公开(公告)号：US08476473B2

公开(公告)日：2013-07-02

申请号：US12552085

申请日：2009-09-01

申请人： Ichiki Takemoto ,  Nobuo Ando ,  Mitsuhiro Hata

发明人： Ichiki Takemoto ,  Nobuo Ando ,  Mitsuhiro Hata

IPC分类号： C07C69/63 ,  C07C69/74

CPC分类号： C07C67/08 ,  C07C67/11 ,  C07C69/63 ,  C07C2601/02 ,  C07C2601/04 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/0392

摘要： A compounds represented by the Formula (I) or the Formula (I′). wherein Z1 and Z2 independently represent a hydrogen atom, a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group, provided that at least one of Z1 and Z2 represent a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group; rings Y1 and Y2 independently represents an optionally substituted C3 to C20 alicyclic hydrocarbon group; Q1 to Q4 and Q′1 to Q′4 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; and m and n independently represent an integer of 0 to 5.

摘要翻译： 由式（I）或式（I'）表示的化合物。 其中Z 1和Z 2独立地表示氢原子，C 1至C 12烷基或C 3至C 12环状饱和烃基，条件是Z 1和Z 2中的至少一个表示C 1至C 12烷基或C 3至C 12环状饱和烃 组; 环Y1和Y2独立地表示任选取代的C 3至C 20脂环族烃基; Q1至Q4和Q'1至Q'4独立地表示氟原子或C1至C6全氟烷基; m和n独立地表示0〜5的整数。

公开(公告)号：US20100055609A1

公开(公告)日：2010-03-04

申请号：US12552085

申请日：2009-09-01

申请人： Ichiki TAKEMOTO ,  Nobuo Ando ,  Mitsuhiro Hata

发明人： Ichiki TAKEMOTO ,  Nobuo Ando ,  Mitsuhiro Hata

IPC分类号： G03F7/004 ,  C07C69/63

CPC分类号： C07C67/08 ,  C07C67/11 ,  C07C69/63 ,  C07C2601/02 ,  C07C2601/04 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74 ,  G03F7/0045 ,  G03F7/0392

摘要： A compounds represented by the Formula (I) or the Formula (I′). wherein Z1 and Z2 independently represent a hydrogen atom, a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group, provided that at least one of Z1 and Z2 represent a C1 to C12 alkyl group or a C3 to C12 cyclic saturated hydrocarbon group; rings Y1 and Y2 independently represents an optionally substituted C3 to C20 alicyclic hydrocarbon group; Q1 to Q4 and Q′1 to Q′4 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; and m and n independently represent an integer of 0 to 5.

摘要翻译： 由式（I）或式（I'）表示的化合物。 其中Z 1和Z 2独立地表示氢原子，C 1至C 12烷基或C 3至C 12环状饱和烃基，条件是Z 1和Z 2中的至少一个表示C 1至C 12烷基或C 3至C 12环状饱和烃 组; 环Y1和Y2独立地表示任选取代的C 3至C 20脂环族烃基; Q1至Q4和Q'1至Q'4独立地表示氟原子或C1至C6全氟烷基; m和n独立地表示0〜5的整数。

公开(公告)号：US20100279226A1

公开(公告)日：2010-11-04

申请号：US12810793

申请日：2008-12-22

申请人： Mitsuhiro Hata ,  Yoshiyuki Takata ,  Satoshi Yamaguchi ,  Ichiki Takemoto ,  Takayuki Miyagawa ,  Yusuke Fuji

发明人： Mitsuhiro Hata ,  Yoshiyuki Takata ,  Satoshi Yamaguchi ,  Ichiki Takemoto ,  Takayuki Miyagawa ,  Yusuke Fuji

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： H01L21/0275 ,  G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

摘要： The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.

摘要翻译： 本发明的目的是提供一种制造抗蚀剂图案的方法，其中可以形成极细和高精度的抗蚀剂图案，该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的， 双重图案化方法 抗蚀剂处理方法包括： 通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含树脂（A），光酸产生剂（B）和交联剂（C），树脂（A） 具有酸不稳定基团，在碱性水溶液中不溶或难溶，但通过酸的作用使其溶于碱水溶液中; 预烘烤 曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。

公开(公告)号：US20110189618A1

公开(公告)日：2011-08-04

申请号：US13062180

申请日：2009-09-01

申请人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

发明人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

IPC分类号： G03F7/20

CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

摘要： A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

摘要翻译： 抗蚀剂处理方法包括以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现 通过酸，光酸产生剂（B），交联剂（C）和酸放大器（D）的作用将其溶于碱水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）硬烘烤第一抗蚀剂图案，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

公开(公告)号：US20090317744A1

公开(公告)日：2009-12-24

申请号：US12467683

申请日：2009-05-18

申请人： Yusuke FUJI ,  Mitsuhiro Hata

发明人： Yusuke FUJI ,  Mitsuhiro Hata

IPC分类号： G03F7/004 ,  C08G63/00

CPC分类号： C08F220/28 ,  C08F220/18 ,  Y10S430/114

摘要： A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n′ represents an integer of 0 to 12, Z2 represents a single bond etc., k′ represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc., and R23 represents a C1-C30 monovalent hydrocarbon group, and at least one structural unit selected from the group consisting of structural units represented by the formulae (IIIa), (IIIb), (IIIc), (IIId) and (IIIf) wherein R10 represents a hydrogen atom etc., R11 represents a methyl group, R12 is independently in each occurrence a carboxyl group etc., j represents an integer of 0 to 3, a represents an integer of 0 to 5, b represents an integer of 0 to 3, c represents an integer of 0 to (2j+2), Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.

