公开(公告)号：US20030132453A1

公开(公告)日：2003-07-17

申请号：US10047975

申请日：2002-01-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David R. Greenberg ,  Basanth Jagannathan ,  Shwu-Jen Jeng ,  Joseph T. Kocis ,  Samuel C. Ramac ,  David M. Rockwell

IPC: H01L021/8222 ,  H01L021/331 ,  H01L031/0328

CPC classification number: H01L29/66242 ,  H01L29/7378

Abstract: A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.

公开(公告)号：US20040063293A1

公开(公告)日：2004-04-01

申请号：US10676171

申请日：2003-10-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David R. Greenberg ,  Basanth Jagannathan ,  Shwu-Jen Jeng ,  Joseph T. Kocis ,  Samuel C. Ramac ,  David M. Rockwell

IPC: H01L021/331 ,  H01L021/8222

CPC classification number: H01L29/66242 ,  H01L29/7378

Abstract: A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-situ P-doped emitter layer atop a patterned SiGe base structure. The in-situ P-doped emitter layer is a bilayer of in-situ P-doped a:Si and in-situ P-doped polysilicon. The SiGe HBT structure including the above mentioned bilayer emitter is also described herein.

公开(公告)号：US20030178635A1

公开(公告)日：2003-09-25

申请号：US10104972

申请日：2002-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard P. Volant ,  Robert A. Groves ,  Kevin S. Petrarca ,  David M. Rockwell ,  Kenneth J. Stein

IPC: H01L029/74

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00214 ,  H01H2001/0068 ,  H01H2059/0054

Abstract: A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.

Abstract translation: 描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。 扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。 制造扭转MEM开关的方法与CMOS制造工艺完全兼容。