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公开(公告)号：US09932222B2
公开(公告)日：2018-04-03
申请号：US15162994
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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2.发明申请公开(公告)号：US20140308771A1
公开(公告)日：2014-10-16
申请号：US13861620
申请日：2013-04-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括通过在MEMS光束上方和下方排出钨材料和硅材料来形成微电子机械系统（MEMS）光束结构，以在MEMS光束上方形成上腔体，并在MEMS光束下方形成下腔体结构。
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公开(公告)号：US08791016B2
公开(公告)日：2014-07-29
申请号：US13626025
申请日：2012-09-25
Applicant: International Business Machines Corporation
Inventor： Jeffrey P. Gambino , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
IPC: H01L23/48 , H01L21/768 , H01L21/70
CPC classification number: H01L23/5384 , G06F17/5045 , G06F17/5077 , H01L21/76843 , H01L21/76844 , H01L21/76898 , H01L23/481 , H01L23/562 , H01L27/0207 , H01L2224/48091 , H01L2224/73257 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the via formed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.
Abstract translation: 本文公开了通过硅通孔（TSV）和形成在半导体材料上的触点，制造方法和设计结构。 该方法包括在形成在基板上的电介质材料中形成接触孔。 该方法还包括在衬底中并通过电介质材料形成通孔。 该方法还包括使用沉积技术用金属衬垫衬里接触孔和介电材料，该沉积技术将避免在衬底中形成的通路中形成衬垫。 该方法还包括用金属填充接触孔和通孔，使得金属形成在接触孔中的衬垫上并且直接形成在通孔中的衬底上。
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公开(公告)号：US10589991B2
公开(公告)日：2020-03-17
申请号：US15894119
申请日：2018-02-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US20160264410A1
公开(公告)日：2016-09-15
申请号：US15162997
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
IPC: B81C1/00
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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Patent Agency Ranking
公开(公告)号：US09245850B2
公开(公告)日：2016-01-26
申请号：US14301395
申请日：2014-06-11
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Jeffrey P. Gambino , Cameron E. Luce , Daniel S. Vanslette , Bucknell C. Webb
IPC: H01L23/48 , H01L23/522 , H01L21/768 , H01L23/538 , G06F17/50 , H01L23/00 , H01L27/02
CPC classification number: H01L23/5384 , G06F17/5045 , G06F17/5077 , H01L21/76843 , H01L21/76844 , H01L21/76898 , H01L23/481 , H01L23/562 , H01L27/0207 , H01L2224/48091 , H01L2224/73257 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the viaformed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via.
Abstract translation: 本文公开了通过硅通孔（TSV）和形成在半导体材料上的触点，制造方法和设计结构。 该方法包括在形成在基板上的电介质材料中形成接触孔。 该方法还包括在衬底中并通过电介质材料形成通孔。 该方法还包括使用沉积技术用金属衬垫衬里接触孔和电介质材料，该沉积技术将避免衬底中通孔形成衬垫。 该方法还包括用金属填充接触孔和通孔，使得金属形成在接触孔中的衬垫上并且直接形成在通孔中的衬底上。
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公开(公告)号：US11167980B2
公开(公告)日：2021-11-09
申请号：US14837024
申请日：2015-08-27
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US10549987B2
公开(公告)日：2020-02-04
申请号：US15916962
申请日：2018-03-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09969613B2
公开(公告)日：2018-05-15
申请号：US13861620
申请日：2013-04-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09938137B2
公开(公告)日：2018-04-10
申请号：US15162997
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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