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公开(公告)号：US10199516B2
公开(公告)日：2019-02-05
申请号：US15644768
申请日：2017-07-08
发明人： Brett Caroline Baker-O'Neal , Shu-Yun Chong , John Michael Cotte , Ronald Dean Goldblatt , Jeffrey Hedrick , Qiang Huang , Susan Huang , Laura Louise Kosbar , Rob Steeman , Roland Yudadibrata Utama
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/068
摘要： Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.
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2.发明申请MANUFACTURE AND STRUCTURE FOR PHOTOVOLTAICS INCLUDING METAL-RICH SILICIDE 审中-公开包括金属硅酸盐在内的光伏器件的制造和结构公开(公告)号：US20150325716A1
公开(公告)日：2015-11-12
申请号：US14662989
申请日：2015-03-19
发明人： Brett Caroline Baker-O'Neal , Shu-Yun Chong , John Michael Cotte , Ronald Dean Goldblatt , Jeffrey Hedrick , Qiang Huang , Susan Huang , Laura Louise Kosbar , Hwee Meng Lam , Christian Lavoie , Xiaoyan Shao , Rob Steeman
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022425 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Photovoltaic devices are formed with electroplated metal grids that are effectively adhered to the devices. Metal-rich silicides, such as nickel silicides, are formed on the devices by annealing. The metal used in the anneal exhibits low stress. Annealing may be conducted in ambient air followed by removal of oxide and excess metal from the metal-rich silicide. Laser patterning of the antireflective coating of the devices can be used to expose the emitter to form front grid contacts. Doping of the emitter in the patterned region can be increased during laser patterning. The ratio of the centerline to centerline pitch per laser width is controlled to ensure sufficient adhesion of subsequently plated busbars.
摘要翻译： 光伏器件由电镀金属网格形成，电镀金属网格被有效地粘附到器件上。 通过退火在器件上形成富金属硅化物，例如硅化镍。 退火中使用的金属显示低应力。 可以在环境空气中进行退火，然后从富含金属的硅化物中除去氧化物和过量的金属。 可以使用装置的抗反射涂层的激光图案来暴露发射器以形成前栅格触点。 激光图案化期间，可以增加图案化区域中的发射极的掺杂。 控制中心线与每个激光宽度的中心线间距的比例，以确保随后镀覆的母线的充分粘附。
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公开(公告)号：US09716192B2
公开(公告)日：2017-07-25
申请号：US14663115
申请日：2015-03-19
发明人： Brett Caroline Baker-O'Neal , Shu-Yun Chong , John Michael Cotte , Ronald Dean Goldblatt , Jeffrey Hedrick , Qiang Huang , Susan Huang , Laura Louise Kosbar , Rob Steeman , Roland Yudadibrata Utama
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18 , H01L31/068
CPC分类号： H01L31/02245 , H01L31/02167 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.
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公开(公告)号：US20140000693A1
公开(公告)日：2014-01-02
申请号：US13780887
申请日：2013-02-28
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Young-hee Kim , Susan Huang
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.
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公开(公告)号：US08946844B2
公开(公告)日：2015-02-03
申请号：US13780887
申请日：2013-02-28
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Young-hee Kim , Susan Huang
IPC分类号： H01L21/00 , H01L31/0216
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.
摘要翻译： 在包括pn结的半导体衬底的前表面上形成第一抗反射涂层（ARC）层和钛层的堆叠，并且随后被图案化，使得半导体表面物理暴露在金属接触区域 半导体衬底的前表面。 钛层的剩余部分通过氧化转化为二氧化钛层。 金属层被镀在金属接触区域上，随后将铜线镀在金属层上或衍生自金属层的金属半导体合金上。 第二ARC层沉积在二氧化钛层和铜线上，随后被图案化以提供与铜线的电接触。
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6.发明申请公开(公告)号：US20170309760A1
公开(公告)日：2017-10-26
申请号：US15644768
申请日：2017-07-08
发明人： Brett Caroline Baker-O'Neal , Shu-Yun Chong , John Michael Cotte , Ronald Dean Goldblatt , Jeffrey Hedrick , Qiang Huang , Susan Huang , Laura Louise Kosbar , Rob Steeman , Roland Yudadibrata Utama
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18 , H01L31/068
CPC分类号： H01L31/02245 , H01L31/02167 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.
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7.发明申请SURFACE PREPARATION AND UNIFORM PLATING ON THROUGH WAFER VIAS AND INTERCONNECTS FOR PHOTOVOLTAICS 有权通过WAVER VIAS和光伏互连连接的表面准备和均匀化公开(公告)号：US20150280022A1
公开(公告)日：2015-10-01
申请号：US14663115
申请日：2015-03-19
发明人： Brett Caroline Baker-O'Neal , Shu-Yun Chong , John Michael Cotte , Ronald Dean Goldblatt , Jeffrey Hedrick , Qiang Huang , Susan Huang , Laura Louise Kosbar , Rob Steeman , Roland Yudadibrata Utama
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/02245 , H01L31/02167 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.
摘要翻译： 光电器件通过通过硅衬底的激光钻孔通孔形成，并且在通孔侧壁的表面制备之后，在通孔侧壁上电镀连续的导电层，以将电池的发射极侧与电池背面电连接。 导电层可以形成在通孔内的基极发射体的部分上，以及衬底的背侧上。 或者，导电层可以形成在电池的通孔侧壁和背面上的钝化层上。
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