离的第二微带线结构。

公开(公告)号：US10832989B2

公开(公告)日：2020-11-10

申请号：US16583987

申请日：2019-09-26

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Barbara S. DeWitt ,  Essam Mina ,  B M Farid Rahman ,  Guoan Wang

IPC: H01P5/18 ,  H01L23/48 ,  H01P3/08 ,  H01P11/00 ,  H01P3/00 ,  H01P3/02 ,  G06F30/394 ,  H01Q1/22 ,  H01Q13/10

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.

公开(公告)号：US10037931B2

公开(公告)日：2018-07-31

申请号：US15668931

申请日：2017-08-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Barbara S. DeWitt ,  Essam Mina ,  B M Farid Rahman ,  Guoan Wang

IPC: H01P5/12 ,  H01L23/48 ,  G06F17/50 ,  H01P11/00 ,  H01Q1/22 ,  H01Q13/10 ,  H01P3/08

CPC classification number: H01L23/481 ,  G06F17/5077 ,  H01P3/003 ,  H01P3/026 ,  H01P3/081 ,  H01P11/001 ,  H01P11/007 ,  H01Q1/2283 ,  H01Q13/106

Abstract: The disclosure is directed to semiconductor structures and, more particularly, to a three dimensional microstrip branchline coupler and methods of manufacture. The structure includes a plurality of through silicon vias and conductive lines electrically connected to a first end and a second end of respective ones of the plurality of through silicon vias. A first through silicon via of the plurality of through silicon vias forms a first port of a three dimensional (3D) branchline coupler. A second through silicon via of the plurality of through silicon vias forms a second port of the 3D branchline coupler. A third through silicon via of the plurality of through silicon vias forms a third port of the 3D branchline coupler. A fourth through silicon via of the plurality of through silicon vias forms a fourth port of the 3D branchline coupler.