公开(公告)号：US08187377B2

公开(公告)日：2012-05-29

申请号：US10264393

申请日：2002-10-04

申请人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

发明人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

IPC分类号： C30B33/00

CPC分类号： H01L21/3065 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02658

摘要： The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

摘要翻译： 本发明提供用于处理半导体材料的表面。 该方法包括在高温下在氢气环境中将半导体材料的表面暴露于卤素蚀刻剂。 该方法控制半导体材料的表面粗糙度。 该方法还具有减少半导体材料中位错的意想不到的好处。

公开(公告)号：US07811901B1

公开(公告)日：2010-10-12

申请号：US12315369

申请日：2008-12-01

申请人： Philip James Ong ,  Harry Kirk ,  James Andrew Sullivan

发明人： Philip James Ong ,  Harry Kirk ,  James Andrew Sullivan

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method for fabricating a silicon on substrate structure having smooth edge regions. The method includes providing a silicon donor substrate having a surface region and a backside region. A substrate thickness is provided between the surface region and the backside region. The method includes co-implanting a plurality of first particles through the surface region into a vicinity of a cleave region and a plurality of second particles through the surface region into the vicinity of the cleave region. The cleave region defines a thickness of material to be removed between the cleave region and the surface region. The surface region of the silicon donor substrate is joint to a handle substrate to form a coupled substrate structure. The coupled substrate structure is then processed using a thermal treatment process and placed into a cleaving chamber. A cleaving action is initiated at an edge region of the coupled substrate structure to begin to detach the thickness of material at the edge region toward a center region of the thickness of material. The thickness of material is freed from a remaining portion of the coupled substrate structure. In a specific embodiment, the method provides an edge region having an edge profile that is substantially free from particles that can lead to breakage and the like.

摘要翻译： 一种用于制造具有平滑边缘区域的基板结构上的硅的方法。 该方法包括提供具有表面区域和背面区域的硅供体基板。 在表面区域和背面区域之间设置基板厚度。 该方法包括通过表面区域将多个第一颗粒共同注入到通过表面区域到解理区域附近的解理区域和多个第二颗粒附近。 劈裂区域限定了在劈裂区域和表面区域之间要除去的材料的厚度。 硅供体基板的表面区域与手柄基板接合以形成耦合的基板结构。 然后使用热处理工艺处理耦合的衬底结构，并将其放置在裂解室中。 在耦合的衬底结构的边缘区域处开始分裂作用，以开始将材料在边缘区域处的厚度朝向材料厚度的中心区域分离。 材料的厚度与耦合的衬底结构的剩余部分无关。 在具体实施方案中，该方法提供具有基本上不含可能导致断裂等的颗粒的边缘轮廓的边缘区域。

公开(公告)号：US20070087531A1

公开(公告)日：2007-04-19

申请号：US11581065

申请日：2006-10-13

申请人： Harry Kirk ,  Francois Henley ,  Philip Ong

发明人： Harry Kirk ,  Francois Henley ,  Philip Ong

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/67092 ,  H01L21/187 ,  H01L21/2007

摘要： Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous chuck having a rear area in pneumatic communication with a vacuum. Application of the vacuum causes the chuck and the associated substrate to slightly bend. Owing to this bending, physical contact between local portions on the front side of the flexed substrates may be initiated, while maintaining other portions on front side of the substrates substantially free from contact with each other. A bond wave is formed and maintained at a determined velocity to form a continuous interface joining the front sides of the substrates, without formation of voids therebetween. In one embodiment, the chucks may comprise porous polyethylene sealed with polyimide except for a portion of the front configured to be in contact with the substrate, and a portion of the backside configured to be in communication with a vacuum source.

