摘要:
The invention provides a high purity carbonaceous material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity carbonaceous material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity carbonaceous material. The high purity carbonaceous material has oxygen content of 1×1018 atoms/cm3 or less as determined by SIMS. Its chlorine content is preferably 1×1016 atoms/cm3 or less as determined by SIMS, and its nitrogen content is preferably 5×1018 atoms/cm3 or less as determined by SIMS. Its phosphorus, sulfur and boron contents are preferably not higher than respective specified values. Such a high purity carbonaceous material is coated with ceramic layer.
摘要翻译:本发明提供了一种高纯度碳质材料,其中氧,氮和氯的含量容易地与碳原子和元素,磷,硫和硼的含量相容,加热时容易与碳原子结合,并且可用于生产 单晶,例如半导体,用作陶瓷层涂层的基材的高纯度碳质材料,以及陶瓷层涂覆的高纯度碳质材料。 高纯度碳质材料通过SIMS测定的氧含量为1×1018原子/ cm3或更低。 通过SIMS测定,其氯含量优选为1×10 16原子/ cm 3以下,并且通过SIMS测定,其氮含量优选为5×10 18原子/ cm 3以下。 其磷,硫和硼含量优选不高于相应的规定值。 这种高纯度碳质材料涂覆有陶瓷层。
摘要:
The invention provides a high purity carbonaceous material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity carbonaceous material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity carbonaceous material. The high purity carbonaceous material has oxygen content of 1×1018 atoms/cm3 or less as determined by SIMS. Its chlorine content is preferably 1×1016 atoms/cm3 or less as determined by SIMS, and its nitrogen content is preferably 5×1018 atoms/cm3 or less as determined by SIMS. Its phosphorus, sulfur and boron contents are preferably not higher than respective specified values. Such a high purity carbonaceous material is coated with ceramic layer.
摘要翻译:本发明提供了一种高纯度碳质材料,其中氧,氮和氯的含量容易地与碳原子和元素,磷,硫和硼的含量相容,加热时容易与碳原子结合,并且可用于生产 单晶,例如半导体,用作陶瓷层涂层的基材的高纯度碳质材料,以及陶瓷层涂覆的高纯度碳质材料。 通过SIMS测定,高纯度碳质材料的氧含量为1×10 18原子/ cm 3以下。 通过SIMS测定,其氯含量优选为1×10 16原子/ cm 3或更小,其通过SIMS测定的氮含量优选为5×10 18原子/ cm 3或更小。 其磷,硫和硼含量优选不高于相应的规定值。 这种高纯度碳质材料涂覆有陶瓷层。
摘要:
Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.
摘要:
A radio tag is disclosed that includes an inlet having a base member, an antenna pattern, and a circuit chip for performing radio communications, the antenna pattern and the circuit chip being provided in the base member and includes a spacer on which the inlet is provided. The spacer has a length in a longitudinal direction thereof twice or more as great as a length of the inlet in the longitudinal direction. The spacer has a flection part at which the spacer is foldable in such a manner as to form an attached surface to be attached to an attached subject of the radio tag.
摘要:
A radio tag is disclosed that includes an inlet having a base member, an antenna pattern, and a circuit chip for performing radio communications, the antenna pattern and the circuit chip being provided in the base member and includes a spacer on which the inlet is provided. The spacer has a length in a longitudinal direction thereof twice or more as great as a length of the inlet in the longitudinal direction. The spacer has a flection part at which the spacer is foldable in such a manner as to form an attached surface to be attached to an attached subject of the radio tag.
摘要:
A radio-frequency identification (RFID) tag includes: a plate-shaped sealing piece made of an elastic material. An inlet is enclosed within the sealing piece. The inlet includes an electronic component and an antenna connected to the electronic component. A pair of reinforcing pieces are located respectively on the front and back surfaces of the sealing piece so as to sandwich the electronic component. The reinforcing pieces are made of a first material harder than the elastic material. A joint piece configured to couple the reinforcing pieces to each other. The joint piece is made of a second material harder than the elastic material.
摘要:
According to an aspect of the invention, a wireless tag includes a base member that is flexible and on a surface of which a wiring pattern is formed, a wireless circuit chip that is mounted on the base member and connected to the wiring pattern; protective members that cover the base member and the wireless circuit chip and are lower in hardness than the base member, and a plurality of spherical projections that are arranged on the surfaces of the protective members, higher in hardness than the base member, and so arranged as to interfere with other adjacent spherical projections when at least the protective members are bent beyond a predetermined angle.
摘要:
Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon Raman spectroscopic analysis of the surface layer with an excitation wavelength of 532 nm, a peak other than a TO peak and an LO peak is observed as a peak derived from the polycrystalline silicon carbide with a 3C crystal polymorph.
摘要:
The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed material 11 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. A seed material 12 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
摘要:
An antenna includes a dielectric substrate, a ground electrode provided on a first surface of the dielectric substrate, a first antenna element and a second antenna elements provided to a second surface of the dielectric substrate, the first and second antenna elements having an identical resonance frequency and an identical Q value, a transmission line connecting the first and second antenna elements, and a feed part provided in the transmission line.