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    THRU-SILICON-VIA STRUCTURES
    1.
    发明申请
    THRU-SILICON-VIA STRUCTURES 有权
    三硅结构

    公开(公告)号：US20160358821A1

    公开(公告)日：2016-12-08

    申请号：US14733445

    申请日：2015-06-08

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Fen CHEN ,  Mukta G. FAROOQ ,  Carole D. GRAAS ,  Xiao Hu LIU

    IPC: H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/288 ,  H01L21/02

    CPC classification number: H01L21/76898 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/481

    Abstract: Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.

    Abstract translation: 提供了具有改进的性能和可靠性以及制造方法的无应力产生的通过硅通孔结构。 该方法包括在晶片材料的通孔硅通孔内的绝缘体层上形成第一导电扩散阻挡衬里。 该方法还包括在第一导电扩散阻挡层上形成应力吸收层。 该方法还包括在应力吸收层上形成第二导电扩散阻挡层。 该方法还包括在第二导电扩散阻挡层上形成铜板。

    MOISTURE DETECTION AND INGRESSION MONITORING SYSTEMS
    6.
    发明申请
    MOISTURE DETECTION AND INGRESSION MONITORING SYSTEMS 审中-公开
    水分检测和成像监测系统

    公开(公告)号：US20160327502A1

    公开(公告)日：2016-11-10

    申请号：US14706322

    申请日：2015-05-07

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

    IPC: G01N27/22

    CPC classification number: G01N27/223 ,  G01D5/24 ,  G01R27/2605 ,  H03K17/955

    Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit.

    Abstract translation: 提供了水分检测和入侵监测系统及其制造方法。 水分检测结构包括芯片边缘密封结构，其包括形成电容器的至少一个电极，其被构造成检测集成电路内的湿气进入。 电容器的至少一个电极和第二电极被偏压到地和湿度检测电路。

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