摘要翻译： 根据本发明的实施例涉及以抑制它们之间的空隙形成的方式将基板结合在一起的方法和装置。 在具体实施例中，每个基板的背面粘附到具有与真空气动连通的后部区域的柔性多孔卡盘的前部区域。 真空的应用导致卡盘和相关联的基底稍微弯曲。 由于这种弯曲，可以启动弯曲基板的前侧上的局部部分之间的物理接触，同时保持基板的正面上的其他部分基本上不彼此接触。 键合波形成并保持在确定的速度以形成连接基片的前侧的连续界面，而不在其间形成空隙。 在一个实施例中，卡盘可以包括用聚酰亚胺密封的多孔聚乙烯，除了配置为与基板接触的前部的一部分，并且背面的一部分被配置为与真空源连通。

公开(公告)号：US20060160329A1

公开(公告)日：2006-07-20

申请号：US11378126

申请日：2006-03-17

申请人： Francois Henley ,  Philip Ong ,  Igor Malik ,  Harry Kirk

发明人： Francois Henley ,  Philip Ong ,  Igor Malik ,  Harry Kirk

IPC分类号： H01L21/30

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

摘要翻译： 一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。 该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。 该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。 优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。 该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。 该方法提供具有第二厚度的第二基底，其具有面和背面。 该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。 将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。 优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

公开(公告)号：US20060211219A1

公开(公告)日：2006-09-21

申请号：US11361855

申请日：2006-02-24

申请人： Francois Henley ,  Harry Kirk ,  James Sullivan

发明人： Francois Henley ,  Harry Kirk ,  James Sullivan

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  B81C1/00357 ,  B81C2201/019 ,  H01L21/6835 ,  H01L21/76254 ,  H01L2221/68359

摘要： A method and structures for manufacturing multi-layered substrates. The method includes providing a donor substrate, which has a first deflection characteristic. The donor substrate has a backside, a face, a cleave region, and a thickness of material defined between the cleave region and the face. The method includes bonding the face of the donor substrate to a face of the handle substrate. The method includes coupling a backing substrate to the backside of the donor substrate to form a multilayered structure. The backing substrate is adequate to cause the first deflection characteristic of the donor substrate to be reduced to a predetermined level. The predetermined level is a suitable deflection characteristic for the thickness of material to be transferred onto the face of a handle substrate. The method includes initiating a controlled cleaving process within a portion of the cleave region of the donor substrate to begin removal of the thickness of material from the donor substrate at a portion of the cleave region, while the backing substrate remains attached to the donor substrate to maintain at least the suitable deflection characteristic.

摘要翻译： 一种用于制造多层基板的方法和结构。 该方法包括提供具有第一偏转特性的施主衬底。 施主衬底具有背面，面，切割区域和限定在切割区域和面部之间的材料的厚度。 该方法包括将供体衬底的表面粘合到手柄衬底的表面上。 该方法包括将背衬衬底耦合到供体衬底的背面以形成多层结构。 背衬基板足以使供体基板的第一偏转特性减小到预定水平。 预定水平是要转移到手柄基板的表面上的材料的厚度的合适的偏转特性。 该方法包括在供体基底的切割区域的一部分内开始受控的切割过程，以开始在切割区域的一部分从供体基底去除材料的厚度，同时背衬基底保持附着于供体基底 保持至少适合的偏转特性。

公开(公告)号：US20060024917A1

公开(公告)日：2006-02-02

申请号：US11043477

申请日：2005-01-24

申请人： Francois Henley ,  Philip Ong ,  Igor Malik ,  Harry Kirk

发明人： Francois Henley ,  Philip Ong ,  Igor Malik ,  Harry Kirk

IPC分类号： H01L21/30

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

公开(公告)号：US20070232022A1

公开(公告)日：2007-10-04

申请号：US11394597

申请日：2006-03-31

申请人： Francois Henley ,  James Sullivan ,  Sien Kang ,  Philip Ong ,  Harry Kirk ,  David Jacy ,  Igor Malik

发明人： Francois Henley ,  James Sullivan ,  Sien Kang ,  Philip Ong ,  Harry Kirk ,  David Jacy ,  Igor Malik

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.

