公开(公告)号：US20190062917A1

公开(公告)日：2019-02-28

申请号：US16172179

申请日：2018-10-26

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Myung Mo SUNG ,  Kyu-Seok HAN ,  Hongbum KIM

IPC分类号： C23C16/455 ,  B01J3/00 ,  B01J3/02 ,  B01J3/03

摘要： A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

公开(公告)号：US20180233584A1

公开(公告)日：2018-08-16

申请号：US15947969

申请日：2018-04-09

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Myung Mo SUNG ,  Kyu-Seok HAN ,  Kwan Hyuck YOON

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L27/32

CPC分类号： H01L29/66742 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02557 ,  H01L21/0262 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/242 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： A method of fabricating a thin film transistor includes preparing a plastic substrate, forming a transparent active layer on the plastic substrate through an atomic layer deposition method by providing a first source including zinc on the plastic substrate and providing a second source including sulfur on the plastic substrate, providing a gate electrode overlapping with the transparent active layer, and providing a gate insulating layer between the gate electrode and the transparent active layer. A ratio of the providing of the first source to the providing of the second source ranges from 7:1 to 13:1.

公开(公告)号：US20180247816A1

公开(公告)日：2018-08-30

申请号：US15958538

申请日：2018-04-20

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Myung Mo SUNG ,  Kyu-Seok HAN

IPC分类号： H01L21/04 ,  C23C16/26 ,  C23C16/455 ,  H01L29/167 ,  H01L29/16

CPC分类号： H01L21/041 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/407 ,  C23C16/45525 ,  C23C28/00 ,  C23C28/04 ,  H01L21/306 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/49 ,  H01L29/78684

摘要： A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.