-
1.发明授权公开(公告)号：US10269993B2
公开(公告)日：2019-04-23
申请号：US15069514
申请日：2016-03-14
IPC分类号： C25D7/12 , H01L31/0224 , H01L21/288 , H01L23/532 , H01L21/768 , C25D3/38 , C25D3/56 , C25D3/58 , C25D3/60 , C25D3/62 , C25D3/64 , C25D5/10 , C25D5/12 , C25D5/50 , C25D5/00 , H01L31/0216 , H01L31/068 , H01L31/18
摘要： A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.
-
公开(公告)号：US08946844B2
公开(公告)日：2015-02-03
申请号：US13780887
申请日：2013-02-28
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Young-hee Kim , Susan Huang
IPC分类号： H01L21/00 , H01L31/0216
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.
摘要翻译： 在包括pn结的半导体衬底的前表面上形成第一抗反射涂层（ARC）层和钛层的堆叠，并且随后被图案化，使得半导体表面物理暴露在金属接触区域 半导体衬底的前表面。 钛层的剩余部分通过氧化转化为二氧化钛层。 金属层被镀在金属接触区域上，随后将铜线镀在金属层上或衍生自金属层的金属半导体合金上。 第二ARC层沉积在二氧化钛层和铜线上，随后被图案化以提供与铜线的电接触。
-
公开(公告)号：US20170200838A1
公开(公告)日：2017-07-13
申请号：US15470508
申请日：2017-03-27
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/02
CPC分类号： H01L31/02168 , H01L31/0201 , H01L31/0216 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one lying on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate. A plurality of patterned antireflective coatings is located on the front side surface to provide a grid pattern including a busbar region and finger regions. The busbar region includes at least a real line interposed between at least two dummy lines. A material stack including at least one metal layer located on the semiconductor substrate in the busbar region and the finger regions.
-
公开(公告)号：US09608134B2
公开(公告)日：2017-03-28
申请号：US14609029
申请日：2015-01-29
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/02
CPC分类号： H01L31/02168 , H01L31/0201 , H01L31/0216 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.
-
公开(公告)号：US10170644B2
公开(公告)日：2019-01-01
申请号：US15470508
申请日：2017-03-27
IPC分类号： H01L31/0216 , H01L31/02 , H01L31/0224 , H01L31/18
摘要： A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one lying on top of the other, wherein an upper exposed surface of the semiconductor substrate represents a front side surface of the semiconductor substrate. A plurality of patterned antireflective coatings is located on the front side surface to provide a grid pattern including a busbar region and finger regions. The busbar region includes at least a real line interposed between at least two dummy lines. A material stack including at least one metal layer located on the semiconductor substrate in the busbar region and the finger regions.
-
6.发明申请USE OF METAL PHOSPHORUS IN METALLIZATION OF PHOTOVOLTAIC DEVICES AND METHOD OF FABRICATING SAME 审中-公开金属磷在金属化光伏器件中的应用及其制备方法公开(公告)号：US20160197208A1
公开(公告)日：2016-07-07
申请号：US15069514
申请日：2016-03-14
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/068 , H01L31/0216
CPC分类号： H01L31/022433 , C25D3/38 , C25D3/56 , C25D3/562 , C25D3/567 , C25D3/58 , C25D3/60 , C25D3/62 , C25D3/64 , C25D5/006 , C25D5/10 , C25D5/12 , C25D5/50 , C25D7/12 , H01L21/2885 , H01L21/76841 , H01L23/53238 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1864 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.
摘要翻译： 提供了包含含有金属磷层作为扩散阻挡层的含铜网状金属化结构的太阳能电池等太阳能电池。 含铜网格金属化结构从底部到顶部包括不包括位于半导体衬底的前侧表面上的栅格图案内的铜或铜合金的电镀金属磷层，以及电镀铜 - 含有层。 还提供了一种形成这种结构的方法。
-
7.发明申请PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC DEVICE FORMED THEREFROM 有权用于前金属半导体合金形成的方法用于形成前端接触金属化和其形成的光电器件公开(公告)号：US20150136228A1
公开(公告)日：2015-05-21
申请号：US14609029
申请日：2015-01-29
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/02 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/0201 , H01L31/0216 , H01L31/02167 , H01L31/022425 , H01L31/022433 , H01L31/18 , H01L31/1864 , Y02E10/50
摘要： A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.
摘要翻译： 提供一种形成光电器件的方法，其包括与p型半导体部分和n型半导体部分的p-n结，其中半导体部分之一的上部暴露表面表示半导体衬底的前侧表面。 在半导体表面的前侧表面上形成图案化的抗反射涂层，以提供包括母线区域和手指区域的网格图案。 具有模制每个图案化抗反射涂层的形状的掩模设置在每个图案化的抗反射涂层顶上。 金属层电沉积在母线区域和手指区域上。 在去除掩模之后，进行使来自金属层的金属原子与来自母线区域的半导体原子和形成金属半导体合金的指状区域反应的退火。
-
公开(公告)号：US20140000693A1
公开(公告)日：2014-01-02
申请号：US13780887
申请日：2013-02-28
发明人： Satyavolu S. Papa Rao , Kathryn C. Fisher , Harold J. Hovel , Qiang Huang , Young-hee Kim , Susan Huang
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.017 秒)
