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    TANDEM NANOFILM PHOTOVOLTAIC CELLS JOINED BY WAFER BONDING
    2.
    发明申请
    TANDEM NANOFILM PHOTOVOLTAIC CELLS JOINED BY WAFER BONDING 有权
    TANDEM NANOFILM光伏电池通过波峰焊接合

    公开(公告)号：US20150072462A1

    公开(公告)日：2015-03-12

    申请号：US14547583

    申请日：2014-11-19

    Applicant: International Business Machines Corporation

    Inventor： Harold J. Hovel

    IPC: H01L31/0725 ,  H01L31/0352 ,  H01L31/18

    CPC classification number: H01L31/0725 ,  B82Y20/00 ,  H01L31/022433 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/035236 ,  H01L31/053 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/544

    Abstract: An energy conversion device comprises at least two thin film photovoltaic cells fabricated separately and joined by wafer bonding. The cells are arranged in a hierarchical stack of decreasing order of their energy bandgap from top to bottom. Each of the thin film cells has a thickness in the range from about 0.5 μm to about 10 μm. The photovoltaic cell stack is mounted upon a thick substrate composed of a material selected from silicon, glass, quartz, silica, alumina, ceramic, metal, graphite, and plastic. Each of the interfaces between the cells comprises a structure selected from a tunnel junction, a heterojunction, a transparent conducting oxide, and an alloying metal grid; and the top surface and/or the lower surface of the energy conversion device may contain light-trapping means.

    Abstract translation: 能量转换装置包括至少两个单独制造并通过晶片接合连接的薄膜光伏电池。 这些单元以从顶部到底部的能量带隙的递减顺序排列成分层堆叠。 每个薄膜电池的厚度在约0.5μm至约10μm的范围内。 光电池堆叠安装在由硅，玻璃，石英，二氧化硅，氧化铝，陶瓷，金属，石墨和塑料中选择的材料构成的厚基板上。 单元之间的每个接口包括选自隧道结，异质结，透明导电氧化物和合金金属栅格的结构; 并且能量转换装置的顶表面和/或下表面可以包含光捕获装置。

    Integration of a titania layer in an anti-reflective coating
    3.
    发明授权
    Integration of a titania layer in an anti-reflective coating 有权
    将二氧化钛层集成在抗反射涂层中

    公开(公告)号：US08946844B2

    公开(公告)日：2015-02-03

    申请号：US13780887

    申请日：2013-02-28

    Applicant: International Business Machines Corporation

    Inventor： Satyavolu S. Papa Rao ,  Kathryn C. Fisher ,  Harold J. Hovel ,  Qiang Huang ,  Young-hee Kim ,  Susan Huang

    IPC: H01L21/00 ,  H01L31/0216

    CPC classification number: H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

    Abstract translation: 在包括pn结的半导体衬底的前表面上形成第一抗反射涂层（ARC）层和钛层的堆叠，并且随后被图案化，使得半导体表面物理暴露在金属接触区域 半导体衬底的前表面。 钛层的剩余部分通过氧化转化为二氧化钛层。 金属层被镀在金属接触区域上，随后将铜线镀在金属层上或衍生自金属层的金属半导体合金上。 第二ARC层沉积在二氧化钛层和铜线上，随后被图案化以提供与铜线的电接触。

    INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE
    4.
    发明申请
    INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE 有权
    集成电路斩波器检测和响应

    公开(公告)号：US20140103286A1

    公开(公告)日：2014-04-17

    申请号：US13654078

    申请日：2012-10-17

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Jack O. Chu ,  Gregory M. Fritz ,  Harold J. Hovel ,  Young-Hee Kim ,  Dirk Pfeiffer ,  Kenneth P. Rodbell

    IPC: H01L23/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L23/576 ,  G06F21/86 ,  H01L27/24 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/16 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and at least one memory cell coupled to the at least one photovoltaic cell. When the at least one photovoltaic cell is exposed to radiation, the at least one photovoltaic cell generates a current that causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and a reactive material coupled to the at least one photovoltaic cell, wherein a current from the at least one photovoltaic cell triggers an exothermic reaction in the reactive material.

    Abstract translation: 本公开涉及具有篡改检测和响应装置的集成电路以及用于制造这种集成电路的方法。 具有篡改检测和响应装置的一个集成电路包括至少一个光伏电池和耦合到该至少一个光伏电池的至少一个存储单元。 当所述至少一个光伏电池暴露于辐射时，所述至少一个光伏电池产生导致所述至少一个存储器单元的存储器状态改变的电流。 具有篡改检测和响应装置的另一集成电路包括至少一个光伏电池和耦合到所述至少一个光伏电池的反应材料，其中来自所述至少一个光伏电池的电流触发所述反应性材料中的放热反应。

    COMPOSITIONALLY-GRADED BAND GAP HETEROJUNCTION SOLAR CELL
    8.
    发明申请
    COMPOSITIONALLY-GRADED BAND GAP HETEROJUNCTION SOLAR CELL 审中-公开
    组合梯形带隙异质细胞

    公开(公告)号：US20140109961A1

    公开(公告)日：2014-04-24

    申请号：US14146240

    申请日：2014-01-02

    Applicant: International Business Machines Corporation

    Inventor： Stephen W. Bedell ,  Harold J. Hovel ,  Daniel A. Inns ,  Jee H. Kim ,  Alexander Reznicek ,  Devendra K. Sadana

    IPC: H01L31/065 ,  H01L31/18 ,  H01L31/075

    CPC classification number: H01L31/065 ,  H01L31/03765 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/548

    Abstract: A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

    Abstract translation: 光伏器件包括组成调制的半导体结构，其包括p掺杂的第一半导体材料层，第一本征成分梯度半导体材料层，本征半导体材料层，第二本征组分梯度半导体层和n掺杂的第一半导体层 半导体材料层。 第一和第二本征成分梯度半导体材料层包括具有较大带隙宽度的第一半导体材料和具有较小带隙的第二半导体材料的合金，并且第二半导体材料的浓度朝向本征半导体 第一和第二组成梯度半导体材料层中的材料层。 光电器件提供与第一半导体材料相当的开路电压，以及与第二半导体材料相当的短路电流，从而提高光伏器件的效率。

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