摘要翻译： 一种包含由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1表示氢原子等，R2表示直链，支链或环状的C1-C8烷基，R3表示甲基，n表示 0〜14的整数，Z1表示单键等，k表示1〜4的整数，R4和R5各自独立地表示氢原子等，m表示1〜3的整数，表示的结构单元 式（II）表示：其中R6和R7各自独立地表示氢原子等，R8表示甲基，R9表示氢原子等，n'表示0〜12的整数，Z2表示单键等 k表示1〜4的整数，R 21和R 22各自独立地表示氢原子等，R 23表示碳原子数为1〜30的一价烃基，以及至少一个选自以下结构单元的结构单元： 通式（IIIa），（IIIb），（IIIc），（IIId）和（IIIf） ）其中R 10表示氢原子等，R 11表示甲基，R 12各自独立地表示羧基等，j表示0〜3的整数，a表示0〜5的整数，b表示整数 0〜3的整数，c表示0〜（2j + 2）的整数，Z 3表示单键等，k表示1〜4的整数。

公开(公告)号：US20080305638A1

公开(公告)日：2008-12-11

申请号：US12222433

申请日：2008-08-08

申请人： Sang-jung Choi ,  Mitsuhiro Hata ,  Man-hyoung Ryoo ,  Jung-hwan Hah

发明人： Sang-jung Choi ,  Mitsuhiro Hata ,  Man-hyoung Ryoo ,  Jung-hwan Hah

IPC分类号： H01L21/311

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/31144

摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.

摘要翻译： 用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。 聚合物可以具有被乙烯基醚官能团取代的芳环。 聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

公开(公告)号：US20070048672A1

公开(公告)日：2007-03-01

申请号：US11447932

申请日：2006-06-07

申请人： Sang-Jun Choi ,  Mitsuhiro Hata ,  Han-Ku Cho

发明人： Sang-Jun Choi ,  Mitsuhiro Hata ,  Han-Ku Cho

IPC分类号： G03C5/00

CPC分类号： G03F7/11 ,  G03F7/0758 ,  G03F7/2041

摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.

摘要翻译： 提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。 这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。 阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系， 基于烷烃的有机溶剂及其混合物。

公开(公告)号：US20060111550A1

公开(公告)日：2006-05-25

申请号：US11281775

申请日：2005-11-17

申请人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

发明人： Mitsuhiro Hata ,  Man-Hyoung Ryoo ,  Sang-Gyun Woo ,  Hyun-Woo Kim ,  Jin-Young Yoon ,  Jung-Hwan Hah

IPC分类号： C08F6/00

CPC分类号： G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  G03F7/2041 ,  Y10S430/146 ,  Y10S430/162

摘要： Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I: wherein R1 and R2 are independently selected from the group consisting of hydrogen, fluoro, methyl, and trifluoromethyl; X is a carboxylic acid group or a sulfonic acid group; Y is a carboxylic acid group or a sulfonic acid group, wherein the carboxylic acid group or sulfonic acid group is protected; Z is a monomer selected from the group consisting of a vinyl monomer, an alkyleneglycol, a maleic anhydride, an ethyleneimine, an oxazoline-containing monomer, acrylonitrile, an allylamide, a 3,4-dihydropyran, a 2,3-dihydrofuran, tetrafluoroethylene, or a combination thereof; and m, n, and q are integers wherein 0.03≦m/(m+n+q)≦0.97, 0.03≦n/(m+n+q)≦0.97, 0≦q/(m+n+q)≦0.5; and wherein the solvent includes deionized water.

摘要翻译： 提供能够用于浸没式光刻的顶涂层组合物，以及使用其形成光刻胶图案的方法。 顶部涂料组合物包括：聚合物，碱; 和溶剂，其中所述聚合物可以由式I表示：其中R 1和R 2独立地选自氢，氟，甲基和三氟甲基 ; X是羧酸基或磺酸基; Y是羧酸基或磺酸基，其中羧酸基或磺酸基被保护; Z是选自乙烯基单体，亚烷基二醇，马来酸酐，乙烯亚胺，含恶唑啉的单体，丙烯腈，烯丙基酰胺，3,4-二氢吡喃，2,3-二氢呋喃，四氟乙烯 ，或其组合; 并且m，n和q是其中0.03 <= m /（m + n + q）<=0.97,0.03≤n/（m + n + q）<= 0.97,0 <= q /（m + n + q）<= 0.5; 并且其中所述溶剂包括去离子水。

公开(公告)号：US20060063384A1

公开(公告)日：2006-03-23

申请号：US11232703

申请日：2005-09-22

申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

IPC分类号： G03F1/00 ,  H01L21/302

CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

公开(公告)号：US20050227151A1

公开(公告)日：2005-10-13

申请号：US10972302

申请日：2004-10-23

申请人： Mitsuhiro Hata ,  Jung-Hwan Hah ,  Hyun-Woo Kim ,  Sang-Gyun Woo

发明人： Mitsuhiro Hata ,  Jung-Hwan Hah ,  Hyun-Woo Kim ,  Sang-Gyun Woo

IPC分类号： G03F7/40 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/40

摘要： A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formd on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.

摘要翻译： 用于半导体器件制造的掩模图案包括形成在半导体衬底上的抗蚀剂图案和形成在抗蚀剂图案上的互聚物复合膜，其中互聚物复合膜包括由质子供体聚合物和质子受体之间的氢键形成的网络 聚合物。