摘要翻译： 一种制造键合衬底结构的方法，例如硅上的硅。 在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。 在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料 晶体硅材料和第二硅衬底。 该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。 在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。 该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

公开(公告)号：US20060205180A1

公开(公告)日：2006-09-14

申请号：US11361834

申请日：2006-02-24

申请人： Francois Henley ,  Harry Kirk ,  James Sullivan

发明人： Francois Henley ,  Harry Kirk ,  James Sullivan

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  B81C1/00357 ,  B81C2201/019 ,  H01L21/6835 ,  H01L21/76254 ,  H01L2221/68359

摘要： A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.

摘要翻译： 包括一个或多个器件的多层衬底结构，例如光电集成电路。 该结构具有手柄基底，其特征在于预定的厚度和约1兆帕至约130千兆帕斯卡的杨氏模量。 该结构还具有耦合到处理衬底的基本上结晶材料的厚度。 优选地，基本上结晶的材料的厚度范围为约100微米至约5毫米。 该结构在基本上结晶的材料的厚度上具有切割的表面，并且表征切割膜的表面粗糙度小于200埃。 在材料的厚度上提供至少一个或多个光电子器件。

公开(公告)号：US20050247668A1

公开(公告)日：2005-11-10

申请号：US10841253

申请日：2004-05-06

申请人： Igor Malik ,  Francois Henley ,  Harry Kirk

发明人： Igor Malik ,  Francois Henley ,  Harry Kirk

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/30625 ,  H01L21/3065

摘要： A method for treating a surface region having a surface roughness, e.g., 0.3-30 nm rms. The method includes providing a substrate, which has a surface region, a thickness of material, and a backside surface. The surface region is characterized by a first predetermined surface roughness value. The thickness of material is defined between the surface region and the backside surface. The method includes maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber. The method includes maintaining the surface region within an annular region, which is substantially a similar height as the surface region. The annular region has a width surrounding the surface region. The method introduces hydrogen gas into the treatment chamber and introduces an etchant gas into the treatment chamber. The method exposes the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the etchant gas. The method reduces the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge of the substrate to a second edge of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge of the substrate to the second edge of the substrate.

摘要翻译： 一种用于处理表面粗糙度（例如0.3-30nm rms）的表面区域的方法。 该方法包括提供具有表面区域，材料厚度和背面的基板。 表面区域的特征在于第一预定表面粗糙度值。 材料的厚度被限定在表面区域和背面之间。 该方法包括将衬底从背面保持在基座上，以将衬底保持在处理室内的适当位置。 该方法包括将表面区域保持在与表面区域基本上类似的高度的环形区域内。 环形区域具有围绕表面区域的宽度。 该方法将氢气引入处理室，并将蚀刻剂气体引入处理室。 该方法将具有第一预定表面粗糙度值的表面区域和环形区域的宽度暴露于至少氢气和蚀刻剂气体。 该方法将预定表面粗糙度值从基板的第一边缘到基板的第二边缘沿着表面区域从预定表面粗糙度值减小到第二预定表面粗糙度值，从而基本上均匀地在第一边缘 的衬底到衬底的第二边缘。

公开(公告)号：US20070037323A1

公开(公告)日：2007-02-15

申请号：US11203547

申请日：2005-08-12

申请人： Francois Henley ,  Harry Kirk

发明人： Francois Henley ,  Harry Kirk

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/2007 ,  H01L21/76251

摘要： A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(l) and is defined normal to the surface region. A backing plate is coupled to the deformable surface region to cause the deformable surface region to be substantially non-deformable. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

摘要翻译： 一种形成半导体材料的应变硅层的方法。 该方法包括提供具有第一预定曲率半径的可变形表面区域，该曲率半径由R（1）限定并且与该表面区域垂直地限定。 背板联接到可变形表面区域，以使可变形表面区域基本上不可变形。 该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。 优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。 该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。 该方法提供具有第二厚度的第二基底，其具有面和背面。 该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。 将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。 优选地，使用诸如等离子体激活键合等的低温工艺进行接合。