公开(公告)号：US20160358821A1

公开(公告)日：2016-12-08

申请号：US14733445

申请日：2015-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Mukta G. FAROOQ ,  Carole D. GRAAS ,  Xiao Hu LIU

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/288 ,  H01L21/02

CPC classification number: H01L21/76898 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/481

Abstract: Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier.

Abstract translation: 提供了具有改进的性能和可靠性以及制造方法的无应力产生的通过硅通孔结构。 该方法包括在晶片材料的通孔硅通孔内的绝缘体层上形成第一导电扩散阻挡衬里。 该方法还包括在第一导电扩散阻挡层上形成应力吸收层。 该方法还包括在应力吸收层上形成第二导电扩散阻挡层。 该方法还包括在第二导电扩散阻挡层上形成铜板。

公开(公告)号：US20150137375A1

公开(公告)日：2015-05-21

申请号：US14526741

申请日：2014-10-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

公开(公告)号：US20190250116A1

公开(公告)日：2019-08-15

申请号：US16392055

申请日：2019-04-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

IPC: G01N27/22 ,  G01R27/26

CPC classification number: G01N27/223 ,  G01D5/24 ,  G01R27/2605 ,  H03K17/955

Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.

公开(公告)号：US20160327502A1

公开(公告)日：2016-11-10

申请号：US14706322

申请日：2015-05-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

IPC: G01N27/22

CPC classification number: G01N27/223 ,  G01D5/24 ,  G01R27/2605 ,  H03K17/955

Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit.

Abstract translation: 提供了水分检测和入侵监测系统及其制造方法。 水分检测结构包括芯片边缘密封结构，其包括形成电容器的至少一个电极，其被构造成检测集成电路内的湿气进入。 电容器的至少一个电极和第二电极被偏压到地和湿度检测电路。

公开(公告)号：US20160071790A1

公开(公告)日：2016-03-10

申请号：US14477535

申请日：2014-09-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Cathryn J. CHRISTIANSEN ,  Roger A. DUFRESNE ,  Charles W. GRIFFIN

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Wiring structures with dummy metal features and methods of manufacture are disclosed. A structure includes a metal wiring structure, and dummy metal features in electrical and direct physical contact with the metal wiring structure in a same plane as the metal wiring structure. The dummy metal features do not change a resistance of the metal wiring structure and are remote from other structures.

Abstract translation: 公开了具有虚拟金属特征和制造方法的接线结构。 一种结构包括金属布线结构，并且在与金属布线结构相同的平面中与金属布线结构电接触和直接物理接触的虚拟金属的特征。 虚拟金属特征不会改变金属布线结构的电阻并且远离其它结构。

公开(公告)号：US20180356359A1

公开(公告)日：2018-12-13

申请号：US16107544

申请日：2018-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

IPC: G01N27/22 ,  G01R27/26 ,  G01D5/24 ,  H03K17/955

CPC classification number: G01N27/223 ,  G01D5/24 ,  G01R27/2605 ,  H03K17/955

Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.

公开(公告)号：US20150137374A1

公开(公告)日：2015-05-21

申请号：US14083929

申请日：2013-11-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Trevor A. THOMPSON ,  Eric J. WHITE

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76879 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Approaches for fabricating copper wires in integrated circuits are provided. A method of manufacturing a semiconductor structure includes forming a wire opening in a mask. The method also includes electroplating a conductive material in the wire opening. The method additionally includes forming a cap layer on the conductive material. The method further includes removing the mask. The method still further includes forming spacers on sides of the conductive material. The method additionally includes forming a dielectric film on surfaces of the cap layer and the sidewall spacers.

Abstract translation: 提供了在集成电路中制造铜线的方法。 制造半导体结构的方法包括在掩模中形成线开口。 该方法还包括在导线开口中电镀导电材料。 该方法还包括在导电材料上形成盖层。 该方法还包括去除掩模。 该方法还包括在导电材料的侧面上形成间隔物。 该方法还包括在盖层和侧壁间隔物的表面上形成电介质膜。

公开(公告)号：US20140001599A1

公开(公告)日：2014-01-02

申请号：US14013409

申请日：2013-08-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Zhong-Xiang HE ,  Tom C. LEE ,  John C. MALINOWSKI ,  Anthony K. STAMPER

IPC: H01L49/02

CPC classification number: H01L28/20 ,  H01C7/006 ,  H01C17/075 ,  H01L21/7685 ,  H01L23/5228 ,  H01L23/53295 ,  H01L24/11 ,  H01L28/24 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

Abstract: Disclosed are methods for forming a thin film resistor and terminal bond pad simultaneously. A method includes simultaneously forming a terminal bond pad on a terminal wire and a thin film resistor on two other wires.

Abstract translation: 公开了同时形成薄膜电阻器和端子接合焊盘的方法。 一种方法包括在端子线上同时形成端子接合焊盘和在另外两条导线上形成薄膜电阻器。

公开(公告)号：US20200049651A1

公开(公告)日：2020-02-13

申请号：US16655827

申请日：2019-10-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

IPC: G01N27/22 ,  G01R27/26

Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.

公开(公告)号：US20180356358A1

公开(公告)日：2018-12-13

申请号：US16107449

申请日：2018-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Fen CHEN ,  Jeffrey P. GAMBINO ,  Carole D. GRAAS ,  Wen LIU ,  Prakash PERIASAMY

IPC: G01N27/22 ,  G01R27/26 ,  G01D5/24 ,  H03K17/955

CPC classification number: G01N27/223 ,  G01D5/24 ,  G01R27/2605 ,  H03K17/955

Abstract: Moisture detection and ingression monitoring systems and methods of manufacture are provided. The moisture detection structure includes chip edge sealing structures including at least one electrode forming a capacitor structured to detect moisture ingress within an integrated circuit. The at least one electrode and a second electrode of the capacitor is biased to ground and to a moisture detection circuit or vice versa, respectively.